Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

Abstract: The disclosure relates to a method of producing bankable and subculturable mature microglia, and according to a method according to an aspect, subculture and banking are possible, and freeze storage and thawing are also possible, and thus, it is possible to simply isolate and use only mature microglia whenever necessary. In addition, it is possible to dramatically reduce the number of subjects required for an experiment, and therefore, the method may contribute economically to all research or industrial fields related to microglia.

Abstract: The present invention relates to a method of bonding silicon parts using silicon powder and high-frequency heating device, the method comprising the steps of forming concave and convex coupling surfaces on the bonding surfaces of a lower ring and an upper ring; mounting the lower ring and the upper ring on a silicon part fusion bonding apparatus; injecting single crystal silicon powder into the concave and convex coupling surfaces on the bonding surfaces of the lower ring and the upper ring; and heating and fusing the bonding surfaces of the lower ring and the upper ring.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: The disclosure provides an electronic device including a substrate, a first semiconductor element, and a first protective structure. The first semiconductor element is disposed on the substrate and electrically connected to the substrate. The first semiconductor element has a first surface away from the substrate. The first protective structure covers at least a portion of the first surface.

Abstract: A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

Abstract: Provided are a novel peptide compound, a method of producing the same, and use of the peptide compound. Since the peptide compound has anticancer activity, the peptide compound may be used for the prevention or treatment of cancer.

Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.

Abstract: Provided are a novel peptide compound, a method of producing the same, and use of the peptide compound. Since the peptide compound has anticancer activity, the peptide compound may be used for the prevention or treatment of cancer.

Abstract: Provided are a novel peptide compound, a method of producing the same, and use of the peptide compound. Since the peptide compound has anticancer activity, the peptide compound may be used for the prevention or treatment of cancer.

Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.

Abstract: There is provided a thermosensitive biodegradable hydrogel including MPEG-PCL to which a cell-adhesive peptide binds, and MPEG-PCL. The thermosensitive biodegradable hydrogel has excellent cellular adhesiveness while maintaining thermosensitivity of polymers intact, and is biodegradable in vivo after a predetermined period of time.

Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may he washed effectively or refreshed.

Abstract: A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer between the substrate and the raised source/drain region. The protection layer is interposed between the substrate and the raised source/drain region. An atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region.

Abstract: An organic light emitting diode display panel is disclosed, which comprises: a substrate having a light emitting region and a non-light emitting region, wherein a first electrode layer is disposed on the light emitting region, a pixel defining layer is disposed on the non-light emitting region, and the pixel defining layer has a plurality of concave structures; an organic layer disposed on the first electrode layer and the pixel defining layer; and a second electrode layer disposed on the organic layer; wherein the organic layer is discontinuous at the concave structures.

Abstract: Provided are a novel peptide compound, a method of producing the same, and use of the peptide compound. Since the peptide compound has anticancer activity, the peptide compound may be used for the prevention or treatment of cancer.

Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.