Abstract: A communication chipset and a communication apparatus are disclosed. A register map establishes a communication channel with a plurality of apparatuses, a first data link module sends/receives physical layer data of a first type and processes a data link layer in accordance with the first type, and a second data link module sends/receives physical layer data of a second type and processing a data link layer in accordance with the second type. Further, a first processing module is connected to the first data link module and the second data link module and filters out data link data from the first data link module and the second data link module by using setup data of a plurality of communication channels stored in the register map.

Abstract: A communication chipset and a communication apparatus are disclosed. A register map establishes a communication channel with a plurality of apparatuses, a first data link module sends/receives physical layer data of a first type and processes a data link layer in accordance with the first type, and a second data link module sends/receives physical layer data of a second type and processing a data link layer in accordance with the second type. Further, a first processing module is connected to the first data link module and the second data link module and filters out data link data from the first data link module and the second data link module by using setup data of a plurality of communication channels stored in the register map.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: The present invention relates to a technology where, in the state that start pointers for n transmit buffers each having Ethernet frame size are fixedly declared and thus fixed addresses are assigned to the transmit buffers, packets can be stably retransmitted utilizing the fixed addresses of the transmit buffers, without executing dynamic pointer operations in re-transmission.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.