Abstract: An image sensor comprising a substrate including a plurality of unit pixels and including a first surface facing a first direction and a second surface facing a second direction opposite to the first direction, and a pixel isolation structure passing through the substrate in the second direction between the unit pixels, wherein the pixel isolation structure includes a buried conductive pattern extending from the second surface of the substrate into an inside of the substrate, and an insulating structure covering a lower surface of the buried conductive pattern and extending between the substrate and the buried conductive pattern, a first level and a second level that is under the first level being defined, the lower surface of the buried conductive pattern being positioned at the second level.

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.