Abstract: The present specification pertains to a microorganism and/or Escherichia coli and a use thereof, wherein the microorganism and/or Escherichia coli has 3-hydroxypropionic acid or 3-hydroxypropionate (3-HP) production ability, with a foreign 3-HP production gene inserted into the genomic DNA thereof, and has a use of measuring the production ability of the inserted 3-HP production gene.

Abstract: A super junction semiconductor device includes a substrate, an active cell disposed on the substrate, an edge termination region surrounding the active cell, a peripheral region formed between the active cell and the edge termination region, a plurality of first conductivity type pillars and second conductivity type pillars alternately provided at an edge of the active cell and the peripheral region and the edge termination region, and a charge sharing region connecting the second conductivity type pillars in the peripheral region with the second conductivity type pillars in the edge termination region above the peripheral region and the edge termination region.

Abstract: A wafer annealing apparatus includes a gas supply unit located on one side of the wafer annealing apparatus and configured to supply high-temperature gases to transfer heat to wafers loaded inside the wafer annealing apparatus, a rotation driving unit comprising a rotation controller and configured to rotate a wafer support unit loaded with wafers, and a gas release unit located on the other side of the wafer annealing apparatus and configured to release the high-temperature gases fed to the wafer annealing apparatus. The rotation controller includes at least one processor configured to transmit a control signal to the rotation driving unit and control a rotation cycle and a rotation angle of the rotation driving unit.

Abstract: A semiconductor device includes a semiconductor substrate; an oxide film formed on the semiconductor substrate; a gate poly formed on a portion of the oxide film; a spacer formed to surround the gate poly; a dielectric film formed on the spacer; a first barrier metal formed on side surfaces of the oxide film, the gate poly, the spacer, and the dielectric film which are stacked, a surface of the semiconductor substrate, and a top surface of the dielectric film; a second barrier metal formed on the first barrier metal; a metal plug formed in a cavity formed by the second barrier metal; a metal layer formed on the second barrier metal and the metal plug; and a passivation layer formed on the metal layer. A thickness of the first barrier metal formed on the surface of the dielectric film is in a range of from 15 nm to 25 nm.

Abstract: The present application relates to an ink composition for a secondary battery separator, a separator for a secondary battery including the same, and a method for preparing the same.

Abstract: The present application relates to a separator and a battery comprising the same. A separator according to an exemplary embodiment of the present application includes: a porous substrate; and a first bonding layer pattern provided on at least one surface of the porous substrate, in which each pattern constituting the first bonding layer pattern is a pattern including a second bonding layer pattern having an aperture ratio of 5% or more and 40% or less.

Abstract: The present application relates to an ink composition for a secondary battery separator, a separator for a secondary battery including the same, and a method for preparing the same.

Abstract: The present application relates to a separator and a battery comprising the same. A separator according to an exemplary embodiment of the present application includes: a porous substrate; and a first bonding layer pattern provided on at least one surface of the porous substrate, in which each pattern constituting the first bonding layer pattern is a pattern including a second bonding layer pattern having an aperture ratio of 5% or more and 40% or less.

Abstract: The present invention relates to 4-alkenyl-2-azetidinone derivatives, a process for preparing 4-alkenyl-2-azetidinone derivatives and multicyclic compounds prepared using 4-alkenyl-2-azetidinone derivatives. More specifically, the present invention relates to a 4-alkenyl-2-azetidinone derivative having a novel structure represented by the following chemical formula 1, in which an alkenyl group such as 1,3-dien-2-yl or 1,2,4,5-hexatetraen-3-yl is substituted at the C-4 position of azetidinone; to a process for preparing the 4-alkenyl-2-azetidinone derivative by reacting 4-acetoxy-2-azetidinone with organic indium, which is prepared by reacting a propargyl halide derivative with indium; and to a novel multicyclic compound prepared using the compound represented by the following chemical formula 1 as an intermediate in the Diels-Alder reaction.

Abstract: The present invention relates to 4-alkenyl-2-azetidinone derivatives represented by the following chemical formula 1, a process for preparing the 4-alkenyl-2-azetidinone derivatives, and multicyclic compounds prepared using the 4-alkenyl-2-azetidinone derivatives wherein, Q, R1 and R2 are respectively the same as defined in the detailed description of the present invention.