Patents by Inventor Jung-Yoon Ko

Jung-Yoon Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device and method of fabricating the same
    Patent number: 8431983
    Abstract: A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: April 30, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woong Lee, Jung-Yoon Ko, Sang-Kyoung Lee, Ho-Min Son, Won-Jun Jang, Jung-Geun Jee
  • NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20100171166
    Abstract: A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.
    Type: Application
    Filed: December 30, 2009
    Publication date: July 8, 2010
    Inventors: Woong Lee, Jung-Yoon Ko, Sang-Kyoung Lee, Ho-Min Son, Won-Jun Jang, Jung-geun Jee