Patents by Inventor Jun Hyun Kim

Jun Hyun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12334359
    Abstract: Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
    Type: Grant
    Filed: July 28, 2021
    Date of Patent: June 17, 2025
    Assignee: AJOU UNIVERSITY INDUSTRY—ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Sang-Hyun You
  • Patent number: 12278111
    Abstract: A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: April 15, 2025
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Patent number: 12278093
    Abstract: A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: April 15, 2025
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim
  • Patent number: 12217970
    Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: February 4, 2025
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim
  • Patent number: 12191141
    Abstract: A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: January 7, 2025
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim
  • Patent number: 12134722
    Abstract: Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: November 5, 2024
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Publication number: 20240255500
    Abstract: A diagnostic method that includes providing a plasmonic paper and an absorbing pad positioned under the plasmonic paper, pre-immobilizing an antibody onto the plasmonic paper, introducing a sample solution to the plasmonic paper to extract and concentrate antigen in the sample on the plasmonic paper, absorbing the remainder of the sample solution with the absorbing pad, passing Extrinsic Raman Labels through the plasmonic paper to label captured antigens, and detecting captured antigen.
    Type: Application
    Filed: July 29, 2021
    Publication date: August 1, 2024
    Inventors: Jun-Hyun Kim, Jeremy D. Driskell
  • Publication number: 20240141530
    Abstract: A method for producing a copper composite structure is disclosed. The method for producing a copper composite structure includes a first step of forming a copper pillar structure; and a second step of annealing the copper pillar structure under a nitrogen atmosphere.
    Type: Application
    Filed: March 8, 2022
    Publication date: May 2, 2024
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM, Sanghyun YOU
  • Publication number: 20240006186
    Abstract: Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
    Type: Application
    Filed: July 28, 2021
    Publication date: January 4, 2024
    Applicant: Ajou University Industry-Academic Cooperation Foundation
    Inventors: Chang-Koo KIM, Jun-Hyun KIM, Sang-Hyun YOU
  • Publication number: 20230197466
    Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
    Type: Application
    Filed: March 2, 2021
    Publication date: June 22, 2023
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM
  • Patent number: 11681078
    Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 20, 2023
    Assignee: AJOU UNIVERSITY INDUSTRY—ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim
  • Publication number: 20230178341
    Abstract: A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.
    Type: Application
    Filed: March 2, 2021
    Publication date: June 8, 2023
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM
  • Publication number: 20220363989
    Abstract: Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethly-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
    Type: Application
    Filed: June 1, 2020
    Publication date: November 17, 2022
    Applicant: AJOUUNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM, Jin-Su PARK
  • Publication number: 20220265279
    Abstract: An anchor for an embolic coil, and an embolic coil including the same are provided. The anchor for an embolic coil includes a hollow main body and a central shaft arranged in the hollow main body, wherein the hollow main body is made of a braided composite filament including a polymer filament and a first alloy filament, and the central shaft includes a second alloy filament that is a material different from the first alloy filament.
    Type: Application
    Filed: July 17, 2020
    Publication date: August 25, 2022
    Inventors: Deok Hee LEE, Hong Hee JUNG, Eu Gene LIH, Dae Hyung LEE, Seung Hyun LEE, Ye Ji CHOI, Mi Ri KIM, Yun Sun SONG, Seon Moon HWANG, Joon Ho CHOI, Tae Il KIM, Seng Yong CHUN, Jun Hyun KIM, Jun Young MAENG, Ga Young LEE
  • Publication number: 20220246439
    Abstract: A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
    Type: Application
    Filed: June 1, 2020
    Publication date: August 4, 2022
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC CORPORATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM, Jin-Su PARK
  • Publication number: 20220196879
    Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
    Type: Application
    Filed: March 10, 2022
    Publication date: June 23, 2022
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo KIM, Jun-Hyun KIM
  • Patent number: 11300711
    Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: April 12, 2022
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim
  • Patent number: 11081361
    Abstract: Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: August 3, 2021
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Patent number: 10865343
    Abstract: Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 15, 2020
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Patent number: 10777551
    Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: September 15, 2020
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae Kim, Kwang Il Kim, Jun Hyun Kim, In Sik Jung, Jae Hyung Jang, Jin Yeong Son