Abstract: Embodiments of this application disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first dielectric layer and a second dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first dielectric layer is disposed on the second nitride semiconductor layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer includes a first portion and a second portion separated from the first portion by a trench, wherein the trench terminates at an upper surface of the first dielectric layer.

Abstract: Embodiments of this application disclose a semiconductor device and a manufacturing method thereof The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.

Abstract: The present invention provides for a multiple appearance directory number (MADN) group including terminals on both the public switched telephone network (PSTN) and a packet-switched network. The terminals within the MADN group are preferably on the PSTN and a packet-switched network under the control of the PSTN. While call signaling is centralized and provided by the PSTN, a full complement of PSTN services are available to the terminals on the packet-switched network. With centralized call control and access to services from the PSTN, IP terminals on the packet-switched network are treated as if they were PSTN terminals by PSTN elements, and are capable of implementing PSTN features and functions.