Abstract: Some embodiments of the disclosure provide an apparatus comprising: a word line array including a plurality of word lines each extending through a memory mat in a first horizontal direction, the plurality of word lines including first and second word lines arranged adjacent to each other in a second horizontal direction; and a word line contact of the first word line, the word line contact separated from the second word line by a gap. The first and second word lines each have a first oxide film at a center area of the word line array in the memory mat. The first and second word lines each have a second oxide film at an edge area of the word line array outside the memory mat, the second oxide film having a thickness greater than a thickness of the first oxide film.

Abstract: A semiconductor package includes a first substrate. Solder balls are disposed on a lower surface of the first substrate. A first semiconductor chip is on an upper surface of the first substrate. The solder balls include a first ball disposed in a first direction from a center of the first substrate and spaced apart from the center by a first distance. A second ball is disposed in a third direction from the center between the first and second directions and is spaced apart from the center by a second distance less than or equal to the first distance. A first pitch between the first ball and a first adjacent ball disposed immediately to an outer side in the first direction is less than a second pitch between the first ball and a second adjacent ball disposed immediately adjacent to an inner side in the first direction.

Abstract: A wheel bearing for a part-time four-wheel drive vehicle capable of switching between a two-wheel drive mode and a four-wheel drive mode may be provided. The wheel bearing includes a wheel hub to which a vehicle wheel is mounted and which rotates together with the vehicle wheel; at least one inner ring mounted to the wheel hub; an outer ring fixedly coupled to a vehicle-body-side member; a plurality of rolling elements configured to rotatably support the wheel hub and the inner ring relative to the outer ring; and a coupler mounted to the wheel hub. The coupler includes outer circumferential surface splines extending in an axial direction on an outer circumferential surface thereof, and the outer circumferential surface splines of the coupler may be configured such that a hardening heat treatment is performed at least on a portion that is engaged with a clutch member.

Abstract: A light emitting display device including a bank defining a plurality of light emitting portions spaced apart from each other on a substrate, a light emitting element including a first electrode, an intermediate layer and a second electrode on the first electrode provided in each of the light emitting portions, an encapsulation layer covering the light emitting element, a touch wiring disposed on the encapsulation layer, the touch wiring including a linear portion longer than a diameter of any one of the light emitting portions or a side of any one of the light emitting portions between the plurality of light emitting portions on a plane, a light-shielding layer covering the touch wiring on the encapsulation layer, and a color filter layer disposed on the encapsulation layer corresponding to each of the light emitting portions.

Abstract: An integrated circuit construction comprises conductive vias that are individually directly above and directly electrically coupled to individual operative transistors. Insulator islands individually extend upwardly from individual inoperative transistors. Insulating material surrounds individual of the insulator islands and individual of the conductive vias. Insulative material is directly above the insulating material. Conducting vias individually extend through the insulative material. Some of the conducting vias are directly above and directly against individual of the conductive vias. Another some of the conducting vias are directly above individual of the insulator islands. Other embodiments, including method, are disclosed.

Abstract: An apparatus for manufacturing a glass article includes a chamber defining an inner space that accommodates a molten salt for molding and chemical strengthening the glass article, a first electrode disposed in the inner space of the chamber and in contact with the molten salt, a second electrode disposed in the inner space of the chamber, in contact with the molten salt, and facing the first electrode, and a power supply connected to the first electrode and the second electrode.

Abstract: A semiconductor package is provided. a semiconductor package comprises a package substrate, an interposer attached onto the package substrate, a first semiconductor chip attached onto the interposer by a first bonding member, a second bonding member positioned on the interposer and spaced apart from the first semiconductor chip, a cover glass positioned on the second bonding member and an encapsulant encapsulating the package substrate, the interposer, and the cover glass.

Abstract: A method for capturing an identification (ID) card image including determining whether an ID card within an image received via a sensor is positioned according to a pre-set guide line; acquiring an ID card image based on the guide line if it is determined that the ID card is positioned according to the pre-set guide line, inputting the ID card image into a first artificial intelligence model to determine whether the ID card contained in the ID card image corresponds to one of pre-set ID card types, determining whether user information within the ID card image is identifiable, and capturing the ID card image if it is determined that the user information within the ID card image is identifiable, and an electronic device for performing the same are disclosed.

Abstract: A display device is disclosed. The display device includes a substrate and a gate driver configured to supply a scan signal to a gate line. The gate driver includes a pull-up transistor and a pull-down transistor, with at least one of the transistors including a plurality of thin film transistors connected in parallel. These thin film transistors include source electrodes, drain electrodes, a common gate electrode, and a common active layer. The common gate electrode and the common active layer extend in a first direction, while the source and drain electrodes are disposed on the common active layer and spaced apart from the common gate electrode in a second direction crossing the first direction. The common active layer includes doped regions doped with a dopant and undoped regions not doped with the dopant. The doped regions and the undoped regions alternate as the common active layer extends in the first direction. This structure enables compact integration and efficient driving of the scan signal.

