Abstract: An apparatus for manufacturing a glass article includes a chamber defining an inner space that accommodates a molten salt for molding and chemical strengthening the glass article, a first electrode disposed in the inner space of the chamber and in contact with the molten salt, a second electrode disposed in the inner space of the chamber, in contact with the molten salt, and facing the first electrode, and a power supply connected to the first electrode and the second electrode.

Abstract: A semiconductor package is provided. a semiconductor package comprises a package substrate, an interposer attached onto the package substrate, a first semiconductor chip attached onto the interposer by a first bonding member, a second bonding member positioned on the interposer and spaced apart from the first semiconductor chip, a cover glass positioned on the second bonding member and an encapsulant encapsulating the package substrate, the interposer, and the cover glass.

Abstract: A method for capturing an identification (ID) card image including determining whether an ID card within an image received via a sensor is positioned according to a pre-set guide line; acquiring an ID card image based on the guide line if it is determined that the ID card is positioned according to the pre-set guide line, inputting the ID card image into a first artificial intelligence model to determine whether the ID card contained in the ID card image corresponds to one of pre-set ID card types, determining whether user information within the ID card image is identifiable, and capturing the ID card image if it is determined that the user information within the ID card image is identifiable, and an electronic device for performing the same are disclosed.

Abstract: A display device is disclosed. The display device includes a substrate and a gate driver configured to supply a scan signal to a gate line. The gate driver includes a pull-up transistor and a pull-down transistor, with at least one of the transistors including a plurality of thin film transistors connected in parallel. These thin film transistors include source electrodes, drain electrodes, a common gate electrode, and a common active layer. The common gate electrode and the common active layer extend in a first direction, while the source and drain electrodes are disposed on the common active layer and spaced apart from the common gate electrode in a second direction crossing the first direction. The common active layer includes doped regions doped with a dopant and undoped regions not doped with the dopant. The doped regions and the undoped regions alternate as the common active layer extends in the first direction. This structure enables compact integration and efficient driving of the scan signal.

Abstract: A light emitting display device may include a substrate including an active area having a hole and a non-active area outside the active area; a plurality of subpixels in the active area and spaced apart from the hole at least by a first distance, each of the plurality of subpixels including a transistor, and a light-emitting element including a first electrode connected to the transistor, a second electrode facing the first electrode, and an intermediate layer interposed between the first electrode and the second electrode; and a dam region surrounding the hole within the first distance from the hole in a plan view, the dam region including a bank material layer having an undercut structure. The dam region may include at least one light-shielding material layer.

Abstract: A glass stress test method includes breaking a glass, analyzing a shape of a crack of a broken portion of the glass in a plan view, finding a breakage origin of the glass based on the shape of the crack in the plan view, analyzing a cross-section of the breakage origin, and calculating a stress of the glass based on a cross-sectional analysis result of the breakage origin. The stress of the glass is calculated as a value proportional to a floor constant defined by a condition of a floor surface disposed when the glass is broken.

Abstract: An ink composition, a production method thereof, a composite prepared therefrom, and devices including the same are provide. The ink composition including a semiconductor nanoparticle and a polymerizable monomer. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, a Group 13 metal including indium and gallium, and a Group 16 element including sulfur, and the ink composition further comprises a metal halide and a first organic ligand including a compound or a moiety represented by R1—COOA, wherein R1 is a first organic group, and A represents hydrogen or a portion linked to a surface of the semiconductor nanoparticle.

Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an apparatus includes a semiconductive region, an insulative region that is adjacent to the semiconductive region, and a conductive line that extends across the semiconductive region and at least a portion of the insulative region. The apparatus includes a contact structure that conjoins with the conductive line and that electrically couples the conductive line with the semiconductive region. The apparatus includes a footing structure that conjoins with the conductive line and that penetrates into the insulative region to anchor the conductive line with the insulative region.

Abstract: A secondary battery, including an electrode assembly having a first electrode, a separator, a second electrode, a first electrode tab connected to the first electrode, and a second electrode tab connected to the second electrode, a receiving can having one open surface to accommodate the electrode assembly, the receiving can being connected to the first electrode tab, and a cap assembly sealing the one open surface of the receiving can, the cap assembly being connected to the second electrode tab, wherein the receiving can includes a tab hole on a bottom surface thereof, and wherein at least a part of the first electrode tab is inserted into the tab hole and connected to the receiving can.

Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes an array of semiconductive fin structures penetrating through a dielectric region. The integrated assembly includes a semiconductive moat structure along the dielectric region that includes a sidewall structure The sidewall structure includes first segments that are biased inwardly toward the array of semiconductive fin structures and second segments that are biased outwardly away from the array of semiconductive fin structures, where the first segments and second segments alternate along an edge of the dielectric region to form a crenellated profile along a surface of the sidewall structure that faces the dielectric region. The integrated assembly includes an array of conductive line structures that extend across the array of semiconductive fin structures, across the dielectric region, and across the sidewall structure.

