Patents by Inventor Jung Gu Lee

Jung Gu Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250354319
    Abstract: A drum rotating device of a laundry care apparatus includes a drum shaft coupled to a drum, and a motor including a stator and a rotor that rotates relative to the stator. A gear assembly transmits rotational force of the rotor to the drum shaft A carrier constituting the gear assembly and the drum shaft is coupled to each other in a first area. A sun gear, a ring gear (RG), and pinion gears constituting the gear assembly are engaged with each other and rotate in a second area spaced apart from the first area based on the axial direction of the drum shaft.
    Type: Application
    Filed: April 22, 2025
    Publication date: November 20, 2025
    Inventors: Young Chan AHN, Jeongyong SONG, Jung Gu LEE
  • Publication number: 20180171502
    Abstract: A method of electroplating on a workpiece having at least one sub-30 nm feature includes applying a first electrolyte chemistry to the workpiece, the chemistry including a metal cation solute species having a concentration in the range of about 50 mM to about 250 mM and a suppressor resulting in polarization greater than 0.75 V and reaching 0.75 V of polarization at a rate greater than 0.25 V/s, and applying an electric waveform, wherein the electric waveform includes a period of ramping up of current followed by a period of partial ramping down of current.
    Type: Application
    Filed: December 15, 2016
    Publication date: June 21, 2018
    Applicant: APPLIED Materials, Inc.
    Inventors: Serdar Aksu, Jung Gu Lee, Bart Sakry, Roey Shaviv
  • Patent number: 10000860
    Abstract: A method of electroplating on a workpiece having at least one sub-30 nm feature includes applying a first electrolyte chemistry to the workpiece, the chemistry including a metal cation solute species having a concentration in the range of about 50 mM to about 250 mM and a suppressor resulting in polarization greater than 0.75 V and reaching 0.75 V of polarization at a rate greater than 0.25 V/s, and applying an electric waveform, wherein the electric waveform includes a period of ramping up of current followed by a period of partial ramping down of current.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: June 19, 2018
    Assignee: APPLIED Materials, Inc.
    Inventors: Serdar Aksu, Jung Gu Lee, Bart Sakry, Roey Shaviv
  • Patent number: 9143358
    Abstract: The present invention relates to an electronic document communication system and to an electronic document communication method, which can construct an electronic document communication system for providing not only enterprise/institutions with reliability, but also individuals and small companies.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: September 22, 2015
    Assignee: NATIONAL IT INDUSTRY PROMOTION AGENCY
    Inventors: Dae Seob An, Jung Gu Lee, Seong Pil Kong, Yeong Cheol Lim
  • Publication number: 20130117400
    Abstract: The present invention relates to an electronic document distribution system and to an electronic document distribution method, which can construct an electronic document distribution system for providing not only enterprise/institutions with reliability, but also individuals and small companies.
    Type: Application
    Filed: July 8, 2011
    Publication date: May 9, 2013
    Applicant: NATIONAL IT INDUSTRY PROMOTION AGENCY
    Inventors: Dae Seob An, Jung Gu Lee, Seong Pil Kong, Yeong Cheol Lim
  • Publication number: 20130110919
    Abstract: The present invention relates to creating, distributing, and storing a distribution certificate in an electronic document distribution system which is based on a public electronic address, and particularly to a method for creating/issuing an electronic document distribution certificate, a method for verifying an electronic document distribution certificate, and a system for distributing an electronic document, which makes it possible to provide a transparent and efficient issuing service and to raise the distribution reliability of electronic documents due to the security of the compatibility of the certificate.
    Type: Application
    Filed: July 8, 2011
    Publication date: May 2, 2013
    Applicant: NATIONAL IT INDUSTRY PROMOTION AGENCY
    Inventors: Dae Seob An, Jung Gu Lee, Seong Pil Kong, Yeong Cheol Lim
  • Patent number: 8025983
    Abstract: A joining method between Fe-based steel and Ti/Ti-based alloys having a joint strength higher than those of base metals by using interlayers. The production of intermetallic compounds at a joint portion between Fe-based steel and Ti/Ti-based alloys can be prevented using interlayers, and strong interface diffusion bonding can be formed at interfaces between interlayers, thereby producing a high-strength joint. Accordingly, the present disclosure can be used to develop high-strength, high-functional advanced composite materials.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: September 27, 2011
    Inventors: Min Ku Lee, Jung Gu Lee, Jin-Ju Park, Chang-Kyu Rhee
  • Patent number: 7977205
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: July 12, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Publication number: 20100304549
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer.
    Type: Application
    Filed: June 14, 2010
    Publication date: December 2, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventors: Cha Deok DONG, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Patent number: 7736991
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches. Each second trench is narrower and deeper than the corresponding first trench. A first oxide layer is formed on sidewalls and a bottom surface of each of the second trenches. The first trench is filled with an insulating layer.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: June 15, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Publication number: 20100124669
    Abstract: A joining method between Fe-based steel and Ti/Ti-based alloys having a joint strength higher than those of base metals by using interlayers. The production of intermetallic compounds at a joint portion between Fe-based steel and Ti/Ti-based alloys can be prevented using interlayers, and strong interface diffusion bonding can be formed at interfaces between interlayers, thereby producing a high-strength joint. Accordingly, the present disclosure can be used to develop high-strength, high-functional advanced composite materials.
    Type: Application
    Filed: July 16, 2009
    Publication date: May 20, 2010
    Applicants: Korea Atomic Energy Research Institute, Korea Hydro and Nuclear Power Co., Ltd.
    Inventors: Min Ku Lee, Jung Gu Lee, Jin-Ju Park, Chang-Kyu Rhee
  • Publication number: 20080220605
    Abstract: The present invention discloses a method of manufacturing a flash memory device comprising the steps of forming a first insulating layer and a first conductive layer on a semiconductor substrate; etching the first conductive layer, the first insulating layer and the semiconductor substrate to form a trench; forming an isolation layer on a region on which the trench is formed; forming a second conductive layer to make the second conductive layer contact with the first conductive layer; and removing the second conductive layer formed on the isolation layer.
    Type: Application
    Filed: December 13, 2007
    Publication date: September 11, 2008
    Inventors: Jung Gu Lee, Whee Won Cho, Seong Hwan Myung, Suk Joong Kim
  • Publication number: 20080102579
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches. Each second trench is narrower and deeper than the corresponding first trench. A first oxide layer is formed on sidewalls and a bottom surface of each of the second trenches. The first trench is filled with an insulating layer.
    Type: Application
    Filed: December 28, 2006
    Publication date: May 1, 2008
    Applicant: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Patent number: 6594236
    Abstract: An alarm suppressing method for an optical transmission apparatus includes the steps of checking whether a detected alarm is a root alarm, suppressing a first propagation alarm generated by the root alarm when the detected alarm is a root alarm, determining the types of network elements, suppressing a second propagation alarm generated by the root alarm in accordance with the determined types of the network elements, and suppressing a third propagation alarm generated in accordance with the second propagation alarm. The method further includes the steps of recognizing the direction of a detected propagation alarm, retrieving an element next to the recognized direction, checking the kind of the generated propagation alarm, and suppressing a corresponding propagation alarm when a data base includes a root alarm by retrieving from the data base the information relevant to the root alarm in accordance with the kinds of the checked alarms.
    Type: Grant
    Filed: December 31, 1998
    Date of Patent: July 15, 2003
    Assignee: LG Information & Communications Ltd.
    Inventor: Jung Gu Lee