Abstract: Provided a terahertz-wave detection element with high spatial resolution and suppressing a crack occurrence. A method of manufacturing the detection element capable of detecting a spatial intensity distribution of a terahertz wave includes: a step of forming an oxide layer on one main surface of a first substrate consisting of an electro-optic crystal; a step of joining the one main surface of the first substrate and a second substrate by an adhesive consisting; a step of thinning the first substrate of a joined body, to a thickness of 1-30 ?m by polishing the first substrate; and a step of obtaining a large number of terahertz-wave detection elements by cutting the joined body. The oxide layer is formed such that the first substrate becomes convex to a side of the one main surface by causing a tensile stress to act on it.

Abstract: A grating element includes: a support substrate; an optical material layer; a ridge optical waveguide having an incidence surface on which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; and a Bragg grating including concave and convex portions formed within the optical waveguide. The optical waveguide includes an incident portion between the incidence surface and the Bragg grating, and a tapered portion between the incident portion and the Bragg grating. In the Bragg grating, a propagation light propagates in single mode. The width Win of the optical waveguide in the incident portion is larger than the width Wgr of the optical waveguide in the Bragg grating. The width Wt of the optical waveguide in the tapered portion is decreased from the incident portion toward the Bragg grating. The relationships represented by formulas (1) to (3) are satisfied.

Abstract: It is produced an optical element including a support substrate, a clad layer provided on the support substrate, an optical material layer provided on the clad layer and a fine pattern formed in the optical material layer. The optical element has a warpage of +70 ?m or more and +2.0 mm or less. At least a resin layer is formed on the optical material layer. It is used a mold with a design pattern corresponding to the fine pattern formed therein. The design pattern is transferred to the resin layer by an imprinting method. The fine pattern is formed in the optical material layer by a dry etching method. The mold is capable of being deformed conforming to a curve of the resin layer.

Abstract: An optical element includes a support substrate and an optical material layer provided over the support substrate. A first fine pattern is formed on the surface of the support substrate. When forming the optical material layer, a second fine pattern, to which the first fine pattern P3 is transferred, is formed on the surface of the optical material layer.

Abstract: A plurality of Bragg gratings are formed at predetermined locations of a laminate including a mounting substrate, a clad layer provided on the mounting substrate and an optical material layer provided on the clad layer. Optical waveguides are formed each including at least each of the Bragg gratings. Masks are formed each covering a region corresponding to each of the grating elements on the optical material layer. The optical material layer and clad layer are etched to shape an end face of each of the grating elements.

Abstract: A semiconductor light source includes an active layer oscillating a semiconductor laser light. The grating device includes a ridge type optical waveguide comprising an incident face to which said semiconductor laser light is made incident and an emitting face for emitting an emitted light having a desired wavelength, a Bragg grating comprising convexes and concaves and formed in said ridge type optical waveguide, and an emitting side propagating portion disposed between the incident face and said Bragg grating. The system oscillates the laser in a reflection wavelength range of said Bragg grating. A width of the optical waveguide in the Bragg grating and a width of the optical waveguide at the emitting face are different from each other.

Abstract: A grating device includes a support substrate, an optical material layer 11 disposed on the support substrate and having a thickness of 0.5 ?m or more and 3.0 ?m or less, a ridge optical waveguide formed by a pair of ridge grooves in the optical material layer and having a light-receiving surface for receiving a semiconductor laser light and a light-emitting surface for emitting light having a desired wavelength, a Bragg grating 12 comprising convexes and concaves formed in the ridge optical waveguide, and a propagating portion 13 disposed between the light-receiving surface and the Bragg grating. The relationships represented by the following Formulas (1) to (4) are satisfied: 0.8 nm???G?6.0 nm??(1); 10 ?m?Lb?300 ?m??(2); 20 nm?td?250 nm??(3); and nb?1.8??(4).

