Patents by Inventor Jung-Hyuck Choi

Jung-Hyuck Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11335682
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Grant
    Filed: July 3, 2020
    Date of Patent: May 17, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
  • Patent number: 11217780
    Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: January 4, 2022
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jung Hyuck Choi, Won Shik Park
  • Patent number: 11189820
    Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: November 30, 2021
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jung Hyuck Choi, Won Shik Park
  • Publication number: 20200335500
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Application
    Filed: July 3, 2020
    Publication date: October 22, 2020
    Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
  • Patent number: 10777553
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: September 15, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
  • Publication number: 20190267608
    Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery using the same, which can improve the quality of a cut surface of an electrode plate and improve the reliability of the secondary battery. For example, disclosed is a method for manufacturing a secondary battery, the method comprising: an active material layer forming step of forming an active material layer by coating an active material on both surfaces of a collector plate; an active material layer removing step of removing a part of the active material layer by irradiating a laser beam to the both surfaces of the collector plate; and a cutting step of cutting the collector plate by irradiating a laser beam onto the collector plate from which the active material layer has been removed in the active material layer removing step.
    Type: Application
    Filed: June 20, 2017
    Publication date: August 29, 2019
    Inventors: Jung Hyuck CHOI, Won Shik PARK
  • Publication number: 20190221563
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Application
    Filed: March 25, 2019
    Publication date: July 18, 2019
    Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
  • Patent number: 10319720
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-hyuck Choi, Hae-wang Lee, Hyoun-jee Ha, Chul-hong Park
  • Publication number: 20190013314
    Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.
    Type: Application
    Filed: December 20, 2017
    Publication date: January 10, 2019
    Inventors: Jung-hyuck CHOI, Hae-wang LEE, Hyoun-jee HA, Chul-hong PARK
  • Patent number: 7772775
    Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: August 10, 2010
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
  • Patent number: 7498745
    Abstract: A manufacturing method of a plasma display panel is to form a transparent electrode pattern on a boundary portion between a display region and a non-display region when the transparent electrode pattern is formed by the laser ablation method.
    Type: Grant
    Filed: December 9, 2005
    Date of Patent: March 3, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jung-Hyuck Choi, Young-Ho Chin, Chang-Seok Rho
  • Publication number: 20090034176
    Abstract: A method of easily manufacturing an exhaust hole of a plasma display panel, the method including the operations of arranging a laser on one side of a substrate and arranging a reflective plate in line with the laser on the other opposite side of the substrate, radiating a laser beam of the laser to the substrate, and forming the exhaust hole by cooling the substrate.
    Type: Application
    Filed: January 10, 2008
    Publication date: February 5, 2009
    Inventors: Jin-Nam Kim, Jung-Hyuck Choi
  • Publication number: 20080129199
    Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.
    Type: Application
    Filed: February 4, 2008
    Publication date: June 5, 2008
    Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
  • Patent number: 7345424
    Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: March 18, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi
  • Publication number: 20070189685
    Abstract: An optical fiber can increase efficiency of a laser source and can uniformly distribute the intensity of laser beam when patterning electrodes using a laser. A plasma display panel uses the optical fiber. The shape of a cross-sectional shape of an inner side of the optical fiber is formed to correspond to an outer rim of a pattern mask. The optical fiber transmits light and is connected to the laser source.
    Type: Application
    Filed: February 13, 2007
    Publication date: August 16, 2007
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Jung-Hyuck Choi, Cheol-Lae Roh, Gyoo-Wan Han
  • Publication number: 20060125399
    Abstract: A manufacturing method of a plasma display panel is to form a transparent electrode pattern on a boundary portion between a display region and a non-display region when the transparent electrode pattern is formed by the laser ablation method.
    Type: Application
    Filed: December 9, 2005
    Publication date: June 15, 2006
    Inventors: Jung-Hyuck Choi, Young-Ho Chin, Chang-Seok Rho
  • Publication number: 20060091804
    Abstract: A Plasma Display Panel (PDP), in which the precision level in shaping the display electrodes is improved by changing the shape of the transparent electrode, includes: address electrodes formed on a first substrate, barrier ribs defining discharge cells in a space between the first substrate and a second substrate and display electrodes, formed on the second substrate in a direction crossing the address electrodes, including a pair of line portions arranged on both sides of each discharge cell and having a pair of protrusion portions, facing each other, extending from the respective line portions toward the center of each discharge cell. The pair of the protrusion portions has rounded contours at both corners of each protrusion portion facing the paired protrusion portion and its radius R1 of curvature at the corner satisfies the following condition: 0.05a=R1=0.2a, where a is a width of the protrusion portion measured in the extending direction of the line portion.
    Type: Application
    Filed: November 2, 2005
    Publication date: May 4, 2006
    Inventors: Chang-Seok Rho, Young-Ho Chin, Jung-Hyuck Choi