Abstract: A method for increasing dendritic cell migration ability, and a use thereof are disclosed. A method according to one aspect can increase the migration ability of mature dendritic cells and increase the induction, by dendritic cells, of inflammatory cytokine production, T lymphocyte proliferation and T lymphocyte polarization, and thus can be used for the prevention or treatment of immune-related diseases.

Abstract: A glass article, a method for manufacturing the glass article, and a display device and an electronic device are provided. The glass article includes an amorphous glass layer having an amorphous phase, crystal particles dispersed in the amorphous glass layer and having a crystalline phase, and chromium ions dispersed in the amorphous glass layer.

Abstract: Apparatus and methods are disclosed, including transistors, semiconductor devices and systems. Example semiconductor devices and methods include an isolation structure within a substrate, and two layers of different dielectric material including a first dielectric layer and a second silicon oxide layer, both layers located over the isolation structure. Examples are further shown that include a first contact and a second contact both passing through a first dielectric of the two layers with side surfaces of the first contact and the second contact surrounded by the first dielectric.

Abstract: In an embodiment a headrest position adjustment apparatus includes a fixing frame having a guide plate including a first slide hole at an upper end portion and a second slide hole at a lower end portion, wherein a rear surface portion of the fixing frame is configured to be mounted to a high-back board, a first motor mounted on the fixing frame, wherein the first motor is configured to move a headrest, a fixing guide mounted on the fixing frame, wherein the fixing guide has a pair of first guide pipes facing forward, a first slide including upper guide holes arranged on an upper position on opposite sides of the first slider and lower guide holes arranged on a lower position of the opposite sides of the first slider and into which the first guide pipes are inserted, and a second slider mounted on the headrest.

Abstract: This application relates to a method for manufacturing a printed circuit board. According to the present application, it is possible to manufacture a printed circuit board having excellent bonding strength between a ceramic substrate and a metal sheet, and the manufacturing cost thereof can be reduced.

Abstract: A glass article comprises an amorphous glass layer having an amorphous phase, and crystal particles dispersed in the amorphous glass layer and having a crystalline phase, wherein some of the crystal particles protrude from a surface of the amorphous glass layer.

Abstract: In an embodiment a headrest position adjustment system includes a housing mounted on a front surface portion of a high-back board, a headrest mounted on the housing, the headrest being capable of moving forward and backward, a fixing frame comprising slide holes in opposite side portions of the fixing frame, the fixing frame being mounted inside the housing, a first motor mounted on the fixing frame, the first motor having a first lead screw facing forward as an output shaft, and a side bracket disposed on each of the opposite side portions of the fixing frame and connected to the headrest, the side bracket being fastened to a slide hole such that the side bracket is capable of being moved forward and backward.

Abstract: The present disclosure provides a test connector disposed between a test device and a device to be inspected. The test connector includes at least one conductor configured to be conductive in a vertical direction and be elastically compressively deformable in the vertical direction when pressed, a support configured to support the conductor, and an insulator having at least one through hole into which the conductor is inserted in the vertical direction and being coupled to the support. A gap is formed between an inner circumferential surface of the through hole and an outer circumferential surface of the conductor. The insulator includes at least one elastic insulating layer that is elastically compressively deformable in the vertical direction and includes an elastic material, and at least one support insulating layer that is stacked in the vertical direction together with the insulating layer and has higher hardness than the insulating layer.

Abstract: An embodiment vehicle headrest device includes a headrest including a pad portion configured to contact and support a sitting passenger's head and a cover portion positioned behind the pad portion, the pad portion being configured to move diagonally, a main frame coupled to a headrest stay and configured to move upwards/downwards along the headrest stay, and a motor module portion connected to the pad portion and the main frame such that, in operation, the motor module portion is configured to move an entirety of the headrest, including the main frame, upwards/downwards or to move only the pad portion diagonally.

Abstract: A substrate treating apparatus to minimize the occurrence of turbulent flow in the edge direction of the substrate and semiconductor manufacturing equipment including the substrate treating apparatus are provided. The substrate treating apparatus includes an upper module including a first supply port providing supercritical fluid to a substrate treating space, a lower module coupled to the upper module and including a second supply port providing the supercritical fluid to the substrate treating space, a shielding plate disposed in the substrate treating space, a plate support coupled to the lower module and supporting the shielding plate, and a first substrate support coupled to the shielding plate and supporting the substrate. A fluid flow path between the lower module and the shielding plate includes a throat structure changing a cross-sectional size of the fluid flow path.