Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

Abstract: A semiconductor processing equipment includes a chamber housing, an electrostatic chuck in the chamber housing, a lower electrode below the electrostatic chuck in the chamber housing, an upper electrode above the electrostatic chuck in the chamber housing, a first power supply that supplies first radio frequency (RF) power to the lower electrode, a second power supply that supplies second RF power to the upper electrode, a first voltage and current (VI) sensor between the lower electrode and an inner wall of the chamber housing, a second VI sensor between the upper electrode and the inner wall of the chamber housing, and a controller that determines a phase of the first and second RF powers using the first and second VI sensors, controls the first and second power supplies, based on the determined phases.

Abstract: A plasma control apparatus includes a first RF circuit, and a second RF circuit connected to an upper electrode and a lower electrode of a plasma chamber, respectively. The apparatus includes a plurality of RF generators, a plurality of voltage sensors associated with the RF circuits, and a controller configured to determine a waveforms of RF voltage signal components at the electrodes of the plasma chamber; and adjust a first phase of the first RF source power signal such that a first error between the first waveform of the first RF voltage signal component and a first target waveform of the first RF voltage signal component is minimized; and adjust a second phase of the second RF source power signal such that a second error between the second waveform of the second RF voltage signal component and a second target waveform of the second RF voltage signal component is minimized.

Abstract: A semiconductor processing facility includes a body and a tube. The body includes a base layer; a first protective layer disposed on the base layer, wherein the first protective layer having at least one of a pore portion, a pit portion, and a tunnel portion; a second protective layer disposed on the first protective layer, wherein the second protective layer fills in the at least one of the pore portion, the pit portion, and the tunnel portion; and a third protective layer disposed on the second protective layer, wherein the third protective layer defines the tube.

Abstract: A semiconductor wafer processing apparatus includes a plasma chamber, a processing chamber connected to the plasma chamber and including an electrostatic chuck configured to support a semiconductor wafer, a plurality of grid electrodes between the plasma chamber and the processing chamber, and through-holes extending through the plurality of grid electrodes, where the plurality of grid electrodes include a first grid electrode and a second grid electrode spaced apart from the first grid electrode in a direction from the plasma chamber to the processing chamber and at least one of the first grid electrode and the second grid electrode includes a plurality of electrode plates.

Abstract: A heater is provided, the heater including: a head portion having a first region and a second region disposed outside the first region; a coating film covering at least a portion of an upper surface of the head portion; and a support portion extending from a central portion of the first region of the head portion in a direction perpendicular to a lower surface of the head portion, wherein the coating film includes a first vertical region stacked on an upper surface of the head portion, and having an isotropic texture structure; a second vertical region stacked on an upper surface of the first vertical region, and having a columnar crystal grain structure; and a third vertical region stacked on an upper surface of the second vertical region, and having an isotropic texture structure.

Abstract: A reflector for generating neutral beams, the reflector includes a plurality of reflective plates Ion beams from an ion source collide against each of the plurality of reflective plates. The plurality of reflective plates reflect the ion beams and convert the ion beams into neutral beams. A coupling portion disposed between the plurality of reflective plates. Each of the plurality of reflective plates comprises a first surface, a second surface disposed on a first end of the first surface, and a third surface disposed on a second end of the first surface that is opposite to the first end.

Abstract: A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.

Abstract: An ion neutralization module comprising a reflector configured to neutralize an ion, a frame configured to support the reflector, and a conductive adhesive between the reflector and the frame to attach the reflector to the frame.

Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.

Abstract: An electrostatic chuck includes an electrostatic chuck body having a step portion protruding from a lower end, an adhesive layer disposed on an upper surface of the electrostatic chuck body, a ceramic puck adhered to the adhesive layer and having an edge protruding from the upper surface of the electrostatic chuck body, and a sealant disposed between the step portion and the edge of the ceramic puck and configured to block reaction gas from permeating into the adhesive layer. The sealant includes a coating layer disposed on an external surface thereof, and the coating layer includes a metal oxide including a single rare earth oxide and/or a multilayer heterogeneous metal oxide.

Abstract: An electrostatic chuck apparatus includes a base and a dielectric layer on the base. The dielectric layer includes a support surface opposite the base and a clamping electrode laterally extending along the support surface. The clamping electrode extends beyond an edge of the support surface such that the support surface is laterally recessed relative to the clamping electrode. The clamping electrode is configured to attract a substrate to the support surface by electrostatic force, and laterally extends along the support surface up to or beyond an edge of the substrate. Related electrostatic chuck assemblies, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the same are also discussed.