Abstract: It is provided a reflective optical sensor device including a support substrate; an optical material layer disposed over said support substrate, said optical material layer having a thickness of 0.5 ?m or larger and 3.0 ?m or smaller; a ridge optical waveguide having an incident face to which a light from a semiconductor laser is incident and an emitting face for emitting an emission light with a desired wavelength; a Bragg grating with convexes and concaves formed within said ridge optical waveguide; and a propagating portion disposed between said incident face and said Bragg grating. The reflective optical sensor device satisfies relationships represented by formulas (1) to (3) below. 0.8 nm???G?6.0 nm??(1) 20 nm?td?250 nm??(2) nb?1.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: In an infrared detection element 15, a first substrate 36 is bonded to a front side of a pyroelectric substrate 20. Since the thermal expansion coefficient of the first substrate 36 is lower than that of the pyroelectric substrate 20, deformation of the pyroelectric substrate 20 due to thermal expansion can be suppressed by the first substrate 36. Further, since a thermal expansion coefficient difference D is 8.9 ppm/K or less, the thermal expansion coefficient between the first substrate 36 and the pyroelectric substrate 20 is not excessively large, and this can suppress deformation of the infrared detection element 15 due to the thermal expansion coefficient difference between the first substrate 36 and the pyroelectric substrate 20.

Abstract: An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 ?m-10 ?m thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.

Abstract: A connecting structure includes an optical waveguide part, a holding part of holding an optical input member, and an adhering part adhering the optical waveguide part and holding part. The optical waveguide part includes an optical waveguide substrate including an optical waveguide. At least one of the holding part and optical waveguide part includes a recess and an adhesive face adjacent to the recess. The adhering part is provided on the adhesive face and in a single region distant from the optical waveguide substrate in a direction of thickness of the optical waveguide substrate. The recess is provided between the adhering part and optical waveguide substrate. A space is provided between an end face of the optical input member and an end face of the optical waveguide.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: Provided a terahertz-wave detection element in which the occurrence of warping and a crack is suppressed. The detection element includes: an electro-optic crystal layer of a thickness 1-10 ?m in which a refractive index at an incident position of the terahertz wave changes in accordance with incident intensity; a substrate supporting the electro-optic crystal layer; a resin layer of a thickness 0.1-1 ?m that joins them; and a total reflection layer formed on a surface of the electro-optic crystal, consisting of a first dielectric multilayer film and having a thickness not less than 1 ?m. The detection element detects a spatial-characteristics distribution generated in probe light in superposition with the terahertz wave, thereby to detect the spatial intensity distribution of the incident terahertz wave. A ratio of a thickness of the resin layer to that of the total reflection layer is set not more than ?.

Abstract: Provided a terahertz-wave detection element with high spatial resolution and suppressing a crack occurrence. A method of manufacturing the detection element capable of detecting a spatial intensity distribution of a terahertz wave includes: a step of forming an oxide layer on one main surface of a first substrate consisting of an electro-optic crystal; a step of joining the one main surface of the first substrate and a second substrate by an adhesive consisting; a step of thinning the first substrate of a joined body, to a thickness of 1-30 ?m by polishing the first substrate; and a step of obtaining a large number of terahertz-wave detection elements by cutting the joined body. The oxide layer is formed such that the first substrate becomes convex to a side of the one main surface by causing a tensile stress to act on it.

Abstract: Provided a terahertz-wave detection element having high spatial resolution in which the occurrence of warping and a crack is suitably suppressed. The detection element includes: an electro-optic crystal layer in which a refractive index at an incident position of the terahertz wave changes in accordance with incident intensity of the terahertz wave; and a substrate supporting the electro-optic crystal layer. The detection element detects a spatial-characteristics distribution generated in probe light in superposition with the terahertz wave, thereby to detect the spatial intensity distribution of the incident terahertz wave. A joined part between the electro-optic crystal and the supporting substrate is an amorphous layer consisting of an oxide including a constituent element of the electro-optic crystal and the substrate, and also having a thickness of 1-50 nm. A thickness of the electro-optic crystal layer is 1-30 ?m.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.