Abstract: A positive electrode active material for a lithium secondary battery and a method for manufacturing the same. The positive electrode material, wherein excess lithium is present to be inappropriate for a site balance, has a composition of Li1+x+yM1?yO2 where x is an amount in which the excess lithium enters an tetrahedral site between a lithium layer and a transition metal layer, y is an amount in which the excess lithium enters an octahedral site of the transition metal layer, x and y are values that satisfy the charge balance, 0<x, y<1, and M is at least one selected from Al, Mg, Mn, Ni, Co, Cr, V, Fe, Nb, Mo, Ru, Zr, and Ir, and 3d, 4d, and 5d transition metals except for the listed metals, and a layered non-rocksalt-type structure.

Abstract: The present disclosure relates to a compound and an organic electroluminescent device comprising the same. By including the compound according to the present disclosure as an organic electroluminescent material, an organic electroluminescent device exhibiting low driving voltage and/or high power efficiency and/or long lifespan characteristics can be provided.

Abstract: The present invention relates to a positive-type photosensitive resin composition and to a cured film prepared therefrom The positive-type photosensitive resin composition comprises an acid-modified epoxy acrylate resin of a specific structure, so that it can provide a cured film that is excellent in flexible characteristics while having excellent film retention rate and sensitivity.

Abstract: The method includes a delithiation step of deintercalating a part of lithium of a Li-rich metal oxide represented by [Formula 1] below and having a layered structure, and a heat-treatment step of heat-treating the delithiated Li-rich metal oxide, thereby allowing dispersion to be achieved through diffusion of M? and/or M elements constituting the Li-rich metal oxide: a{Li2M?O3}·(1?a){LiMO2} or Li1+x(M?M)1?xO2??[Formula 1] (wherein 0<a<1.0, M? and M are one or more selected from 3d, 4d, 5d transition metals or non-transition metals including Al, Mg, Mn, Ni, Co, Cr, V and Fe, and satisfy electrical neutrality according to the type and oxidation number of M? and M and an amount of lithium in a layered structure of a material.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic copolymer having a dissolution rate to a developer in a specific range and a compound containing a phenolic hydroxyl group, so that it is possible to attain a high contrast and a high sensitivity pattern when a cured film is formed. Further, it is possible to further enhance the adhesiveness of a pattern when a half-tone, as well as a full-tone, is formed.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic resin and a siloxane copolymer containing a sulfonated diazoquinone group at the terminal thereof. Thus, the film retention rate and adhesiveness can be further enhanced, while the sensitivity is maintained.

Abstract: The present invention relates to a positive electrode active material which has a new composition, a non-rocksalt-type structure, and a new local structure, has significantly increased electrochemical activity, and thus can achieve high-capacity energy and significantly improved electrochemical performance, and a method of preparing the same.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a siloxane copolymer having specific structural units. Thus, a cured film formed from the composition may achieve a low edge angle of the pattern, thereby enhancing the resolution without deteriorating such physical properties as film retention rate and sensitivity.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic copolymer having a dissolution rate to a developer in a specific range and a compound containing a phenolic hydroxyl group, so that it is possible to attain a high contrast and a high sensitivity pattern when a cured film is formed. Further, it is possible to further enhance the adhesiveness of a pattern when a half-tone, as well as a full-tone, is formed.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic resin and a siloxane copolymer containing a sulfonated diazoquinone group at the terminal thereof. Thus, the film retention rate and adhesiveness can be further enhanced, while the sensitivity is maintained.

Abstract: Disclosed herein are a photosensitive resin composition and an organic insulating film prepared therefrom. By optimizing the weight average molecular weight of an alkali-soluble resin and the amount of each component in the photosensitive resin composition, a coated film obtained therefrom may have high planarity property and patterns with high resolution. Accordingly, the photosensitive resin composition may be used as a material for an organic insulating film simultaneously functioning as white pixels in a liquid crystal display.

Abstract: Disclosed herein are a photosensitive resin composition and an organic insulating film prepared therefrom. By optimizing the weight average molecular weight of a copolymer, and using a specific solvent in the photosensitive resin composition, a coated film obtained therefrom may have high planarity property and patterns with high resolution. Accordingly, the photosensitive resin composition may be used as a material for an organic insulating film simultaneously functioning as white pixels.

