Abstract: Techniques for reducing disturbance in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device having reduced disturbance. The semiconductor memory device may comprise a plurality of memory cells arranged in arrays of rows and columns. The semiconductor memory device may also comprise a plurality of data sense amplifiers, coupled to the plurality of memory cells, configured to perform one or more operations during an operation/access cycle, wherein the operation/access cycle may comprise an operation segment and a disturbance recovery segment.

Abstract: Techniques for reducing disturbance in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device having reduced disturbance. The semiconductor memory device may comprise a plurality of memory cells arranged in arrays of rows and columns. The semiconductor memory device may also comprise a plurality of data sense amplifiers, coupled to the plurality of memory cells, configured to perform one or more operations during an operation/access cycle, wherein the operation/access cycle may comprise an operation segment and a disturbance recovery segment.

Abstract: Techniques for reducing disturbance in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device having reduced disturbance. The semiconductor memory device may comprise a plurality of memory cells arranged in arrays of rows and columns. The semiconductor memory device may also comprise a plurality of data sense amplifiers, coupled to the plurality of memory cells, configured to perform one or more operations during an operation/access cycle, wherein the operation/access cycle may comprise an operation segment and a disturbance recovery segment.

Abstract: Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. Each memory cell may include a first region connected to a source line extending in a first orientation. Each memory cell may also include a second region connected to a bit line extending a second orientation. Each memory cell may further include a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region. The semiconductor device may also include a first barrier wall extending in the first orientation of the array and a second barrier wall extending in the second orientation of the array and intersecting with the first barrier wall to form a trench region configured to accommodate each of the plurality of memory cells.

Abstract: A system, method and computer program product are provided for producing an instance of a memory device from a banked memory architecture. The banked memory architecture specifies a maximum number of memory banks and a maximum number of rows per memory bank. The method comprises the step of receiving input parameters indicating a number of properties of the memory device, the properties comprising at least a number of rows R for the memory device. Thereafter, a degeneration process is performed on the banked memory architecture in order to produce the instance of a memory device having those properties.

Abstract: A memory array 2 has an address decoder 12 responsive to a repair signal to operate either in a normal mode or a repair mode. In the normal mode a data bit is stored within a single memory cell 6. In the repair mode a data bit is stored within multiple memory cells 6 of a common column of memory cells sharing bit lines 8. This provides increased defect resistance when operating in the repair mode at the cost of reduced memory capacity.

Abstract: A memory array 2 has an address decoder 12 responsive to a repair signal to operate either in a normal mode or a repair mode. In the normal mode a data bit is stored within a single memory cell 6. In the repair mode a data bit is stored within multiple memory cells 6 of a common column of memory cells sharing bit lines 8. This provides increased defect resistance when operating in the repair mode at the cost of reduced memory capacity.

Abstract: A system, method and computer program product are provided for producing an instance of a memory device from a banked memory architecture. The banked memory architecture specifies a maximum number of memory banks and a maximum number of rows per memory bank. The method comprises the step of receiving input parameters indicating a number of properties of the memory device, the properties comprising at least a number of rows R for the memory device. Thereafter, a degeneration process is performed on the banked memory architecture in order to produce the instance of a memory device having those properties.

Abstract: A pulse delay circuit that provides a delay for a pulsed input signal that does not vary significantly under changing temperature, power supply voltage or process conditions. The delay provided by the pulse delay circuit is not significantly limited in duration. The pulse delay circuit includes a pulse detector, an RC delay circuit and a pulsed signal generator. The delay is primarily determined by the RC time constant of the RC delay circuit.