Abstract: A method is provided including: displaying a first content; detecting, by an electronic device, an output condition; and in response to the output condition, outputting, by the electronic device, a second content that that is associated with the first content. Furthermore, an electronic device is provided including: a memory configured to store content; and a processor configured to: display a first content; detect, by an electronic device, an output condition; and in response to the output condition, output a second content that that is associated with the first content.

Abstract: A semiconductor system includes a controller configured to apply a command address, a first chip selection signal, and a second chip selection signal, and a semiconductor device including a first rank and a second rank configured to calibrate each termination resistance, based on the command address, the first chip selection signal, and the second chip selection signal.

Abstract: This work relates to a geometric-phase metasurface combined with a fluidic circuit for tuning the properties of the metasurface (especially its diffraction efficiency). We consider two aspects of particular interest: A) Dynamic on-demand diffractive optics (operating in transmission), both as optical elements for altering incident light, and as sensors of the refractive index of a fluid; and B) Transparent, reflective displays. Here the display itself is transmissive, but operates in reflection. One application of dynamic on-demand diffractive optics is to replace the lens array often needed in light field displays.

Abstract: We provide plasmonic structures having optical responses that are sensitive to mechanical input(s). Such plasmon resonances can be made sufficiently sensitive to deformation to enable this approach. These structures can be used in active devices, such as an optical metasurface controlled by one or more acoustic inputs, or in passive devices such as an acoustic sensor or mechanical force sensor.

Abstract: Provided is a meta-optics including a waveguide layer including a first surface and a second surface opposite to the first surface; and a plurality of meta units provided on the waveguide layer, each meta unit of the plurality of meta units including a grating configured to diffract incident light of a predetermined wavelength, a first electrode provided under the grating, a dielectric layer provided over the grating, and a second electrode provided on the dielectric layer, wherein a dielectric constant of the grating and a reflectance of the grating with respect to incident light change based on a voltage applied to the first electrode and the second electrode.

Abstract: Real-space optical signal processing is provided by optical angular filters that act on amplitude and/or phase of zero order light passing through a resonant diffractive optical device. One application is to phase contrast microscopy, where the diffractive optical device can be configured to have an amplitude and phase response suitable for phase contrast microscopy. For example, 60% or more intensity attenuation of the zero order light, combined with a phase shift of the zero order light by +/?90 degrees.

Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: Waveguide enhanced resonant diffraction is provided in grating structures having negligible non-resonant diffraction by the grating. This is done by making the grating thickness much less than any relevant wavelength, and by having the grating in proximity to a waveguide for diffractive coupling to and from a mode of the waveguide. Material absorption in the grating material can be used to suppress undesired diffraction orders. The resulting structures can provide rainbow-free diffractive optical sampling.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Waveguide enhanced resonant diffraction is provided in grating structures having negligible non-resonant diffraction by the grating. This is done by making the grating thickness much less than any relevant wavelength, and by having the grating in proximity to a waveguide for diffractive coupling to and from a mode of the waveguide. Material absorption in the grating material can be used to suppress undesired diffraction orders. The resulting structures can provide rainbow-free diffractive optical sampling.

Abstract: A method and electronic device are disclosed herein. The electronic device includes a display, a communication unit, a processor and a memory storing instructions. The process executes the instructions to implement the method, including establishing wireless communication with one or more IoT devices, displaying a user interface for managing IoT devices, receiving a user input selecting a group of IoT devices, transmitting first information including user account data to an external server, transmitting second information to another device, the first information also indicating a selected group of IoT devices, and the second information causing the other device to communicatively connect with the first external server.

Abstract: Provided is a composition for etching a silicon nitride film, which contains inorganic acid, silicon compound, and water, and does not contain fluorine, and which can selectively remove the silicon nitride film, while minimizing damages to the underlying metal film and the etching rate of the silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: A method and electronic device are disclosed herein. The electronic device includes a display, a communication unit, a processor and a memory storing instructions. The process executes the instructions to implement the method, including establishing wireless communication with one or more IoT devices, displaying a user interface for managing IoT devices, receiving a user input selecting a group of IoT devices, transmitting first information including user account data to an external server, transmitting second information to another device, the first information also indicating a selected group of IoT devices, and the second information causing the other device to communicatively connect with the first external server.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A method and electronic device are disclosed herein. The electronic device includes a display, a communication unit, a processor and a memory storing instructions. The process executes the instructions to implement the method, including establishing wireless communication with one or more IoT devices, displaying a user interface for managing IoT devices, receiving a user input selecting a group of IoT devices, transmitting first information including user account data to an external server, transmitting second information to another device, the first information also indicating a selected group of IoT devices, and the second information causing the other device to communicatively connect with the first external server.