Abstract: The present application provides a method for manufacturing a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The method includes providing a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region; forming a first recess extending into the semiconductor substrate and disposed in the array region; and forming a word line disposed within the first recess. The formation of the word line includes disposing an insulating layer conformal to the first recess, and forming a conductive member surrounded by the insulating layer and having a second recess extending into the conductive member and toward the semiconductor substrate.

Abstract: The present application provides a method for manufacturing a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The method includes providing a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region; forming a first recess extending into the semiconductor substrate and disposed in the array region; and forming a word line disposed within the first recess. The formation of the word line includes disposing an insulating layer conformal to the first recess, and forming a conductive member surrounded by the insulating layer and having a second recess extending into the conductive member and toward the semiconductor substrate.

Abstract: The present application provides a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The memory device includes a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region, and including a first recess extending into the semiconductor substrate and disposed in the array region; an isolation structure surrounded by the semiconductor substrate and disposed in the peripheral region; and a word line disposed within the first recess, wherein the word line includes an insulating layer conformal to the first recess and a conductive member surrounded by the insulating layer, and the conductive member includes a second recess extending into the conductive member and toward the semiconductor substrate. A method of manufacturing the memory device is also disclosed.

Abstract: The present application provides a method for manufacturing a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The method includes providing a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region; forming a first recess extending into the semiconductor substrate and disposed in the array region; and forming a word line disposed within the first recess. The formation of the word line includes disposing an insulating layer conformal to the first recess, and forming a conductive member surrounded by the insulating layer and having a second recess extending into the conductive member and toward the semiconductor substrate.

Abstract: The present application provides a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The memory device includes a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region, and including a first recess extending into the semiconductor substrate and disposed in the array region; an isolation structure surrounded by the semiconductor substrate and disposed in the peripheral region; and a word line disposed within the first recess, wherein the word line includes an insulating layer conformal to the first recess and a conductive member surrounded by the insulating layer, and the conductive member includes a second recess extending into the conductive member and toward the semiconductor substrate. A method of manufacturing the memory device is also disclosed.

Abstract: A portable electronic apparatus and an interface display method thereof are disclosed. The method includes the following steps of: executing an application; capturing and analyzing an environmental sound around the portable electronic apparatus to obtain at least one sound character; determining a state of motion of the portable electronic apparatus; comparing the at least one sound character and the state of motion with a statistics data of the application to determine an interface display mode of the application; and locking the interface display mode as a predetermined interface display mode for displaying a display interface of the application when a compared result is obtained by the comparing step.