Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

Abstract: A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.

Abstract: The present invention relates to a use of an agarobiose or agarooligosaccharides having anticariogenic activity. More specifically, a lower concentration of agarobiose or agarooligosaccharides than the concentration of xylitol suppresses the growth of Streptococcus mutans and suppresses acid production, and thus can be used for anti-cariogenic purposes.

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

Abstract: Compounds of Formulae I? and I are described, which are useful as stimulators of sGC, particularly NO-independent, heme-dependent stimulators. These compounds are also useful for treating, preventing or managing various disorders that are herein disclosed.

Abstract: A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

Abstract: Compounds of Formulae I? and I are described, which are useful as stimulators of sGC, particularly NO-independent, heme-dependent stimulators. These compounds are also useful for treating, preventing or managing various disorders that are herein disclosed.

Abstract: The present application provides a hetero-cyclic compound which may significantly improve the service life, efficiency, electrochemical stability, and thermal stability of an organic light emitting device, and an organic light emitting device in which the hetero-cyclic compound is contained in an organic compound layer.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: The present invention relates to a use of an agarobiose or agarooligosaccharides having anticariogenic activity. More specifically, a lower concentration of agarobiose or agarooligosaccharides than the concentration of xylitol suppresses the growth of Streptococcus mutans and suppresses acid production, and thus can be used for anti-cariogenic purposes.

Abstract: Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.

Abstract: An axial fan includes a fan frame, an impeller and a motor. The fan frame has a frame body, a base and plural connecting members. The base is disposed at the center of a side of the frame body. The connecting members connect the frame body to the base. The impeller is accommodated in the frame body and disposed on the base. The impeller has a rotating shaft, a hub and plural blades disposed around the hub. The motor is disposed on the base and connects with the rotating shaft to drive the impeller to rotate. When the impeller rotates forwardly, the airflow is induced to flow through the connecting members, blades, and one side of the frame body away from the base. When the impeller rotates reversely, the airflow is induced to flow through the side of the frame body, blades and connecting members.

Abstract: A method for treating cancer in a subject is provided; the method includes administrating bupropion to the subject, wherein the tumor cells of the cancer overexpress neuronal acetylcholine receptor subunit ?9 (CHRNA9). Another method for treating cancer in a subject is provided; the method includes administrating a pharmaceutical composition to the subject, wherein the pharmaceutical composition includes: a therapeutically effective amount of bupropion and a pharmaceutically acceptable excipient; wherein the tumor cells of the cancer overexpress CHRNA9. A method for inhibiting migration of tumor cells is also provided; the method includes administrating an effective amount of bupropion to the tumor cells; wherein the tumor cells overexpress CHRNA9.

Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.

Abstract: Compounds of Formulae I? and I are described, which are useful as stimulators of sGC, particularly NO-independent, heme-dependent stimulators. These compounds are also useful for treating, preventing or managing various disorders that are herein disclosed.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

Abstract: A polyester single layer film according to an embodiment of the present invention has low haze and low oligomer characteristics, has a more bluish color coordinate, and has a low inorganic metal content. Accordingly, the polyester single layer film may be used as a base film of a heat-resistant protective film and a light-scattering preventive film, as well as an ITO and non-ITO base film (for Ag nanowire, or the like) used in recent touch panels. In addition, since the transmittance at a wavelength of 550 nm is relatively high due to less impurity, the polyester single layer film may be used as a base film of a prism for a backlight unit (BLU) and a diffusion sheet.

Abstract: According to an exemplary embodiment, a microneedle probe device for measuring a sap flow rate of a plant includes: a substrate, of which at least a part is inserted into a plant, and a thickness and a width are microscales; a single metal wire provided on the substrate; a power source, which applies a current to the metal wire for a predetermined time and heats the metal wire; and a processor, which calculates a flow rate of sap through a movement of heat generated in the metal wire according to a flow of the sap within the plant.

Abstract: Compounds of Formulae I? and I are described, which are useful as stimulators of sGC, particularly NO-independent, heme-dependent stimulators. These compounds are also useful for treating, preventing or managing various disorders that are herein disclosed.