Patents by Inventor Jung-Hyuck Choi
Jung-Hyuck Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11335682Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: GrantFiled: July 3, 2020Date of Patent: May 17, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
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Patent number: 11217780Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.Type: GrantFiled: June 20, 2017Date of Patent: January 4, 2022Assignee: Samsung SDI Co., Ltd.Inventors: Jung Hyuck Choi, Won Shik Park
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Patent number: 11189820Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.Type: GrantFiled: June 20, 2017Date of Patent: November 30, 2021Assignee: Samsung SDI Co., Ltd.Inventors: Jung Hyuck Choi, Won Shik Park
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Publication number: 20200335500Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: ApplicationFiled: July 3, 2020Publication date: October 22, 2020Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
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Patent number: 10777553Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: GrantFiled: March 25, 2019Date of Patent: September 15, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
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Publication number: 20190267608Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.Type: ApplicationFiled: June 20, 2017Publication date: August 29, 2019Inventors: Jung Hyuck CHOI, Won Shik PARK
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Publication number: 20190221563Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: ApplicationFiled: March 25, 2019Publication date: July 18, 2019Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
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Patent number: 10319720Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: GrantFiled: December 20, 2017Date of Patent: June 11, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
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Publication number: 20190013314Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.Type: ApplicationFiled: December 20, 2017Publication date: January 10, 2019Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
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Patent number: 7772775Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.Type: GrantFiled: February 4, 2008Date of Patent: August 10, 2010Assignee: Samsung SDI Co., Ltd.Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
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Patent number: 7498745Abstract: A manufacturing method of a plasma display panel is to form a transparent electrode pattern on a boundary portion between a display region and a non-display region when the transparent electrode pattern is formed by the laser ablation method.Type: GrantFiled: December 9, 2005Date of Patent: March 3, 2009Assignee: Samsung SDI Co., Ltd.Inventors: Jung-Hyuck Choi, Young-Ho Chin, Chang-Seok Rho
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Publication number: 20090034176Abstract: A method of easily manufacturing an exhaust hole of a plasma display panel, the method including the operations of arranging a laser on one side of a substrate and arranging a reflective plate in line with the laser on the other opposite side of the substrate, radiating a laser beam of the laser to the substrate, and forming the exhaust hole by cooling the substrate.Type: ApplicationFiled: January 10, 2008Publication date: February 5, 2009Inventors: Jin-Nam Kim, Jung-Hyuck Choi
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Publication number: 20080129199Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.Type: ApplicationFiled: February 4, 2008Publication date: June 5, 2008Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
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Patent number: 7345424Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.Type: GrantFiled: November 2, 2005Date of Patent: March 18, 2008Assignee: Samsung SDI Co., Ltd.Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
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Publication number: 20070189685Abstract: An optical fiber can increase efficiency of a laser source and can uniformly distribute the intensity of laser beam when patterning electrodes using a laser. A plasma display panel uses the optical fiber. The shape of a cross-sectional shape of an inner side of the optical fiber is formed to correspond to an outer rim of a pattern mask. The optical fiber transmits light and is connected to the laser source.Type: ApplicationFiled: February 13, 2007Publication date: August 16, 2007Applicant: Samsung SDI Co., Ltd.Inventors: Jung-Hyuck Choi, Cheol-Lae Roh, Gyoo-Wan Han
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Publication number: 20060125399Abstract: A manufacturing method of a plasma display panel is to form a transparent electrode pattern on a boundary portion between a display region and a non-display region when the transparent electrode pattern is formed by the laser ablation method.Type: ApplicationFiled: December 9, 2005Publication date: June 15, 2006Inventors: Jung-Hyuck Choi, Young-Ho Chin, Chang-Seok Rho
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Publication number: 20060091804Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.Type: ApplicationFiled: November 2, 2005Publication date: May 4, 2006Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi