Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

Abstract: A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

Abstract: The present invention provides a silicon single crystal ingot cooling tube, including: an inner wall portion for forming a hollow into which a silicon single crystal ingot is inserted; an outer wall portion spaced apart from the inner wall portion and surrounding the inner wall portion from outside; a top wall portion and a bottom wall portion for sealing a space portion formed by the inner wall portion and the outer wall portion; at least one cooling water inlet tube for introducing cooling water into the space portion; at least one cooling water outlet tube for discharging cooling water flowing along the space portion; and a cooling water flowing portion for flowing cooling water introduced along the cooling water inlet tube to an upper region of the space portion from a lower region thereof and discharging cooling water to the cooling water outlet tube.

Abstract: A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.

Abstract: A lighting device comprises: a heat sink which comprises one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and comprises a substrate and a plurality of light sources disposed on the substrate, wherein the substrate has a first hole disposed at the center thereof and a second hole; a power controller which is electrically connected to the light emitting module through the second hole of the substrate and is disposed in the receiving recess of the heat sink, wherein the light emitting module comprises a first light emitting module comprising a first substrate and a first light source, and a second light emitting module comprising a second substrate and a second light source, wherein the first substrate and the second substrate are disposed adjacent to each other.

Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.

Abstract: A lighting device comprises: a heat sink which comprises one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and comprises a substrate and a plurality of light sources disposed on the substrate, wherein the substrate has a first hole disposed at the center thereof and a second hole; a power controller which is electrically connected to the light emitting module through the second hole of the substrate and is disposed in the receiving recess of the heat sink, wherein the light emitting module comprises a first light emitting module comprising a first substrate and a first light source, and a second light emitting module comprising a second substrate and a second light source, wherein the first substrate and the second substrate are disposed adjacent to each other.

Abstract: A lighting device may be provided that includes a heat sink which includes one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and includes a substrate and a plurality of light sources disposed on the substrate, wherein the substrate includes a hole and a plurality of via-holes; a power controller which includes an electrode pin electrically connected to the light emitting module through the via hole; and aninsulating inner case which receives the power controller therein and is disposed in the receiving recess of the heat sink, wherein the light sources include an lighting emitting diode.

Abstract: Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: Provided are a light emitting device package and a lighting system. The light emitting device package includes a light emitting device chip, at least one wire, and an encapsulating material. The light emitting device chip includes a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The wire is on the light emitting device chip. The encapsulating material is on the light emitting device chip out of the wire, and includes a phosphor. The wire is perpendicular to an upper surface of the light emitting device chip, at least up to a height of the encapsulating material.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure on the substrate, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; a first electrode on the light emitting structure; and a patterned phosphor layer on the light emitting structure, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the pattern of the phosphor layer exposes the first electrode.

Abstract: A lighting device may be provided that includes a heat sink which includes one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and includes a substrate and a plurality of light sources disposed on the substrate, wherein the substrate includes a hole and a plurality of via-holes; a power controller which includes an electrode pin electrically connected to the light emitting module through the via hole; and aninsulating inner case which receives the power controller therein and is disposed in the receiving recess of the heat sink, wherein the light sources include an lighting emitting diode.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure on the substrate, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers; a first electrode on the light emitting structure; and a patterned phosphor layer on the light emitting structure, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the pattern of the phosphor layer exposes the first electrode.