Abstract: A substrate processing apparatus includes a process chamber including a processing space, a heater located inside the process chamber and configured to heat a lower portion of the processing space, and a first heat source located inside the process chamber and spaced apart from the heater and configured to heat an upper portion of the processing space, a plurality of first protrusions protruding in a vertical direction from an upper surface of the heater, and a second protrusion protruding in the vertical direction from an edge portion of the upper surface of the heater.

Abstract: A support unit includes a first plate on which a substrate is seated, a second plate located under the first plate, a third plate located under the second plate, a ground electrode disposed between the first plate and the second plate, and a heater electrode disposed between the second plate and the third plate. The first plate includes a first dielectric plate, a conductive plate disposed under the first dielectric plate, and a second dielectric plate disposed under the conductive plate.