Patents by Inventor JunHua Yan

JunHua Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10290890
    Abstract: Poly(aryl piperidinium) polymers are provided which have an alkaline-stable cation, piperidinium, introduced into a rigid aromatic polymer backbone free of ether bonds. Hydroxide exchange membranes or hydroxide exchange ionomers formed from these polymers exhibit superior chemical stability, hydroxide conductivity, decreased water uptake, good solubility in selected solvents, and improved mechanical properties in an ambient dry state as compared to conventional hydroxide exchange membranes or ionomers. Hydroxide exchange membrane fuel cells comprising the poly(aryl piperidinium) polymers exhibit enhanced performance and durability at relatively high temperatures.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: May 14, 2019
    Assignee: Universty of Delaware
    Inventors: Yushan Yan, Bingjun Xu, Junhua Wang, Yun Zhao
  • Publication number: 20170279937
    Abstract: A method for the translation between IPv4 and IPv6 is disclosed, including: a BIH link tracker and quick translator are provided in a network core and when a link is established between an IPv4 client and IPv6 server, a standard translator translates and sends to the IPv6 server, a packet sent from the IPv4 client to the IPv6 server, and the BIH link tracker extracts and records information on link and translation of the IPv4 client and IPv6 server from the packet for interaction therebetween; and during a process of sending the packet after establishing the link between the IPv4 client and IPv6 server, the packet is sent to the quick translator which translates and sends the packet according to the information on the translation corresponding to the information on the link recorded by the BIH link tracker. A device for the translation between IPv4 and IPv6 is also disclosed.
    Type: Application
    Filed: November 18, 2014
    Publication date: September 28, 2017
    Inventors: Sheng Shi, Quan Sun, Junhua Yan
  • Patent number: 9570562
    Abstract: A method of planarizing a polysilicon gate are provided, comprising: growing a polysilicon gate layer on a substrate with trenches; depositing an oxide layer on the polysilicon gate layer; oxidizing the top portion of the polysilicon gate layer from the flat surface of the oxide layer, so as to form a silicon oxide interlayer in the top portion of the polysilicon gate layer; the bottom of the silicon oxide interlayer is aligned with or lower than the low-lying areas of surface of the polysilicon gate layer; removing the oxide layer and the silicon oxide interlayer, so as to obtain a flat surface of the polysilicon gate layer and avoid a series of problems resulted from the uneven surface in the subsequent processes.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: February 14, 2017
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventors: Tong Lei, Junhua Yan
  • Patent number: 8987101
    Abstract: A method of forming strained source and drain regions in a P-type FinFET structure is disclose. The method comprises depositing an isolation layer on the FinFET structure; applying a lithography and etching process to expose the isolation layer in two areas on opposite sides of the gate over the source/drain region of the FinFET, and etching through the exposed isolation layer to expose the semiconductive material of the source/drain region in the two areas; forming a recess in each of the source/drain region from the exposed semiconductive material; selectively epitaxially growing another semiconductive material in the recesses to increase the source/drain strain; and removing the rest of the isolation layer.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: March 24, 2015
    Assignee: Shanghai Huali Microelectronics Corporation
    Inventors: Yi Ding, Minghua Zhang, Jingxun Fang, Junhua Yan
  • Publication number: 20140357041
    Abstract: A method of forming strained source and drain regions in a P-type FinFET structure is disclose. The method comprises depositing an isolation layer on the FinFET structure; applying a lithography and etching process to expose the isolation layer in two areas on opposite sides of the gate over the source/drain region of the FinFET, and etching through the exposed isolation layer to expose the semiconductive material of the source/drain region in the two areas; forming a recess in each of the source/drain region from the exposed semiconductive material; selectively epitaxially growing another semiconductive material in the recesses to increase the source/drain strain; and removing the rest of the isolation layer.
    Type: Application
    Filed: September 30, 2013
    Publication date: December 4, 2014
    Applicant: Shanghai Huali Microelectronics Corporation
    Inventors: Yi Ding, Minghua Zhang, Jingxun Fang, Junhua Yan
  • Patent number: 7220365
    Abstract: Disclosed is a heat transfer medium having high heat transfer rate, being useful in even wider fields, simple in structure, easy to made, environmentally sound, and capable of rapidly conducting heat and preserving heat in a highly efficient manner. Further disclosed are a heat transfer surface and a heat transfer element utilizing the heat transfer medium. Further disclosed are applications of the heat transfer element.
    Type: Grant
    Filed: August 13, 2001
    Date of Patent: May 22, 2007
    Assignee: New Qu Energy Ltd.
    Inventors: YuZhi Qu, ZhiPeng Qu, Jason Chao, YuFu Li, Peng Chen, JunHua Yan, Hong Yuan Yang, Qi Feng Wei
  • Publication number: 20030066638
    Abstract: Disclosed is a heat transfer medium having high heat transfer rate, being useful in even wider fields, simple in structure, easy to made, environmentally sound, and capable of rapidly conducting heat and preserving heat in a highly efficient manner. Further disclosed are a heat transfer surface and a heat transfer element utilizing the heat transfer medium. Further disclosed are applications of the heat transfer element.
    Type: Application
    Filed: August 13, 2001
    Publication date: April 10, 2003
    Inventors: YuZhi Qu, ZhiPeng Qu, Jason Chao, YuFu Li, Peng Chen, JunHua Yan, Hong Yuan Yang, Qi Feng Wei