Abstract: A photosensitive resin composition includes (A) an acrylic-based binder resin including a repeating unit represented by Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description; (B) a cardo-based binder resin including a repeating unit represented by Chemical Formula 2-1 and a repeating unit represented by Chemical Formula 2-2, wherein in Chemical Formula 2-1 and 2-2, each substituent is the same as defined in the detailed description; (C) reactive unsaturated compound; (D) an initiator; (E) a colorant; and (F) a solvent. A photosensitive resin film using the same and a color filter is also provided.

Abstract: A photosensitive resin composition includes (A) an acrylic-based binder resin including a repeating unit represented by Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description; (B) a cardo-based binder resin including a repeating unit represented by Chemical Formula 2-1 and a repeating unit represented by Chemical Formula 2-2, wherein in Chemical Formula 2-1 and 2-2, each substituent is the same as defined in the detailed description; (C) reactive unsaturated compound; (D) an initiator; (E) a colorant; and (F) a solvent. A photosensitive resin film using the same and a color filter is also provided.

Abstract: Provided is a method for remediating arsenic-contaminated soil, including: a collection step of collecting arsenic-contaminated soil; a washing step of adding the collected soil to a washing solution, which is acidic in nature and provides reducing conditions to the soil, so as to remove arsenic from the soil and transfer the removed arsenic to the washing solution; a solid-liquid separation step of separating the soil and the washing solution from each other after the washing step; and a post-treatment step of removing arsenic from the washing solution, which was separated in the solid-liquid separation step, and employing the soil for remediation.

Abstract: Provided is a method of remediating cyanide-contaminated soil. The method is provided to remediate soil contaminated with cyanide and treat the cyanide, which includes collecting the soil contaminated with first cyanide in a solid state and second cyanide in a gaseous or dissolved state, dissociating cyanide by mixing the soil with an alkali washing solution, dissolving the first cyanide in a solid state in the washing solution, and transferring the second cyanide in a dissolved state dissociated from the soil to the washing solution, dissociating the soil from the washing solution, precipitating the first cyanide in a solid state by acidifying the washing solution containing the cyanide, and performing post-treatment on the first cyanide after the first cyanide precipitated in a solid state is dissociated from the washing solution.

Abstract: A semiconductor memory device comprises a substrate comprising a first cell array region, a first sense circuit region, a second sense circuit region, and a second cell array region that are arranged in order from a first side to a second side. First and second bit lines are coupled to a plurality of memory cells in the first cell array region, and first and second complementary bit lines are coupled to a plurality of memory cells in the second cell array region. A first column selector is formed in the first sense circuit region and is coupled to the first bit line and the first complementary bit line. A second column selector is formed in the second sense circuit region and is coupled to the second bit line and the second complementary bit line. The first column selector and the second column selector are formed directly adjacent to each other.

Abstract: Provided is a method for remediating arsenic-contaminated soil, including: a collection step of collecting arsenic-contaminated soil; a washing step of adding the collected soil to a washing solution, which is acidic in nature and provides reducing conditions to the soil, so as to remove arsenic from the soil and transfer the removed arsenic to the washing solution; a solid-liquid separation step of separating the soil and the washing solution from each other after the washing step; and a post-treatment step of removing arsenic from the washing solution, which was separated in the solid-liquid separation step, and employing the soil for remediation.

Abstract: A semiconductor memory device includes a memory block having first and second word lines extending in a first direction and bit lines extending in a perpendicular second direction; a first driver region at a side of the memory block in the first direction driving the first word lines; a second driver region at another side of the memory block in the first direction driving the second word lines; a sensing region at a side of the memory block in the second direction controlling the bit lines responsive to signals from drive lines; a first conjunction region at an intersection of the first driver and sensing regions including a first driver driving the drive lines responsive to signals from control lines; and a second conjunction region at an intersection of the second driver and sensing regions, including a second driver driving the drive lines responsive to signals from the control lines.

Abstract: Provided is a semiconductor memory device having peripheral circuit capacitors. In the semiconductor memory device, a first node is electrically connected to a plurality of lower electrodes of a plurality of capacitors in a peripheral circuit region to connect at least a portion of the capacitors in parallel. A second node is electrically connected to a plurality of upper electrodes of the capacitors in the peripheral circuit region to connect at least a portion of the capacitors in parallel. The first node is formed at substantially the same level as a bit line in a cell array region and is formed of the same material used to form the bit line.