Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

Abstract: Disclosed is an electronic device module including a module substrate having first and second electronic device pair portions. The first electronic device pair portion may include a first and a second contact pad area and a first via area between the first and second contact pad areas. The first electronic device pair portion may also include a first layer and a second layer. The first layer may include a plurality of first lines connecting a plurality of contact pads in the first contact pad area on one side of the module substrate to a plurality of vias. The second layer may include a plurality of second lines connecting a plurality of contact pads in the second contact pad area to a plurality of vias in the via area. The second layer may also include a plurality of third lines connecting the first and second electronic device pair portions.

Abstract: Disclosed is an electronic device module including a module substrate having first and second electronic device pair portions. The first electronic device pair portion may include a first and a second contact pad area and a first via area between the first and second contact pad areas. The first electronic device pair portion may also include a first layer and a second layer. The first layer may include a plurality of first lines connecting a plurality of contact pads in the first contact pad area on one side of the module substrate to a plurality of vias. The second layer may include a plurality of second lines connecting a plurality of contact pads in the second contact pad area to a plurality of vias in the via area. The second layer may also include a plurality of third lines connecting the first and second electronic device pair portions.

Abstract: Provided is a module having a symmetric topology. The module may include a pair of diverging via bodies configured to receive complementary signals. The pair of diverging via bodies may be further configured to diverge the complementary signals in at least three pairs of diverged complementary signals. The module may further include at least three pairs of connecting via bodies configured to receive the at least three pairs of diverged complementary signals from the pair of diverging via bodies and configured to transmit the at least three pairs of diverged complementary signals to components.