Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.

Abstract: Disclosed in an embodiment are a light emitting device, and a light emitting device package and a light emitting module having the same. According to an embodiment, the light emitting device comprises: a first superlattice layer arranged on an AlN template layer, and a first semiconductor layer, a second superlattice layer, and a first conductive semiconductor layer; an active layer having a quantum well layer and a quantum wall layer arranged on the first conductive semiconductor layer; and an electron blocking layer arranged on the active layer and a second conductive semiconductor layer. A first and second layers of the first superlattice layer, the first semiconductor layer, and third and fourth layers of the second superlattice layer include AlGaN-based semiconductors, and an aluminum composition of the third layer is higher than an aluminum composition of the fourth layer and has the same composition range as that of an aluminum composition of the first semiconductor layer.

Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer disposed between the first conductive semiconductor layer and the active layer, or disposed inside the first conductive semiconductor layer, wherein the first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductive semiconductor layer.

Abstract: The present embodiments relate a light emitting device.

Abstract: Disclosed in an embodiment are a light emitting device, and a light emitting device package and a light emitting module having the same. According to an embodiment, the light emitting device comprises: a first superlattice layer arranged on an AlN template layer, and a first semiconductor layer, a second superlattice layer, and a first conductive semiconductor layer; an active layer having a quantum well layer and a quantum wall layer arranged on the first conductive semiconductor layer; and an electron blocking layer arranged on the active layer and a second conductive semiconductor layer. A first and second layers of the first superlattice layer, the first semiconductor layer, and third and fourth layers of the second superlattice layer include AlGaN-based semiconductors, and an aluminum composition of the third layer is higher than an aluminum composition of the fourth layer and has the same composition range as that of an aluminum composition of the first semiconductor layer.

Abstract: An embodiment relates to a light emitting device package and a manufacturing method of the light emitting device package. The light emitting device package according to an embodiment may include a body having a top opened cavity, a light emitting device mounted on an inner bottom surface of the cavity, and a molding part accommodated in the cavity to protect the light emitting device, and the molding part may include a CYTOP, and thus not only light efficiency can be enhanced but also the reliability of the product can be improved with high durability.

Abstract: The present embodiments relate a light emitting device.

Abstract: An embodiment relates to a light emitting device package and a manufacturing method of the light emitting device package. The light emitting device package according to an embodiment may include a body having a top opened cavity, a light emitting device mounted on an inner bottom surface of the cavity, and a molding part accommodated in the cavity to protect the light emitting device, and the molding part may include a CYTOP, and thus not only light efficiency can be enhanced but also the reliability of the product can be improved with high durability.