Patents by Inventor Jung-Youl Lee
Jung-Youl Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336206Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,Type: ApplicationFiled: April 13, 2022Publication date: October 20, 2022Applicant: DONGJIN SEMICHEM CO., LTD.Inventors: Ga Young SONG, Mi Hyun PARK, Jong Kyoung PARK, Jung Youl LEE, Hyun Jin KIM, Hyo San Lee, Han Sol LIM, Hoon HAN
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Patent number: 10712662Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.Type: GrantFiled: January 13, 2017Date of Patent: July 14, 2020Assignees: SAMSUNG ELECTRONICS CO., LTD., DONGJIN SEMICHEM CO., LTD.Inventors: Jin-A Ryu, Jung-Youl Lee, Kyung-Lyul Moon, Yool Kang, Hyun-Jin Kim, Yu-Jin Jeoung, Man-Ho Han
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Publication number: 20170199459Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.Type: ApplicationFiled: January 13, 2017Publication date: July 13, 2017Inventors: Jin-A RYU, Jung-Youl LEE, Kyung-Lyul MOON, Yool KANG, Hyun-Jin KIM, Yu-Jin JEOUNG, Man-Ho HAN
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Patent number: 9651867Abstract: Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.Type: GrantFiled: September 12, 2013Date of Patent: May 16, 2017Assignee: DONGJIN SEMICHEM CO., LTD.Inventors: Su-Young Han, Jung-Youl Lee, Jae-Woo Lee, Jae-Hyun Kim
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Patent number: 9416296Abstract: An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. in Formula 1, R1 is a monocyclic or polycyclic aromatic hydrocarbon group having 5 to 20 carbon atoms, R2 and R3 is independently a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 14 carbon atoms, a is an integer of 1 to 3, and b is an integer of 0 to 2. in Formula 4, n is an integer of 1 to 250.Type: GrantFiled: March 24, 2014Date of Patent: August 16, 2016Assignee: DONGJIN SEMICHEM CO., LTD.Inventors: Jung-Youl Lee, Young Bae Lim, Jong-Won Kim, Jae Woo Lee, Jae Hyun Kim
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Publication number: 20160053132Abstract: An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. in Formula 1, R1 is a monocyclic or polycyclic aromatic hydrocarbon group having 5 to 20 carbon atoms, R2 and R3 is independently a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 14 carbon atoms, a is an integer of 1 to 3, and b is an integer of 0 to 2. in Formula 4, n is an integer of 1 to 250.Type: ApplicationFiled: March 24, 2014Publication date: February 25, 2016Applicant: DONGJIN SEMICHEM CO., LTD.Inventors: Jung-Youl LEE, Young Bae LIM, Jong-Won KIM, Jae Woo LEE, Jae Hyun KIM
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Publication number: 20150286139Abstract: Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.Type: ApplicationFiled: September 12, 2013Publication date: October 8, 2015Applicant: DONGJIN SEMICHEM CO., LTD.Inventors: Su-Young Han, Jung-Youl Lee, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20140287587Abstract: Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (Tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using O2 plasma to form fine patterns.Type: ApplicationFiled: September 27, 2012Publication date: September 25, 2014Applicant: DONGJIN SEMICHEM CO., LTDInventors: Jung-Youl Lee, Eu-Jean Jang, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20140242520Abstract: An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.Type: ApplicationFiled: September 21, 2012Publication date: August 28, 2014Inventors: Jung-Youl Lee, Eu-Jean Jang, Jae-Woo Lee, Jae-Hyun Kim
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Patent number: 8293458Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.Type: GrantFiled: November 13, 2009Date of Patent: October 23, 2012Assignee: Dongjin Semichem .Co., Ltd.Inventors: Jun-Gyeong Lee, Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Woo Lee, Deog-Bae Kim, Jae-Hyun Kim
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Patent number: 8124311Abstract: Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula. In Formula, R1 is hydrogen atom or methyl group (CH3); Ra and Rb each is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Ra and Rb form one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.Type: GrantFiled: January 29, 2009Date of Patent: February 28, 2012Assignee: Dongjin Semichem Co., Ltd.Inventors: Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Woo Lee, Jae-Hyun Kim
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Patent number: 7935474Abstract: An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).Type: GrantFiled: July 17, 2008Date of Patent: May 3, 2011Assignee: Dongjin Semichem Co., Ltd.Inventors: Jung-Youl Lee, Min-Ja Yoo, Jeong-Sik Kim, Young-Bae Lim, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20100233622Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.Type: ApplicationFiled: November 13, 2009Publication date: September 16, 2010Applicant: Dongjin Semichem Co., Ltd.Inventors: Jun-Gyeong Lee, Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Woo Lee, Deog-Bae Kim, Jae-Hyun Kim
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Patent number: 7695893Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.Type: GrantFiled: June 6, 2008Date of Patent: April 13, 2010Assignee: Dongjin Semichem Co., Ltd.Inventors: Jae-Woo Lee, Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Hyun Kim
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Patent number: 7604919Abstract: The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.Type: GrantFiled: September 10, 2007Date of Patent: October 20, 2009Assignee: Dongjin Semichem Co., Ltd.Inventors: Deog-Bae Kim, Jung-Youl Lee, Geun-Jong Yu, Sang-Jung Kim, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20090197198Abstract: Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula. In Formula, R1 is hydrogen atom or methyl group (CH3); Ra and Rb each is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Ra and Rb form one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.Type: ApplicationFiled: January 29, 2009Publication date: August 6, 2009Inventors: Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Woo Lee, Jae-Hyun Kim
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Patent number: 7569325Abstract: A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.Type: GrantFiled: October 24, 2007Date of Patent: August 4, 2009Assignee: Dongjin Semichem Co., Ltd.Inventors: Jung-Youl Lee, Geun-Jong Yu, Sang-Jung Kim, Jae-Woo Lee, Deog-Bae Kim, Jae-Hyun Kim
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Patent number: 7501222Abstract: A polymer including a monomer represented by the following Formula and a photoresist composition including the same are disclosed. The polymer and photoresist composition can improve the resolution and the process margin due to the low activation energy of the deprotection reaction of the alcohol ester group including saturated cyclic hydrocarbyl group, and also can produce fine photoresist patterns because they have a stable PEB(Post Exposure Baking) temperature sensitivity, and further, can improve the focus depth margin and the line edge roughness of the resist layer. In the above Formula, R* is a hydrogen or methyl group, R1 is saturated hydrocarbyl group of 1 to 5 carbon atoms, R is mono-cyclic or multi-cyclic homo or hetero saturated hydrocarbyl group of 3 to 50 carbon atoms, and n is an integer of at least 2.Type: GrantFiled: June 21, 2006Date of Patent: March 10, 2009Assignee: Dongjin Semichem Co., Ltd.Inventors: Jung-Youl Lee, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20090023093Abstract: An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (0) or sulfur atom (S).Type: ApplicationFiled: July 17, 2008Publication date: January 22, 2009Inventors: Jung-Youl Lee, Min-Ja Yoo, Jeong-Sik Kim, Young-Bae Lim, Jae-Woo Lee, Jae-Hyun Kim
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Publication number: 20080305430Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.Type: ApplicationFiled: June 6, 2008Publication date: December 11, 2008Inventors: Jae-Woo Lee, Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Hyun Kim