Abstract: The present disclosure relates to a polishing slurry composition and to a polishing slurry composition including nanoceria abrasive particles and a water-soluble compound including an intramolecular hydrophilic group, and further selectively including at least one from among an amphoteric compound including an intramolecular carboxyl group and amine group, a surface modifier including an organic acid, and a pH adjuster.

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

Abstract: A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

Abstract: According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 k? or more can be grown without improving impurities included in the raw material itself.

Abstract: The present invention provides a silicon single crystal ingot cooling tube, including: an inner wall portion for forming a hollow into which a silicon single crystal ingot is inserted; an outer wall portion spaced apart from the inner wall portion and surrounding the inner wall portion from outside; a top wall portion and a bottom wall portion for sealing a space portion formed by the inner wall portion and the outer wall portion; at least one cooling water inlet tube for introducing cooling water into the space portion; at least one cooling water outlet tube for discharging cooling water flowing along the space portion; and a cooling water flowing portion for flowing cooling water introduced along the cooling water inlet tube to an upper region of the space portion from a lower region thereof and discharging cooling water to the cooling water outlet tube.

Abstract: A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

Abstract: According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 k? or more can be grown without improving impurities included in the raw material itself.

Abstract: In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.

Abstract: In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.

Abstract: Methods of forming wiring structures and methods of manufacturing semiconductor devices include forming a lower structure on a substrate, forming an interlayer insulating film including an opening on the lower structure, forming a liner film on an inner surface of the opening, treating a surface of the liner film by an ion bombardment, and forming a first conductive film on the liner film. The first conductive film is formed to be at least partially filled in the opening through a reflow process. Related wiring structures and semiconductor devices are also discussed.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.

Abstract: A lighting device comprises: a heat sink which comprises one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and comprises a substrate and a plurality of light sources disposed on the substrate, wherein the substrate has a first hole disposed at the center thereof and a second hole; a power controller which is electrically connected to the light emitting module through the second hole of the substrate and is disposed in the receiving recess of the heat sink, wherein the light emitting module comprises a first light emitting module comprising a first substrate and a first light source, and a second light emitting module comprising a second substrate and a second light source, wherein the first substrate and the second substrate are disposed adjacent to each other.

Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.

Abstract: A portable audio device suitable for reproducing MPEG encoded data includes a plurality of inputs, a data storage, a display, an audio output, at least one processor, and a battery. The plurality of inputs includes a forward input, a play control input, and a random input. The data storage stores compressed digitized audio data. The at least one processor is responsive to selection of at least one of the plurality of inputs to convert selected compressed digitized audio data stored in the data storage for reproduction by the audio output and to provide information to the display.

Abstract: A lighting device comprises: a heat sink which comprises one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and comprises a substrate and a plurality of light sources disposed on the substrate, wherein the substrate has a first hole disposed at the center thereof and a second hole; a power controller which is electrically connected to the light emitting module through the second hole of the substrate and is disposed in the receiving recess of the heat sink, wherein the light emitting module comprises a first light emitting module comprising a first substrate and a first light source, and a second light emitting module comprising a second substrate and a second light source, wherein the first substrate and the second substrate are disposed adjacent to each other.

Abstract: A lighting device may be provided that includes a heat sink which includes one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and includes a substrate and a plurality of light sources disposed on the substrate, wherein the substrate includes a hole and a plurality of via-holes; a power controller which includes an electrode pin electrically connected to the light emitting module through the via hole; and aninsulating inner case which receives the power controller therein and is disposed in the receiving recess of the heat sink, wherein the light sources include an lighting emitting diode.

Abstract: Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less.

Abstract: A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.

Abstract: A portable audio device suitable for reproducing MPEG encoded data includes a plurality of inputs, a data storage, a display, an audio output, at least one processor, and a battery. The plurality of inputs includes a forward input, a play control input, and a play control input. The data storage stores compressed digitized audio data. The at least one processor is responsive to selection of at least one of the plurality of inputs to convert selected compressed digitized audio data stored in the data storage for reproduction by the audio output and to provide information to the display.