Patents by Inventor Jungyol Jo

Jungyol Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM
    Publication number: 20070172591
    Abstract: Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.
    Type: Application
    Filed: January 19, 2007
    Publication date: July 26, 2007
    Applicants: SAMSUNG ELECTRONICS CO., LTD., AJOU UNIVERSITY INDUSTRY COOPERATION FOUNDATION
    Inventors: O-gweon SEO, Jungyol JO
  • Method for manufacturing a semiconductor device
    Publication number: 20020031889
    Abstract: The present invention provides a method for manufacturing a semiconductor device having a junction area formed by doping with a first conductive and a second conductive dopant. According to the method of the present invention, a surface of the semiconductor device is irradiated by electron beams or charged particles having energy of 100 to 500 keV. After the irradiation by electron beams or charged particles, annealing in a hydrogen atmosphere is performed for the irradiated semiconductor device.
    Type: Application
    Filed: September 28, 2001
    Publication date: March 14, 2002
    Applicant: S.H.I. Examination & Inspection Ltd
    Inventors: Yoshiaki Nishihara, Jungyol Jo