Abstract: A system is described herein for film deposition includes a drum; a motor configured to rotate the drum in a direction of rotation; a target including a target material; and a holder attached to the drum. The holder is configured to accommodate a substrate and to expose the substrate to free particles of the target material sputtered from the target, and the holder has an asymmetric shape.

Abstract: A fluid distributor comprises a first conduit extending along a first elongated axis and a second conduit circumscribing the first conduit. A first area comprises a cross-sectional flow area of the first conduit taken perpendicular to the first elongated axis. The first conduit comprises a first plurality of orifices comprising a first combined cross-sectional area. The second conduit comprises a second plurality of orifices comprising a second combined cross-sectional area. A first ratio of the first area to the first combined cross-sectional area can be about 2 or more. A second ratio of the first combined cross-sectional area to the second combined cross-sectional area can be about 2 or more. An angle between a direction of an orifice axis of a first orifice of the first plurality of orifices and a direction of an orifice axis of a first orifice of the second plurality of orifices can be from about 45° to 180°.

Abstract: A fluid distributor comprises a first conduit extending along a first elongated axis and a second conduit circumscribing the first conduit. A first area comprises a cross-sectional flow area of the first conduit taken perpendicular to the first elongated axis. The first conduit comprises a first plurality of orifices comprising a first combined cross-sectional area. The second conduit comprises a second plurality of orifices comprising a second combined cross-sectional area. A first ratio of the first area to the first combined cross-sectional area can be about 2 or more. A second ratio of the first combined cross-sectional area to the second combined cross-sectional area can be about 2 or more. An angle between a direction of an orifice axis of a first orifice of the first plurality of orifices and a direction of an orifice axis of a first orifice of the second plurality of orifices can be from about 45° to 180°.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.