Abstract: A display device includes insulating layers, a light-emitting element, and a pixel circuit electrically connected to the light-emitting element. The pixel circuit includes a first transistor. The first transistor includes a metal oxide semiconductor pattern including a source region, a drain region and a channel region disposed between the source region and the drain region, a first gate disposed on the metal oxide semiconductor pattern and overlapping the channel region in a plan view, and a metal oxide pattern disposed on the first gate.

Abstract: A transistor is disclosed that includes an active layer and a gate electrode. The active layer includes a first conductor layer including metal atoms, a layer of semiconductor material disposed above the first conductor layer, and a second conductor layer disposed above the semiconductor material layer and including the metal atoms. The gate electrode overlaps a part of the active layer and is electrically insulated from the active layer.

Abstract: A display device includes a substrate and a first transistor and a second transistor, which are disposed on the substrate. The first transistor includes a first semiconductor layer, a first lower gate electrode disposed on the first semiconductor layer, a first insulating layer disposed on the first lower gate electrode, and a first upper gate electrode disposed on the first insulating layer. The second transistor includes a second lower gate electrode, a second insulating layer disposed on the second lower gate electrode, a second semiconductor layer disposed on the second insulating layer, and a second upper gate electrode disposed on the second semiconductor layer.

Abstract: An adhesive composition for automotive interior materials and a manufacturing method of the automotive interior materials using the adhesive composition include: a first resin composition including biomass-derived carboxylic acid monomers and ethylenediamine monomers, a second resin composition including biomass-derived carboxylic acid monomers and hexamethylenediamine monomers, and a heat-resistant additive.

Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

Abstract: A display device and a manufacturing method of the display device are provided. The display device includes a substrate, a passivation layer disposed on the substrate, a metal oxide layer disposed on the passivation layer, a via layer disposed on the metal oxide layer, a first electrode disposed on the via layer, a pixel defining layer covering the metal oxide layer and an edge portion of the first electrode and dividing a light-emitting area, an organic layer disposed on the first electrode and the pixel defining layer, and a second electrode disposed on the organic layer, wherein a side of the pixel defining layer protrudes more outward than a side of the metal oxide layer, and at least a portion of the organic layer is disconnected at a point between the side of the pixel defining layer and the passivation layer.

Abstract: A display device includes: a substrate; a barrier layer on the substrate, and including: a trench area recessed in a direction towards the substrate; and a flat area surrounding the trench area, and having a flat upper surface; and a switching transistor and a driving transistor on the barrier layer. The switching transistor includes: a first active layer on the barrier layer, at least a portion of the first active layer being located at the trench area, the first active layer including a channel area, and a source area and a drain area at opposite sides of the channel area; a first gate electrode on the first active layer; and a first upper electrode and a second upper electrode on and connected to the first active layer.

Abstract: An electronic apparatus includes a circuit element layer including a scan driver and a pixel driver, and a display element layer including a light emitting element connected to the pixel driver. The circuit element layer includes a first transistor included in the pixel driver, a second transistor included in the scan driver, and an insulating layer disposed between a first oxide semiconductor layer of the first transistor and a first gate of the first transistor. The insulating layer includes a lower oxide layer, an upper oxide layer disposed on the lower oxide layer, and a nitride layer disposed between the lower oxide layer and the upper oxide layer and having a higher hydrogen concentration than the upper oxide layer.

Abstract: An electronic device includes a first transistor disposed on a substrate and including a first semiconductor pattern and a first gate, and a buffer layer. The buffer layer includes a first part overlapping the first semiconductor pattern in a plan view and having a first thickness, and a second part connected to the first part and having a second thickness, the second thickness and the first thickness being different from each other.

Abstract: The present disclosure provides a precursor composition for deposition of a thin film including liquid indium precursor, liquid gallium precursor and liquid zinc precursor, a manufacturing method of the thin film by using the precursor composition, the thin film manufactured by using the precursor composition and an electronic device including the thin film.

Abstract: A pixel circuit includes a light-emitting element connected between a first power line and a second power line, a first driving transistor connected between the first power line and the light-emitting element, and a second driving transistor connected between the first power line and the light-emitting element. An emission current flowing through the light-emitting element is a first driving current flowing through the first driving transistor, a second driving current flowing through the second driving transistor, or a sum of the first driving current and the second driving current.

Abstract: A display device includes multiple insulating layers, a light emitting element, and a pixel circuit electrically connected to the light emitting element. The pixel circuit includes a first transistor that controls a driving current of the light emitting element and a second transistor that outputs a data voltage. A first semiconductor pattern of the first transistor includes a crystalline indium gallium oxide (IGO) semiconductor, and a second semiconductor pattern of the second transistor includes an amorphous indium tin gallium zinc oxide (ITGZO) semiconductor.

Abstract: A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiNx), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiNx) is in a range of about 1:0.6 to about 1:1.5.

Abstract: A display panel includes a light emitting element on a base layer, and a pixel driving circuit electrically connected to the light emitting element. The pixel driving circuit includes a first transistor including a first oxide semiconductor pattern and a second transistor including a second oxide semiconductor pattern. The first oxide semiconductor pattern includes a first channel region including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, and the second oxide semiconductor pattern includes a second channel region including a single-layer oxide semiconductor layer.

Abstract: A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.

Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

Abstract: A display device includes a substrate including a display area and a peripheral area surrounding the display area, a first transistor disposed in the peripheral area of the substrate and including a first active layer having a first channel region and a first gate electrode, a first insulating layer disposed on the first transistor, a first shield pattern disposed on the first insulating layer and to which a direct current voltage is applied, a second insulating layer covering the first shield pattern, and a second transistor directly disposed on the second insulating layer and including a second active layer having a second channel region spaced apart from the first shield pattern in a plan view and a second gate electrode.

Abstract: Provided is a display device including a circuit layer including a first transistor, a second transistor disposed on the first transistor, and a conductive pattern disposed between the first transistor and the second transistor, and a display layer disposed on the circuit layer and including a light emitting element, wherein the first transistor includes a first semiconductor pattern and a first upper electrode, the second transistor includes a second semiconductor pattern, a second upper electrode disposed on the second semiconductor pattern, and a lower electrode disposed below the second semiconductor pattern, the first semiconductor pattern and the second semiconductor pattern overlap, and the conductive pattern at least partially overlaps each of the first semiconductor pattern and the second semiconductor pattern, and accordingly, the display device may exhibit minimized dead space and excellent driving characteristics.

Abstract: A display panel includes a substrate, a light emitting element disposed on the substrate, and a pixel driver connected to the light emitting element. The pixel driver includes a first transistor including a first-first semiconductor pattern, a second-first semiconductor pattern disposed on the first-first semiconductor pattern, and a barrier disposed between the first-first semiconductor pattern and the second-first semiconductor pattern and a second transistor including a first-second semiconductor pattern and a second-second semiconductor pattern disposed on the first-second semiconductor pattern.

Abstract: A display device includes a circuit layer disposed on a base layer and including a buffer layer including a plurality of layers and a plurality of pixel transistors disposed on the buffer layer, and a display layer disposed on the circuit layer and including a light-emitting element. An upper layer forming a top of the plurality of layers included in the buffer layer includes a first portion overlapping a first semiconductor pattern of a first pixel transistor among the plurality of pixel transistors in a plan view, and a second portion overlapping a second semiconductor pattern of a second pixel transistor among the plurality of pixel transistors in a plan view. A first thickness of the first portion and a second thickness of the second portion are different from each other.