Abstract: An embodiment multi-way coolant valve includes an outer housing including first to third outer inlets, first to third outer outlets, and a pump mount portion coupled to one of the outer outlets, an inner housing rotatably provided within the outer housing and including penetration holes corresponding to the outer inlets and outlets, a coolant line defined by a selective connection of the penetration holes such that the outer inlets and outlets are selectively connected, pads interposed between an interior circumference of the outer housing and an exterior circumference of the inner housing at locations of the outer inlets and outlets, respectively, and a driving device connected to a rotation center of the inner housing to selectively rotate the inner housing within the outer housing, wherein the inner housing is configured to rotate by a preset interval according to a selected vehicle mode.

Abstract: The present disclosure relates to a transmission of an agricultural work vehicle, the transmission comprising: a pre-shift part for performing speed shifting on driving transmitted from an engine of an agricultural work vehicle; a clutch part connected to the pre-shift part so as to selectively output driving transmitted from the pre-shift part; an adjusting part connected to the clutch part so as to perform speed shifting on driving transmitted from the clutch part; and a subsequent shift part connected to the adjusting part so as to perform speed shifting on driving transmitted from the adjusting part.

Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.

Abstract: Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler comprising a core and a shell, wherein the core contains secondary particles including aggregates of a plurality of primary particles, the shell has a raspberry shaped structure, an average particle diameter (D50) of the biodegradable polymer microparticle ranges from 20 to 200 ?m, a manufacturing method thereof, a freeze-dried body including the same, and filler injection including the same.

Abstract: Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler, a freeze-dried body including the same, a manufacturing method thereof, and filler injection including the freeze-dried body. The freeze-dried body includes hydrophilic surface-treated biodegradable polymer microparticle and a biocompatible carrier, wherein the hydrophilic surface-treated biodegradable polymer microparticle has an average particle diameter (D50) of 20 to 50 ?m and is polydioxanone which has a carboxyl group on the surface thereof. The hydrophilic surface-treated biodegradable polymer microparticle is a plasma surface-treated product or a base surface-treated product using discharge of the biodegradable polymer microparticle. The content of the biocompatible carrier is 1 to 5 parts by weight based on 100 parts by weight of the freeze-dried body.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler comprising a core and a shell, wherein the core contains secondary particles including aggregates of a plurality of primary particles, the shell has a raspberry shaped structure, an average particle diameter (D50) of the biodegradable polymer microparticle ranges from 20 to 200 ?m, a manufacturing method thereof, a freeze-dried body including the same, and filler injection including the same.

Abstract: Disclosed is a display device including a panel including an active area in which a plurality of subpixels is disposed, a through hole formed through the active area of the panel, a hole bezel zone disposed between the through hole and the active area so as to surround the through hole, and a plurality of data lines extending from a first active area of the active area to a second active area of the active area via the hole bezel zone, the plurality of data lines having a smaller wire pitch in the hole bezel zone than in the first active area and the second active area, wherein a first arrangement sequence of the plurality of data lines disposed in the first active area and a second arrangement sequence of the plurality of data lines disposed in the hole bezel zone are different from each other.

Abstract: Disclosed is a display device including a panel including an active area in which a plurality of subpixels is disposed, a through hole formed through the active area of the panel, a hole bezel zone disposed between the through hole and the active area so as to surround the through hole, and a plurality of data lines extending from a first active area of the active area to a second active area of the active area via the hole bezel zone, the plurality of data lines having a smaller wire pitch in the hole bezel zone than in the first active area and the second active area, wherein a first arrangement sequence of the plurality of data lines disposed in the first active area and a second arrangement sequence of the plurality of data lines disposed in the hole bezel zone are different from each other.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers including an active layer adapted to generate ultraviolet light by recombination of electrons and holes; an encapsulating member adapted to surround the semiconductor light emitting device chip; and an external substrate including a base, and conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The conductive layer is arranged inside of the encapsulating member and adapted to reflect the ultraviolet light, with the conductive layer having one face made of a substance with UV reflectivity of less than 90%. A flat area portion of the external substrate that is in contact with a lower face of the encapsulating member is smaller than a flat area portion of the external substrate that is not in contact with the lower face of the encapsulating member.

Abstract: Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.

Abstract: An ESD protection device includes a semiconductor substrate of p-type conductivity, an epitaxial layer of p-type conductivity, a buried layer of n-type conductivity, device isolation layers, a first well of n-type conductivity, an emitter formed by implanting p-type impurities into an upper portion of the first well, a second well of p-type conductivity, a collector formed by implanting p-type impurities into an upper portion of the second well, a first P-body region interposed between the second well and the collector, a third well of n-type conductivity, a base formed by implanting n-type impurities into an upper surface portion of the third well, and a first deep well of n-type conductivity, interposed between the third well and the buried layer.

Abstract: An ESD protection device includes a semiconductor substrate of p-type conductivity, an epitaxial layer of p-type conductivity, a buried layer of n-type conductivity, device isolation layers, a first well of n-type conductivity, an emitter formed by implanting p-type impurities into an upper portion of the first well, a second well of p-type conductivity, a collector formed by implanting p-type impurities into an upper portion of the second well, a first P-body region interposed between the second well and the collector, a third well of n-type conductivity, a base formed by implanting n-type impurities into an upper surface portion of the third well, and a first deep well of n-type conductivity, interposed between the third well and the buried layer.

Abstract: An audio signal output apparatus for a vehicle including: a serial data communication unit serially connecting input modules of an audio system within the vehicle, and serially transmitting and receiving an audio signal between the respective input modules; and an amplification module processing the audio signal inputted from the serial data communication unit, and outputting the processed audio signals through a speaker.