Abstract: The present invention relates to a composition for treating inflammatory diseases comprising germanium telluride nanosheets coated with polyvinylpyrrolidone, and the nanosheets have excellent anti-inflammatory and thus are excellent in treating inflammatory bowel disease and psoriasis.

Abstract: A cooking appliance may include a casing having a cavity and an upper space divided from the cavity, a door disposed at a front of the casing and configured to open and close the cavity, a panel disposed at the front of the casing at a height different from a height of the door, and configured to be moved from a first position to a second position, and a hinge that connects the casing and the panel to each other and is disposed in the upper space of the casing. The hinge may include a drive arm. The drive arm may protrude forward from the upper space to be connected to the panel, and the drive arm may be connected to a plurality of hinge coupled portions provided in the panel.

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: The present invention provides a knock box-integrated cleaner for a coffee machine portafilter, the knock box-integrated cleaner comprising: a knock box having an inner space part for receiving coffee grounds; a knock member in which fixing members are respectively coupled through guide rails to both sides of a cylindrical rubber bar disposed in the knock box, the guide rails being formed in upper parts of the knock box; a cleaner body in which a coupling projection and a mounting projection protrude from the cleaner body and a motor is installed in a center of a space part formed inside the body, the mounting projection having an upper part for mounting a handle of a portafilter; a collecting bucket which is inserted into the space part formed inside the cleaner body and has a protuberant part, formed protruding therefrom, for receiving the motor, and a space part for receiving coffee grounds inside, the protuberant part having a through hole formed in the upper end thereof, a motor shaft protruding out of t

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: A system interconnect is provided which includes a first channel configured to transmit a plurality of control signals based on a first clock, and a second channel configured to transmit a plurality of data signals which correspond to the control signals based on a second clock. The first channel and the second channel allows a predetermined range of out-of-orderness, and the predetermined range of the out-of-orderness indicates that an order of the control signals is different from an order of the data signals which correspond to the control signals.

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: A test method of the semiconductor memory device including a memory cell array and an anti-fuse array includes detecting failed cells included in the memory cell array; determining a fail address corresponding to the detected failed cells; storing the determined fail address in a first region of the memory cell array; and reading the fail address stored in the first region to program the read fail address in the anti-fuse array. According to the test method of a semiconductor memory device and the semiconductor memory system, since the test operation can be performed without an additional memory for storing an address, the semiconductor memory device and the test circuit can be embodied by a small area.

Abstract: A method of managing dynamic memory reallocation includes receiving an input address including a block bit part, a tag part, and an index part and communicating the index part to a tag memory array, receiving a tag group communicated by the tag memory array based on the index part, analyzing the tag group based on the block bit part and the tag part and changing the block bit part and the tag part based on a result of the analysis, and outputting an output address including a changed block bit part, a changed tag part, and the index part.

Abstract: A system on chip (SOC) includes a slave device, a plurality of master devices, an interconnect device and a plurality of service controllers. The master devices generate requests to demand services from the slave device. The interconnect device is coupled to the slave device and the master devices through respective channels, and the interconnect device performs an arbitrating operation on the requests. The service controllers control request flows from the master devices adaptively depending on an operational environment change of the SOC.

Abstract: A memory system includes a high-bandwidth memory device, the high-bandwidth memory device having a relatively high operation bandwidth, the high-bandwidth memory device having a plurality of access channels. A low-bandwidth memory device has a relatively low operation bandwidth relative to the high-bandwidth memory device, the low-bandwidth memory device having one or more access channels. An interleaving unit performs a memory interleave operation among the plurality of access channels of the high-bandwidth memory device and an access channel of the one or more access channels of the low-bandwidth memory device.

Abstract: A system on chip (SoC) is present that includes a plurality of master interfaces, a plurality of slave interfaces, and an interface circuit which is connected between the plurality of master interfaces and the plurality of slave interfaces and includes a plurality of components. When a first master interface among the plurality of master interfaces and a first slave interface among the plurality of slave interfaces are paired, a first group of the components which forms a first signal path between the first master interface and the first slave interface among the plurality of components is enabled according to a control of the first master interface.

Abstract: A bad page management system is provided to guarantee a yield of a volatile semiconductor memory device such as a DRAM. A bad page list exists in a DRAM. A page remapper in a memory controller performs a page remapping operation in parallel with a normal operation of a scheduling unit to perform a latency overhead hidden function. A chip size of the DRAM is reduced or minimized. A DRAM controller performs a latency overhead hidden function to control a DRAM.

Abstract: In one example embodiment, a memory system includes a memory module and a memory controller. The memory module is configured generate density information of the memory module based on a number of the bad pages of the memory module, the bad pages being pages that have a fault. The memory controller is configured to map a continuous physical address to a dynamic random access memory (dram) address of the memory module based on the density information received from the memory module.

Abstract: A method for executing a virtual machine (VM) in an electronic device is provided. The method includes obtaining a position of a first base disk image stored in a disk image storage, creating a root disk image that backs the first base disk image based on the obtained position, and executing the VM based on the created root disk image. The method further includes, in the run-time of the VM, changing the first base disk to the second base disk, and continuing the VM based on the merged root disk.

Abstract: A system interconnect is provided which includes a first channel configured to transmit a plurality of control signals based on a first clock, and a second channel configured to transmit a plurality of data signals which correspond to the control signals based on a second clock. The first channel and the second channel allows a predetermined range of out-of-orderness, and the predetermined range of the out-of-orderness indicates that an order of the control signals is different from an order of the data signals which correspond to the control signals.

Abstract: A test method of the semiconductor memory device including a memory cell array and an anti-fuse array includes detecting failed cells included in the memory cell array; determining a fail address corresponding to the detected failed cells; storing the determined fail address in a first region of the memory cell array; and reading the fail address stored in the first region to program the read fail address in the anti-fuse array. According to the test method of a semiconductor memory device and the semiconductor memory system, since the test operation can be performed without an additional memory for storing an address, the semiconductor memory device and the test circuit can be embodied by a small area.

Abstract: A memory system includes a high-bandwidth memory device, the high-bandwidth memory device having a relatively high operation bandwidth, the high-bandwidth memory device having a plurality of access channels. A low-bandwidth memory device has a relatively low operation bandwidth relative to the high-bandwidth memory device, the low-bandwidth memory device having one or more access channels. An interleaving unit performs a memory interleave operation among the plurality of access channels of the high-bandwidth memory device and an access channel of the one or more access channels of the low-bandwidth memory device.