Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: A fastening component supplying apparatus is disclosed. The disclosed fastening component supplying apparatus according to an exemplary embodiment of the present invention for supplying a plurality of bolts aligned by a bolt aligning device to a fastening portion of a fastening target part includes: a bolt picking unit rotatably installed to an arm front end of a handling robot and picking a plurality of bolts aligned in the bolt aligning device; and a bolt drop unit installed to an arm front end side of the handling robot and dropping the bolts picked by the bolt picking unit to the fastening portion.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: Disclosed herein is a sub-pixel circuit for a display device. The sub-pixel circuit has a driving TFT and at least one switching TFT. The at least one switching TFT is an oxide TFT. The sub-pixel circuit additionally has at least one storage capacitor wherein the storage capacitor has a capacitance between about 1 fF and about 55 fF.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure disposed on the channel region, the first source/drain region and the second source/drain region, and an interlayer dielectric (ILD) structure disposed on the gate structure. The ILD structure includes a first dielectric layer including a first set of sublayers. The first set of sublayers includes a first sublayer including a first dielectric material having a first hydrogen concentration and a second sublayer including the first dielectric material having a second hydrogen concentration lower than the first hydrogen concentration. The ILD structure further includes a second dielectric layer including a second set of sublayers. The second set of sublayers includes a third sublayer including a second dielectric material different from the first dielectric material.

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack is provided and includes a silicon oxide layer disposed on a workpiece, a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer, and a hydrogen-rich silicon nitride layer disposed on the nitrogen-rich silicon nitride layer. The hydrogen-rich silicon nitride layer has a greater hydrogen concentration than the nitrogen-rich silicon nitride layer.

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

Abstract: Disclosed is a fire detecting system. The fire detecting system includes: an optical flow detecting module for estimating a motion of a fire element from an input image, and determining a first candidate area in the input image; an image feature detecting module for recognizing an image feature of the fire element from the input image, and determining a second candidate area in the input image; a candidate area analyzing module for determining a suspicion area in which a generation of fire is suspected in the input image based on the first candidate area and the second candidate area; an ignition point estimating module for estimating a position of an ignition point in the suspicion area; a fire classifying module for calculating classifying scores obtained by predicting whether a fire is generated in the suspicion area; and a temporal analysis module for determining whether a fire is generated based on the position of the ignition point and the classifying scores.

Abstract: The present invention relates to a fiber-nanowire composite-based sheet having super-amphiphilic characteristics. In the present invention, fibers including metal nanoparticles or metal oxide nanoparticles embedded in the fibers or located on the surface of the fibers are synthesized, and a sheet based on a composite in which metal nanowires or metal oxide nanowires have been grown from the above fibers is provided. A sheet of the present invention has super-amphiphilic characteristics and can be used in various fields such as the antibacterial filter field, the antibacterial film field, the antiviral filter field, the antiviral film field, the antifouling coating field, the drug delivery vehicle field, or the water treatment filter field.

Abstract: The present disclosure relates to a power interface, and more particularly, to a power interface for electrically connecting an object to be tested and a test driving unit. The electric power interface in accordance with an exemplary embodiment includes: a support member; an elastic member fixed to the support member and configured to provide an elastic force in a vertical direction; a first connection terminal disposed on the elastic member; a second connection terminal electrically connected to the first connection terminal; and a flexible sheet has one side fixed to the elastic member and the other side fixed to the support member to restrict a deformation range of the elastic member.

Abstract: Embodiments herein include thin-film transistors (TFTs) including channel layer stacks with layers having differing mobilities. The TFTs disclosed herein transport higher total current through both the low mobility and the high mobility channel layers due to higher carrier density in high mobility channel layer and/or the high mobility channel layers, which increases the speed of response of the TFTs. The TFTs further include a gate structure disposed over the channel layer stack. The gate structure includes one or more gate electrodes, and thus the TFTs are top-gate (TG), double-gate (DG), or bottom-gate (BG) TFTs. The channel layer stack includes a plurality of layers with differing mobilities. The layers with differing mobilities confer various benefits to the TFT. The high mobility layer increases the speed of response of the TFT.

Abstract: Disclosed herein is a sub-pixel circuit for a display device. The sub-pixel circuit has a driving TFT and at least one switching TFT. The at least one switching TFT is an oxide TFT. The sub-pixel circuit additionally has at least one storage capacitor wherein the storage capacitor has a capacitance between about 1 fF and about 55 fF.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: Disclosed herein is a method for creating augmented reality content. The method for creating augmented reality content includes: extracting a target area, to which augmented reality content will be applied, from an object included in an image; providing a template for the creation of the augmented reality content that will be applied to the extracted target area; when a user inputs user content via the template, creating the augmented reality content by using the user content and the metadata of the target area; and performing rendering so that the created augmented reality content is applied to the target area of the image.

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

Abstract: Embodiments herein include thin-film transistors (TFTs) including channel layer stacks with layers having differing mobilities. The TFTs disclosed herein transport higher total current through both the low mobility and the high mobility channel layers due to higher carrier density in high mobility channel layer and/or the high mobility channel layers, which increases the speed of response of the TFTs. The TFTs further include a gate structure disposed over the channel layer stack. The gate structure includes one or more gate electrodes, and thus the TFTs are top-gate (TG), double-gate (DG), or bottom-gate (BG) TFTs. The channel layer stack includes a plurality of layers with differing mobilities. The layers with differing mobilities confer various benefits to the TFT. The high mobility layer increases the speed of response of the TFT.

Abstract: Disclosed herein is a sub-pixel circuit for a display device. The sub-pixel circuit has a driving TFT and at least one switching TFT. The at least one switching TFT is an oxide TFT. The sub-pixel circuit additionally has at least one storage capacitor wherein the storage capacitor has a capacitance between about 1 fF and about 55 fF.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.