Abstract: Provided are a method and apparatus for encoding or decoding a coding unit on an outline of a picture. An image decoding method and apparatus according to an embodiment determine whether a current coding unit extends across an outline of a picture, by comparing a location of the current coding unit in the picture to at least one of a width and a height of the picture, split the current coding unit in at least one direction into a plurality of coding units based on a shape of the current coding unit upon determining that the current coding unit extends across the outline of the picture, obtain block shape information and split type information of the current coding unit from a bitstream and split the current coding unit into a plurality of coding units based on the block shape information and the split type information upon determining that the current coding unit does not extend across the outline of the picture, and decode a coding unit that is no longer split among the plurality of coding units.

Abstract: The present disclosure relates to a transmission of an agricultural work vehicle, the transmission comprising: a pre-shift part for performing speed shifting on driving transmitted from an engine of an agricultural work vehicle; a clutch part connected to the pre-shift part so as to selectively output driving transmitted from the pre-shift part; an adjusting part connected to the clutch part so as to perform speed shifting on driving transmitted from the clutch part; and a subsequent shift part connected to the adjusting part so as to perform speed shifting on driving transmitted from the adjusting part.

Abstract: A molding apparatus for fabricating a semiconductor package includes an upper mold including an upper cavity, a first side cavity at a first side of the upper cavity, a second side cavity formed at an opposite second side of the upper cavity, and a first driving part connected to the first side cavity and configured to move the first side cavity in a first direction, and a bottom mold including a bottom cavity configured to receive a molding target including a package substrate and at least one semiconductor chip. A width in the first direction between the first side cavity and the second side cavity may be smaller than a width of the package substrate in the first direction and greater than a width in the first direction between a first boundary and a second boundary of the at least one semiconductor chip.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: A display device includes a light emitting sub-pixel disposed in a display area, a light receiving pixel disposed in one of the display area or a non-display area, and a touch sensing layer including a sensing conductive layer overlapping with the light receiving pixel.

Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.

Abstract: A method of driving an electronic device includes displaying a plurality of fingerprint recognition icons on a display device configured to perform fingerprint recognition, and releasing a lock state of the display device through a fingerprint authentication process upon determining at least one first fingerprint recognition icon among the plurality of fingerprint recognition icons is touched. The plurality of fingerprint recognition icons include at least one first fingerprint recognition icon configured to support the fingerprint recognition and at least one second fingerprint recognition icon configured to not support the fingerprint recognition.

Abstract: A display device includes a substrate and a plurality of unit pixels disposed on the substrate. Each unit pixel includes a plurality of sub-pixels, a plurality of light sensing pixels, and a plurality of partition wall members. Each of the sub-pixels includes a light emitting element that emits light and a light emitting area from which the light is emitted. Each of the light sensing pixels includes a light receiving element that outputs a sensing signal corresponding to the light and a light receiving area that receives the light. In a plan view, each of the partition wall members surrounds the corresponding light receiving area and overlaps at least some of the sub-pixels.

Abstract: A display device includes a substrate including an organic film layer, a first lower pattern which is disposed on the substrate, includes overlap patterns, first bridges, and second bridges, and has a mesh shape, a second lower pattern which is disposed in a same layer as the first lower pattern, is connected to the first lower pattern, and surrounds the first lower pattern, a first active pattern disposed on the first lower pattern, and a plurality of gate electrodes disposed on the first active pattern and overlapping the overlap patterns.

Abstract: A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.

Abstract: According to an embodiment, a display device may include a display panel which may include a display area and a non-display area. The display panel may include a first subpixel including a first light emitting area, a second subpixel including a second light emitting area, a third subpixel including a third light emitting area, a sensor pixel including a light sensing area, a pixel defining layer separating the first through third light emitting areas and the light sensing area, and a partition wall disposed on the pixel defining layer to surround the sensor pixel.

Abstract: The present invention relates to a novel benzotriazole derivative compound, a tautomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof, or a stereoisomer thereof, which are related to a compound for inhibiting ENPP1, a composition for inhibiting ENPP1, and a method for inhibiting ENPP1.

Abstract: The present disclosure relates to a busbar unit for a motor, the busbar unit including: a first terminal; a second terminal provided to be spaced apart from the first terminal in a first direction; a third terminal stacked on the first terminal in a second direction perpendicular to the first direction; a fourth terminal stacked on the second terminal in the second direction; and a holder configured to support the first terminal, the second terminal, the third terminal, and the fourth terminal, thereby obtaining an advantageous effect of simplifying a structure and improving a degree of design freedom and spatial utilization.

Abstract: The disclosure relates to an ultrathin micro-spectrometer and a method of manufacturing the same, and more particularly, relates to an ultrathin micro-spectrometer including: a lens portion including: a convex lens; and a back-reflection grating layer which is formed on a rear surface of the convex lens and on the same surface of which a reflective diffraction grating and a first planar reflector are arranged; a substrate layer which is disposed to be spaced apart from the lens portion and on which a light incidence microslit is formed; a second planar reflector which is formed on the substrate layer; and a complementary metal-oxide-semiconductor (CMOS) sensor on which light reflected by the lens portion is focused, and a method of manufacturing the same.

Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: A method of manufacturing a semiconductor device includes: forming a trench in an insulating interlayer by etching the insulating interlayer; forming a conductive layer on bottom, side, and upper surfaces of the insulating interlayer where the trench is formed, using a first deposition process, the conductive layer on the bottom surface of the trench being thicker than the conductive layer on the side surface of the trench; forming a sacrificial layer in the trench covering the conductive layer formed on the bottom surface of the trench using a second deposition process different from the first deposition process; selectively removing the conductive layer formed on the upper surface of the insulating interlayer and formed on the side surface of the trench left exposed through the sacrificial layer; and selectively removing the sacrificial layer, to form a conductive line using the conductive layer remaining on the bottom surface of the trench.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.