Abstract: A cover type touch switch structure includes: a seat housing embedded in a seat of a vehicle so as to be fastened to a seat frame; a switch housing disposed in the seat housing and including an outer surface which is coupled to the seat housing via a hook; a light-emitting unit which is disposed in the switch housing and stacked on the seat frame; and a knob unit which has a portion disposed in the switch housing and is stacked on the light-emitting unit.

Abstract: A plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configure to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, wherein each period of the pulse current includes a first section and a second section subsequent to the first section, and the pulse current generator is further configured to: provide, at the first section, the pulse current to the electromagnet in a first direction to generate the magnetic field, and provide, at the second section, the pulse current to the electromagnet in a second direction opposite to the first direction to reduce intensity of the magnetic field generated at the first section.

Abstract: A drug combination, an antibody-drug conjugate, and a polymer-drug conjugate are disclosed, for use in the combination therapy that uses as an exosome secretion inhibitor an endothelin receptor type A (ETA) antagonist, and an immune checkpoint inhibitor.

Abstract: The present invention relates to a method for dipping an adhesive material, and the method for dipping an adhesive material includes dipping an adhesive material onto a first dipping stamp, transferring the adhesive material, which is dipped onto the first dipping stamp, to a target substrate, and transferring a device to the target substrate, to which the adhesive material is transferred.

Abstract: The present invention relates to a oxygen-free direct conversion of methane reactor and a method for producing ethylene using the same. More specifically, the invention provides a oxygen-free direct conversion of methane reactor and a method for producing ethylene from methane, wherein the reactor is selectively heated to save energy, prevent overheating with high responsiveness, and minimize coke formation, thereby achieving high methane conversion rate and high ethylene yield at a high reaction rate. The method also allows for the production of ethylene and aromatic compounds.

Abstract: An object of the present invention is to provide a material for organic EL elements, the material being excellent in hole injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability. Another object of the present invention is to provide an organic EL element having high efficiency, a low driving voltage, and a long lifespan, by combining the aforementioned material with various materials for organic EL elements, the materials being excellent in hole/electron injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability, such that the properties of the individual materials can be effectively exhibited.

Abstract: The present disclosure provides a method for transfer and assembly of RGB micro-light-emitting diodes using vacuum suction force whereby the vacuum state of micrometer-sized adsorption holes to which micro-light-emitting diodes formed on a mother substrate or a temporary substrate are bonded is controlled selectively, so that only the micro-light-emitting diode devices desired to be detached from the mother substrate or the temporary substrate are detached from the mother substrate or the temporary substrate using vacuum suction force and then transferred to a target substrate.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: The present disclosure provides a method for transfer and assembly of RGB micro-light-emitting diodes using vacuum suction force whereby the vacuum state of micrometer-sized adsorption holes to which micro-light-emitting diodes formed on a mother substrate or a temporary substrate are bonded is controlled selectively, so that only the micro-light-emitting diode devices desired to be detached from the mother substrate or the temporary substrate are detached from the mother substrate or the temporary substrate using vacuum suction force and then transferred to a target substrate

Abstract: The present disclosure provides a method for transferring a semiconductor device using a micro-vacuum module, wherein the micro-vacuum module includes: a vacuum-forming substrate having a plurality of through-holes, which are connected to an external pump module and a vacuum control unit, formed; and a pattern-forming unit equipped with a single channel or a plurality of independent channels, which is coupled to the vacuum-forming substrate, wherein the plurality of channels are formed to be communicated respectively to a plurality of vacuum holes which have a smaller size than the size of a semiconductor device to be transferred, and the plurality of vacuum holes, having a diameter smaller than 100 ?m, are contacted to a micro semiconductor device having a width and a length of 100 ?m or smaller and the micro semiconductor device is transferred using vacuum adsorption.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: Disclosed herein is a display apparatus including a liquid crystal panel configured to display an image; a backlight unit including: a light source; and an optical member disposed at a path of light emitted from the light source toward the liquid crystal panel; a chassis disposed on the backlight unit and having a plurality of insertion holes along edges thereof; and a frame configured to support the liquid crystal panel and the optical member, the liquid crystal panel and the optical member provided between the frame and the chassis, wherein the frame is coupled to the plurality of insertion holes of the chassis by fitting.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode formed on the target substrate, an electronic device which is bonded to the bottom electrode, a top contact formed on the electronic device, a transferring element which is placed between the bottom electrode and the electronic device on the target substrate, and a top electrode connected to the electronic device, wherein the transferring element attached to the carrier substrate comes into contact with the electronic device, and is then transferred onto the target substrate.

Abstract: A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode formed on the target substrate, an electronic device which is bonded to the bottom electrode, a top contact formed on the electronic device, a transferring element which is placed between the bottom electrode and the electronic device on the target substrate, and a top electrode connected to the electronic device, wherein the transferring element attached to the carrier substrate comes into contact with the electronic device, and is then transferred onto the target substrate.

Abstract: A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Abstract: A material for high carburizing steel and a method for producing a gear using the material are provided. The material includes C of about 0.13 to 0.3 wt %, Si 0.7 to 1.3 wt %, Mn of about 0.3 to 1 wt %, P of about 0.02 wt % or less, S of about 0.03 wt % or less, Cr of about 2.2 to 3.0 wt %, Mo of about 0.2 to 0.7 wt %, Cu of about 0.3 wt % or less, Nb of about 0.03 to 0.06 wt %, V of about 0.1 to 0.3 wt %, Ti of about 0.001 to 0.003 wt %, a balance of Fe and other inevitable.