Abstract: A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.

Abstract: An ion neutralization module comprising a reflector configured to neutralize an ion, a frame configured to support the reflector, and a conductive adhesive between the reflector and the frame to attach the reflector to the frame.

Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.

Abstract: An electrostatic chuck includes an electrostatic chuck body having a step portion protruding from a lower end, an adhesive layer disposed on an upper surface of the electrostatic chuck body, a ceramic puck adhered to the adhesive layer and having an edge protruding from the upper surface of the electrostatic chuck body, and a sealant disposed between the step portion and the edge of the ceramic puck and configured to block reaction gas from permeating into the adhesive layer. The sealant includes a coating layer disposed on an external surface thereof, and the coating layer includes a metal oxide including a single rare earth oxide and/or a multilayer heterogeneous metal oxide.

Abstract: An electrostatic chuck apparatus includes a base and a dielectric layer on the base. The dielectric layer includes a support surface opposite the base and a clamping electrode laterally extending along the support surface. The clamping electrode extends beyond an edge of the support surface such that the support surface is laterally recessed relative to the clamping electrode. The clamping electrode is configured to attract a substrate to the support surface by electrostatic force, and laterally extends along the support surface up to or beyond an edge of the substrate. Related electrostatic chuck assemblies, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the same are also discussed.