Patents by Inventor Jung-Wun Hwang

Jung-Wun Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer capacitor and board having the same mounted thereon
    Patent number: 11581144
    Abstract: A multilayer capacitor includes a body having a plurality of dielectric layers and first and second internal electrodes alternately disposed with the dielectric layers interposed therebetween, and further including an active region in which the first and second internal electrodes overlap each other, and upper and lower covers disposed above and below the active region, respectively; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively, wherein the upper and lower covers include barium titanate (BT, BaTiO3) and Yttria-stabilized zirconia (YSZ).
    Type: Grant
    Filed: November 16, 2021
    Date of Patent: February 14, 2023
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Yo Han Seo, Min Hoe Kim, Jong Hyun Cho, Min Sung Song, Byung Kil Yun, Jung Wun Hwang
  • Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same
    Patent number: 11472821
    Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 18, 2022
    Assignee: HANSOL CHEMICAL. CO., LTD.
    Inventors: Jung-Wun Hwang, Ki-Yeung Mun, Jun-Won Lee, Kyu-Hyun Yeom, Jang-Hyeon Seok, Jung-Woo Park
  • MULTILAYER CAPACITOR AND BOARD HAVING THE SAME MOUNTED THEREON
    Publication number: 20220189693
    Abstract: A multilayer capacitor includes a body having a plurality of dielectric layers and first and second internal electrodes alternately disposed with the dielectric layers interposed therebetween, and further including an active region in which the first and second internal electrodes overlap each other, and upper and lower covers disposed above and below the active region, respectively; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively, wherein the upper and lower covers include barium titanate (BT, BaTiO3) and Yttria-stabilized zirconia (YSZ).
    Type: Application
    Filed: November 16, 2021
    Publication date: June 16, 2022
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Yo Han SEO, Min Hoe KIM, Jong Hyun CHO, Min Sung SONG, Byung Kil YUN, Jung Wun HWANG
  • PRECURSOR COMPOUNDS FOR ATOMIC LAYER DEPOSITION (ALD) AND CHEMICAL VAPOR DEPOSITION (CVD) AND ALD/CVD PROCESS USING THE SAME
    Publication number: 20210230193
    Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
    Type: Application
    Filed: October 25, 2018
    Publication date: July 29, 2021
    Inventors: Jung-Wun Hwang, Ki-Yeung Mun, Jun-Won Lee, Kyu-Hyun Yeom, Jang-Hyeon Seok, Jung-Woo Park