Abstract: The present invention relates to an educational solar cell module. According to the present invention, the electrodes of the solar cells can be easily and removably connected to each other in series or in parallel, and the variations in voltage and current according to the number of connected solar cells can be easily observed to thereby increase interest in solar energy. The educational solar cell module includes: a plurality of frames; a solar cell panel joined to the top surface of the frames; and a frame coupling member disposed on the frames to couple neighboring frames to each other so that the frames can be continuously joined and arrayed.

Abstract: The present invention relates to an educational solar cell module. According to the present invention, the electrodes of the solar cells can be easily and removably connected to each other in series or in parallel, and the variations in voltage and current according to the number of connected solar cells can be easily observed to thereby increase interest in solar energy. The educational solar cell module includes: a plurality of frames; a solar cell panel joined to the top surface of the frames; and a frame coupling member disposed on the frames to couple neighboring frames to each other so that the frames can be continuously joined and arrayed.

Abstract: A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

Abstract: A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

Abstract: A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

Abstract: A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

Abstract: A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.