Abstract: Provided is a semiconductor memory device with improved fuse sensing reliability during a slow power-up operation. The semiconductor memory device may include a memory cell array including a normal memory cell array and a spare memory cell array; an anti-fuse circuit supplied with a first voltage and configured to store fail address information associated with a defective memory cell in the normal memory cell array and configured to sense the fail address information in response to a clock signal applied during a power-up period; and a fuse read circuit including a clock generator supplied with a second voltage, the fuse read circuit configured to detect respective levels of the first and second voltages during the power-up period to generate the clock signal and to read the sensed fail address information from the anti-fuse circuit in response to the clock signal.

Abstract: The invention relates to an agent for the medicamentous treatment of acute and chronic pain, in particular of allodynia and hyperalgesia. Fields of application of the invention are medice and the pharmaceutical industry. A new pharmaceutical composition for the treatment of acute and/or chronic pain, in particular allodynia and hyperalgesiais provided, the pharmaceutical composition comprising calcium channel blockers which are suitable for blocking voltage-dependent calcium channels, in particular of the T-type, more preferably the CaV3.2 channel and/or of the L-type. Mibefradil and dihydropyridines can, for instance, be used as calcium channel blockers.