Abstract: Provided is a substrate processing apparatus including a chamber, a support member inside the chamber, a center bias electrode at an inner center region of the support member, an edge bias electrode at an inner edge region of the support member, a center power supply unit connected to the center bias electrode and configured to output a center start voltage at a start point of a control period and a center end voltage at an end point of the control period, and an edge power supply unit connected to the edge bias electrode and configured to output an edge start voltage at the start point and an edge end voltage at the end point, wherein a value obtained by subtracting the edge start voltage from the edge end voltage is greater than a value obtained by subtracting the center start voltage from the center end voltage.

Abstract: A dry etching apparatus includes a process chamber; a support provided in the process chamber and configured to support a substrate; a gas supply configured to supply a process gas including a hydrogen gas (H2) and a fluorocarbon gas (CxFy) into the process chamber; a plasma source configured to generate plasma using the process gas in the process chamber, wherein the support includes: an electrostatic chuck on which the substrate is disposed; an edge ring provided along a circumference of the electrostatic chuck and supporting an edge region of the substrate; an adhesive gel pad provided between the electrostatic chuck and the edge ring; and a coating layer formed only on a surface of the edge ring, which is exposed to the plasma.

Abstract: A method of manufacturing an integrated circuit (IC) device including forming an etching target structure on a substrate, forming an etching mask pattern having an opening on the etching target structure, etching a portion of the etching target structure through the opening to form a first hole in the etching target structure, forming a conductive polymer layer to cover the etching target structure inside the first hole, and etching another portion of the etching target structure through the first hole, in a state in which the etching target structure is covered by the conductive polymer layer inside the first hole, to form a second hole in the etching target structure and extending from the first hole toward the substrate may be provided.

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter.

Abstract: A ring assembly and a chuck assembly therewith are provided. The ring assembly may include an edge ring that is provided to enclose a chuck body supporting a substrate. The edge ring may include a first top surface, a second top surface positioned outside the first top surface and above the first top surface, a first inner side surface connecting the first top surface to the second top surface, and at least one first flow hole extending outward from one of the first top surface and the first inner side surface, thereby penetrating the edge ring.

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter.

Abstract: A substrate processing system includes a wall liner, an electrostatic chuck in the wall liner to hold a substrate, and a ring member including a focus ring and a side ring. The focus ring is on an edge region of the electrostatic chuck and the side ring encloses an outer side surface of the focus ring and a side surface of the electrostatic chuck. The side ring includes air holes extending from a bottom surface of the ring member towards a top portion of the ring member and extending from the top portion of the ring member towards an outer side surface of the ring member.

Abstract: A ring assembly and a chuck assembly therewith are provided. The ring assembly may include an edge ring that is provided to enclose a chuck body supporting a substrate. The edge ring may include a first top surface, a second top surface positioned outside the first top surface and above the first top surface, a first inner side surface connecting the first top surface to the second top surface, and at least one first flow hole extending outward from one of the first top surface and the first inner side surface, thereby penetrating the edge ring.

Abstract: A substrate processing system includes a wall liner, an electrostatic chuck in the wall liner to hold a substrate, and a ring member including a focus ring and a side ring. The focus ring is on an edge region of the electrostatic chuck and the side ring encloses an outer side surface of the focus ring and a side surface of the electrostatic chuck. The side ring includes air holes extending from a bottom surface of the ring member towards a top portion of the ring member and extending from the top portion of the ring member towards an outer side surface of the ring member.