Patents by Inventor Jung-Hun Lim

Jung-Hun Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etchant composition
    Patent number: 12590249
    Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: March 31, 2026
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-ah Kim, Young-chan Kim, Hyo-san Lee, Hoon Han, Jin-uk Lee, Jung-hun Lim, Ik-hee Kim
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20250026962
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: September 27, 2024
    Publication date: January 23, 2025
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • Semiconductor element
    Patent number: 12163058
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: December 10, 2024
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Semiconductor element
    Patent number: 12146076
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 19, 2024
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 12012525
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: June 18, 2024
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11912902
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: February 27, 2024
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11512226
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 29, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11499073
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 15, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Composition for etching and manufacturing method of semiconductor device using the same
    Patent number: 11414569
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: August 16, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • ETCHANT COMPOSITION
    Publication number: 20220025261
    Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.
    Type: Application
    Filed: October 7, 2021
    Publication date: January 27, 2022
    Applicant: Soulbrain Co., Ltd.
    Inventors: Jung-ah KIM, Young-chan KIM, Hyo-san LEE, Hoon HAN, Jin-uk LEE, Jung-hun LIM, Ik-hee KIM
  • Etchant composition and method of fabricating semiconductor device
    Patent number: 11142694
    Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: October 12, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., Soulbrain Co., Ltd.
    Inventors: Jung-ah Kim, Young-chan Kim, Hyo-san Lee, Hoon Han, Jin-uk Lee, Jung-hun Lim, Ik-hee Kim
  • Etchant composition and method of fabricating integrated circuit device using the same
    Patent number: 10995269
    Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: May 4, 2021
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Jin-Woo Lee, Hoon Han, Keon-Young Kim, Jung-Hun Lim, Jin-Uk Lee, Jae-Wan Park
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210079266
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: March 18, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054238
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054237
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054235
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054236
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20210054234
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • ETCHANT COMPOSITION AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20200216758
    Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.
    Type: Application
    Filed: September 10, 2019
    Publication date: July 9, 2020
    Applicant: Soulbrain Co., Ltd.
    Inventors: Jung-ah KIM, Young-chan KIM, Hyo-san LEE, Hoon HAN, Jin-uk LEE, Jung-hun LIM, Ik-hee KIM
  • COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20190136090
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: December 21, 2018
    Publication date: May 9, 2019
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE