Patents by Inventor Jungal CHOI

Jungal CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE COMPRISING STRING STRUCTURES FORMED ON ACTIVE REGION
    Publication number: 20140162423
    Abstract: A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.
    Type: Application
    Filed: February 17, 2014
    Publication date: June 12, 2014
    Inventors: Changhyun LEE, Jungal CHOI
  • Semiconductor device comprising string structures formed on active region
    Patent number: 8653578
    Abstract: A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: February 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Changhyun Lee, Jungal Choi
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100072559
    Abstract: A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.
    Type: Application
    Filed: September 9, 2009
    Publication date: March 25, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changhyun LEE, Jungal CHOI