Abstract: A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: An automatic document feeder and a scanner having the same are provided. The automatic document feeder can include a transport unit configured to transport a document to a scanning unit, an apparatus main body configured to hold the transport unit, a cover configured to be rotatably disposed on the apparatus main body, and a sensing unit disposed on a document transportation path to sense whether the cover is open or closed, the position of the document, or both. The automatic document feeder and the scanner having the same are configured to allow a jammed document to be ejected without having the document be damaged.

Abstract: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Abstract: Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.

Abstract: In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

Abstract: A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.

Abstract: An apparatus for adjusting a fixing pressure of an image forming apparatus is provided. The apparatus for adjusting the fixing pressure includes a pair of pressing members to rotatably support an axis of a first roller from both ends and to rotate about a hinge shaft to cause the first roller to press against a second roller, a pair of hinge cams to move the hinge shaft of the pair of pressing members in either of two directions, a driving unit to rotate the pair of hinge cams, and a control unit to control the driving unit to adjust the position of the hinge shaft.

Abstract: An image forming device includes a paper supply apparatus including an adjustable knock-up plate to store a plurality of papers and having a lifter, a pick-up roller and feed roller to pick up each of the plurality of papers and feed each of the plurality of papers into the image forming device respectively, a motor to drive a plurality of units in the image forming device including the knock-up plate, and a brake unit to selectively transmit and disconnect power to the lifter. The lifting operation of the knock-up plate, to smoothly supply papers to the image forming device, is performed by receiving power from an existing arbitrary motor installed within the image forming device, and not from an exclusive motor that is solely used to drive and lift the knock-up plate.

Abstract: An automatic document feeder and a scanner having the same are provided. The automatic document feeder can include a transport unit configured to transport a document to a scanning unit, an apparatus main body configured to hold the transport unit, a cover configured to be rotatably disposed on the apparatus main body, and a sensing unit disposed on a document transportation path to sense whether the cover is open or closed, the position of the document, or both. The automatic document feeder and the scanner having the same are configured to allow a jammed document to be ejected without having the document be damaged.

Abstract: Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.

Abstract: An image forming apparatus discharging a printed medium at a stable speed. A image developer affixes an image to a printing medium to form a printed medium and a transporting roller moves the printed medium toward a discharge roller. A one-way clutch driving the transport roller permits the discharge roller to assert control over the printed medium while the printed medium is in contact with the transport roller. The discharge roller is controllable to accelerate and decelerate the printed medium so that printed media are orderly stacked. The one way clutch permits the discharge roller and the transport roller to be spaced apart less than a length of the printed medium.

Abstract: In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

Abstract: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

Abstract: A paper supply apparatus to supply paper to printing devices such as printers or copiers. The paper supply apparatus includes a knock-up plate on which papers are stacked, a pick-up roller that feeds the papers into the printing device by picking up the papers stacked on the knock-up plate, a lifter that lifts the knock-up plate so that the papers stacked on the knock-up plate continuously contact with the pick-up roller, a motor for driving apparatuses in the printing device, a spring clutch that connects the motor to the lifter to transmit power, and a brake lever that selectively transmits power according to height variations of the pick-up roller via the spring clutch. In the paper supply apparatus, since the knock-up plate can be lifted using the power of the motor that is used for driving other apparatuses of the printing device, an exclusive motor for supplying paper is unnecessary, thereby reducing the number of parts and power consumption.