Patents by Inventor Jung-Tsung Wang

Jung-Tsung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8110739
    Abstract: The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.
    Type: Grant
    Filed: August 29, 2007
    Date of Patent: February 7, 2012
    Assignees: Sino-American Silicon Products, Inc.
    Inventors: Miin-Jang Chen, Wen-Ching Hsu, Ya-Lan Ho, Jung-Tsung Wang
  • Patent number: 7816233
    Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.
    Type: Grant
    Filed: October 7, 2005
    Date of Patent: October 19, 2010
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Jer-Liang Yeh, Jing-Yi Huang, Wen-Ching Hsu, Ya-Lan Ho, Sung-Lin Hsu, Jung-Tsung Wang
  • Publication number: 20080072959
    Abstract: The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 27, 2008
    Inventors: Miin-Jang Chen, Wen-Ching Hsu, Ya-Lan Ho, Jung-Tsung Wang
  • Publication number: 20070020873
    Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.
    Type: Application
    Filed: October 7, 2005
    Publication date: January 25, 2007
    Inventors: Jer-Liang Yeh, Jing-Yi Huang, Wen-Ching Hsu, Ya-Lan Ho, Sung-Lin Hsu, Jung-Tsung Wang