Abstract: Hydroxide-exchange membranes (HEMs) and hydroxide-exchange ionomers (HEIs) are provided which include polymers with oxidation resistant groups. The attachment of the oxidation resistant groups to the polymer backbone allows fine-tuning of the mechanical properties of the membrane and incorporation of alkaline stable cations, such as imidazoliums, phosphoniums and ammoniums, and provides enhanced stability to the polymer. HEMs/HEIs formed from these polymers exhibit superior chemical stability, anion conductivity, decreased water uptake, good solubility in selected solvents, and improved mechanical properties in an ambient dry state as compared to conventional HEM/HEIs. The HEMs exhibit enhanced stability in a highly oxidative environment.

Abstract: A method of extracting myricetin from Xanthoceras sorbifolia Bunge is provided. The method includes: step 1, baking obtaining Xanthoceras sorbifolia Bunge crude powder; step 2, mixing the crude powder with a counter-current extraction solution to perform a counter-current extraction to obtain a filtrate and a filter residue; step 3, mixing the filter residue with a solvent to obtain a first mixture, and heating the first mixture to reflux for extraction to obtain an extraction liquid; step 4, mixing the extraction liquid and the filtrate, and concentrating under reduced pressure to obtain a concentrated solution; and step 5, separating and eluting the concentrated solution to obtain an eluent, then drying the eluent to obtain the myricetin.

Abstract: The disclosure relates to the technical field of extraction of an active ingredient from traditional Chinese medicine, and provides a method of extracting myricetin from Xanthoceras sorbifolia Bunge.

Abstract: A method for the translation between IPv4 and IPv6 is disclosed, including: a BIH link tracker and quick translator are provided in a network core and when a link is established between an IPv4 client and IPv6 server, a standard translator translates and sends to the IPv6 server, a packet sent from the IPv4 client to the IPv6 server, and the BIH link tracker extracts and records information on link and translation of the IPv4 client and IPv6 server from the packet for interaction therebetween; and during a process of sending the packet after establishing the link between the IPv4 client and IPv6 server, the packet is sent to the quick translator which translates and sends the packet according to the information on the translation corresponding to the information on the link recorded by the BIH link tracker. A device for the translation between IPv4 and IPv6 is also disclosed.

Abstract: A method of planarizing a polysilicon gate are provided, comprising: growing a polysilicon gate layer on a substrate with trenches; depositing an oxide layer on the polysilicon gate layer; oxidizing the top portion of the polysilicon gate layer from the flat surface of the oxide layer, so as to form a silicon oxide interlayer in the top portion of the polysilicon gate layer; the bottom of the silicon oxide interlayer is aligned with or lower than the low-lying areas of surface of the polysilicon gate layer; removing the oxide layer and the silicon oxide interlayer, so as to obtain a flat surface of the polysilicon gate layer and avoid a series of problems resulted from the uneven surface in the subsequent processes.

Abstract: A method of forming strained source and drain regions in a P-type FinFET structure is disclose. The method comprises depositing an isolation layer on the FinFET structure; applying a lithography and etching process to expose the isolation layer in two areas on opposite sides of the gate over the source/drain region of the FinFET, and etching through the exposed isolation layer to expose the semiconductive material of the source/drain region in the two areas; forming a recess in each of the source/drain region from the exposed semiconductive material; selectively epitaxially growing another semiconductive material in the recesses to increase the source/drain strain; and removing the rest of the isolation layer.

Abstract: A method of forming strained source and drain regions in a P-type FinFET structure is disclose. The method comprises depositing an isolation layer on the FinFET structure; applying a lithography and etching process to expose the isolation layer in two areas on opposite sides of the gate over the source/drain region of the FinFET, and etching through the exposed isolation layer to expose the semiconductive material of the source/drain region in the two areas; forming a recess in each of the source/drain region from the exposed semiconductive material; selectively epitaxially growing another semiconductive material in the recesses to increase the source/drain strain; and removing the rest of the isolation layer.

Abstract: Disclosed is a heat transfer medium having high heat transfer rate, being useful in even wider fields, simple in structure, easy to made, environmentally sound, and capable of rapidly conducting heat and preserving heat in a highly efficient manner. Further disclosed are a heat transfer surface and a heat transfer element utilizing the heat transfer medium. Further disclosed are applications of the heat transfer element.

Abstract: Disclosed is a heat transfer medium having high heat transfer rate, being useful in even wider fields, simple in structure, easy to made, environmentally sound, and capable of rapidly conducting heat and preserving heat in a highly efficient manner. Further disclosed are a heat transfer surface and a heat transfer element utilizing the heat transfer medium. Further disclosed are applications of the heat transfer element.