Abstract: The present invention relates to an optical head for revealing near field through beams irradiated from a light source of a far field optical system, the optical head including: a flexible substrate made of a soft material and adapted to allow the optical head to be brought into close contact with a measured object and attached thereto even if the measured object has a curved or flat surface; and a near-field revelation part located between the measured object and the flexible substrate in such a manner as to have one side brought into contact with the flexible substrate and the other side detachably attached to the measured object and adapted to reveal the near field through the beams irradiated from the light source.

Abstract: The present invention relates to a dynamic optical head layer in an optical lithography system forming patterns on a substrate, the dynamic optical head layer being detachably mounted on the substrate, and the dynamic optical head layer includes a first dielectric layer formed on a top portion thereof, a second dielectric layer formed on a bottom portion thereof, and an dynamic nano aperture layer formed between the first dielectric layer and the second dielectric layer, wherein the dynamic nano aperture layer is made of a material having optical anisotropy, and the first dielectric layer and the second dielectric layer are made of oxide-based materials, nitride-based materials, and carbide-based materials.

Abstract: A near field optical imaging device includes: a light source for radiating light of a far field optical system; and an optical head including thin film layer for formation of dynamic optical nano apertures, combined with a measured object in one piece to generate a near field by a beam radiated from the light source, in which the measured object can be scanned in a depth direction by adjusting a depth of the near field, and the depth of the near field is adjusted by modifying a shape of an opening of the thin film layer for formation of dynamic optical nano apertures by adjusting an amount of the light radiated from the light source.

Abstract: A near field optical imaging device includes: a light source for radiating light of a far field optical system; and an optical head including thin film layer for formation of dynamic optical nano apertures, combined with a measured object in one piece to generate a near field by a beam radiated from the light source, in which the measured object can be scanned in a depth direction by adjusting a depth of the near field, and the depth of the near field is adjusted by modifying a shape of an opening of the thin film layer for formation of dynamic optical nano apertures by adjusting an amount of the light radiated from the light source.

Abstract: The present invention relates to an optical head for revealing near field through beams irradiated from a light source of a far field optical system, the optical head including: a flexible substrate made of a soft material and adapted to allow the optical head to be brought into close contact with a measured object and attached thereto even if the measured object has a curved or flat surface; and a near-field revelation part located between the measured object and the flexible substrate in such a manner as to have one side brought into contact with the flexible substrate and the other side detachably attached to the measured object and adapted to reveal the near field through the beams irradiated from the light source.

Abstract: The present invention relates to a dynamic optical head Layer in an optical lithography system forming patterns on a substrate, the dynamic optical head layer being detachably mounted on the substrate, and the dynamic optical head layer includes a first dielectric layer formed on a top portion thereof, a second dielectric layer formed on a bottom portion thereof, and an dynamic nano aperture layer formed between the first dielectric layer and the second dielectric layer, wherein the dynamic nano aperture layer is made of a material having optical anisotropy, and the first dielectric layer and the second dielectric layer are made of oxide-based materials, nitride-based materials, and carbide-based materials.