Abstract: A light emitting display device may include a substrate including an active area having a hole and a non-active area outside the active area; a plurality of subpixels in the active area and spaced apart from the hole at least by a first distance, each of the plurality of subpixels including a transistor, and a light-emitting element including a first electrode connected to the transistor, a second electrode facing the first electrode, and an intermediate layer interposed between the first electrode and the second electrode; and a dam region surrounding the hole within the first distance from the hole in a plan view, the dam region including a bank material layer having an undercut structure. The dam region may include at least one light-shielding material layer.

Abstract: A glass stress test method includes breaking a glass, analyzing a shape of a crack of a broken portion of the glass in a plan view, finding a breakage origin of the glass based on the shape of the crack in the plan view, analyzing a cross-section of the breakage origin, and calculating a stress of the glass based on a cross-sectional analysis result of the breakage origin. The stress of the glass is calculated as a value proportional to a floor constant defined by a condition of a floor surface disposed when the glass is broken.

Abstract: An ink composition, a production method thereof, a composite prepared therefrom, and devices including the same are provide. The ink composition including a semiconductor nanoparticle and a polymerizable monomer. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, a Group 13 metal including indium and gallium, and a Group 16 element including sulfur, and the ink composition further comprises a metal halide and a first organic ligand including a compound or a moiety represented by R1—COOA, wherein R1 is a first organic group, and A represents hydrogen or a portion linked to a surface of the semiconductor nanoparticle.

Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an apparatus includes a semiconductive region, an insulative region that is adjacent to the semiconductive region, and a conductive line that extends across the semiconductive region and at least a portion of the insulative region. The apparatus includes a contact structure that conjoins with the conductive line and that electrically couples the conductive line with the semiconductive region. The apparatus includes a footing structure that conjoins with the conductive line and that penetrates into the insulative region to anchor the conductive line with the insulative region.

Abstract: A secondary battery, including an electrode assembly having a first electrode, a separator, a second electrode, a first electrode tab connected to the first electrode, and a second electrode tab connected to the second electrode, a receiving can having one open surface to accommodate the electrode assembly, the receiving can being connected to the first electrode tab, and a cap assembly sealing the one open surface of the receiving can, the cap assembly being connected to the second electrode tab, wherein the receiving can includes a tab hole on a bottom surface thereof, and wherein at least a part of the first electrode tab is inserted into the tab hole and connected to the receiving can.

Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes an array of semiconductive fin structures penetrating through a dielectric region. The integrated assembly includes a semiconductive moat structure along the dielectric region that includes a sidewall structure The sidewall structure includes first segments that are biased inwardly toward the array of semiconductive fin structures and second segments that are biased outwardly away from the array of semiconductive fin structures, where the first segments and second segments alternate along an edge of the dielectric region to form a crenellated profile along a surface of the sidewall structure that faces the dielectric region. The integrated assembly includes an array of conductive line structures that extend across the array of semiconductive fin structures, across the dielectric region, and across the sidewall structure.

Abstract: A method for increasing dendritic cell migration ability, and a use thereof are disclosed. A method according to one aspect can increase the migration ability of mature dendritic cells and increase the induction, by dendritic cells, of inflammatory cytokine production, T lymphocyte proliferation and T lymphocyte polarization, and thus can be used for the prevention or treatment of immune-related diseases.

Abstract: A glass article, a method for manufacturing the glass article, and a display device and an electronic device are provided. The glass article includes an amorphous glass layer having an amorphous phase, crystal particles dispersed in the amorphous glass layer and having a crystalline phase, and chromium ions dispersed in the amorphous glass layer.

Abstract: Apparatus and methods are disclosed, including transistors, semiconductor devices and systems. Example semiconductor devices and methods include an isolation structure within a substrate, and two layers of different dielectric material including a first dielectric layer and a second silicon oxide layer, both layers located over the isolation structure. Examples are further shown that include a first contact and a second contact both passing through a first dielectric of the two layers with side surfaces of the first contact and the second contact surrounded by the first dielectric.

Abstract: In an embodiment a headrest position adjustment apparatus includes a fixing frame having a guide plate including a first slide hole at an upper end portion and a second slide hole at a lower end portion, wherein a rear surface portion of the fixing frame is configured to be mounted to a high-back board, a first motor mounted on the fixing frame, wherein the first motor is configured to move a headrest, a fixing guide mounted on the fixing frame, wherein the fixing guide has a pair of first guide pipes facing forward, a first slide including upper guide holes arranged on an upper position on opposite sides of the first slider and lower guide holes arranged on a lower position of the opposite sides of the first slider and into which the first guide pipes are inserted, and a second slider mounted on the headrest.

Abstract: This application relates to a method for manufacturing a printed circuit board. According to the present application, it is possible to manufacture a printed circuit board having excellent bonding strength between a ceramic substrate and a metal sheet, and the manufacturing cost thereof can be reduced.