Patents by Inventor JunHwan RYU

JunHwan RYU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11932962
    Abstract: A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
    Type: Grant
    Filed: April 5, 2022
    Date of Patent: March 19, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
  • Publication number: 20240068123
    Abstract: Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: JaeWoo Ryu, Carissima Marie Hudson, JunHwan Ji, WooJin Yoon
  • Publication number: 20240068122
    Abstract: Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: JaeWoo Ryu, Carissima Marie Hudson, JunHwan Ji, WooJin Yoon
  • Publication number: 20240068121
    Abstract: Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: JaeWoo Ryu, Carissima Marie Hudson, TaeWon Yuk, JunHwan Ji
  • Publication number: 20130078386
    Abstract: In the present invention, an electric field is created in the DNA solution while DNA is deposited on a polymer surface. A method of electric field assisted deposition of DNA on polymer surface according to an exemplary embodiment of the present invention comprises: forming a polymethylmethacrylate (PMMA) film on a silicon wafer by spin casting; preparing a DNA solution including DNA to be deposited on the PMMA film; and depositing DNA on the PMMA film by creating an electric field in the DNA solution while the silicon wafer on which the PMMA film is formed is submerged in the DNA solution.
    Type: Application
    Filed: October 20, 2011
    Publication date: March 28, 2013
    Applicant: JunHwan RYU
    Inventors: JunHwan RYU, Jonathan Sokolov