Abstract: An image forming apparatus includes a developing device, a plurality of feeding and delivering paths through which a printing medium is delivered to the developing device, a feeding roller unit which forms a developing and delivering path in which the plurality of feeding and delivering paths are joined and delivers the printing medium to the developing device, and a guide unit which guides the printing medium passing through the plurality of feeding and delivering paths to the feeding roller unit and is rotatably provided to expose the plurality of feeding and delivering paths to the outside. In the above configuration, the printing medium jam problems inside the image forming apparatus are easily cleared.

Abstract: An image forming apparatus includes a developing device, a plurality of feeding and delivering paths through which a printing medium is delivered to the developing device, a feeding roller unit which forms a developing and delivering path in which the plurality of feeding and delivering paths are joined and delivers the printing medium to the developing device, and a guide unit which guides the printing medium passing through the plurality of feeding and delivering paths to the feeding roller unit and is rotatably provided to expose the plurality of feeding and delivering paths to the outside. In the above configuration, the printing medium jam problems inside the image forming apparatus are easily cleared.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: According to an example embodiment, a conductive paste includes a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle. The metallic glass may include an alloy having a disordered atomic structure that includes at least two metals. An electronic device and/or solar cell may include an electrode formed using the conductive paste. An electrode formed using a conductive paste according to example embodiments may have lower contact resistance than an electrode formed using a conductive paste that includes glass frits instead of a metallic glass.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: An image forming apparatus includes a main body having an opening, and a consumable article separably installed in the main body through the opening. The consumable article includes a connector to perform a connection. The main body includes a connection terminal protruding toward the connector and a guide protrusion to prevent the connection terminal from coming into contact with a portion adjacent to the connector. The consumable article is provided with a guide groove into which the guide protrusion is inserted when the connection terminal and the connector are positioned to correspond to each other. When the connection terminal and the connector reach positions corresponding to each other, the guide protrusion is into the guide groove to perform the connection between the connection terminal and the connector, which prevents friction between the connection terminal and a portion adjacent to the connector.

Abstract: An automatic document feeder and a scanner having the same are provided. The automatic document feeder can include a transport unit configured to transport a document to a scanning unit, an apparatus main body configured to hold the transport unit, a cover configured to be rotatably disposed on the apparatus main body, and a sensing unit disposed on a document transportation path to sense whether the cover is open or closed, the position of the document, or both. The automatic document feeder and the scanner having the same are configured to allow a jammed document to be ejected without having the document be damaged.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.

Abstract: A doping paste includes an inorganic particle including a phosphorus-containing silicon compound and an organic vehicle, wherein a concentration of phosphorus at an interior portion of the inorganic particle is greater than a concentration of phosphorous at a surface of the inorganic particle.

Abstract: A conductive paste including a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle.

Abstract: An image forming apparatus includes a structure to lift or lower a paper loading tray without a separate drive source while preventing damage to constituent elements even under an abnormal situation in that excessive force is transmitted to the paper loading tray. The image forming apparatus includes a paper feeding cassette including a paper loading tray and a lifting member to lift or lower the paper loading tray, the paper feeding cassette being detachably coupled to the body, a power intermittence device to intermit power to be transmitted from a drive source provided in a body of the image forming apparatus to the lifting member, and a power transmission device to transmit the power transmitted through the power intermittence device to the lifting member by use of at least one worm gear. The image forming apparatus further includes a safety lever having one end to cooperate with a pickup roller assembly.

Abstract: In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

Abstract: A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.