Abstract: A collimator having a particle getter function, and a thin-film forming apparatus equipped with the collimator disposed between a target and a wafer. The collimator is fabricated by assembling particle getter sheets into a lattice, honeycomb, or other structure having a number of rows of openings and fixing the assembly into a frame. The particle getter sheets refers collectively to sheets and plates to be assembled integrally to provide a surface having excellent particle capturing and holding actions. Typically, the collimator is a lattice assembly of embossed, slitted particle getter sheets. The film deposited on the collimator is kept from peeling off, without deteriorating the collimator performance.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Abstract: A sputtering target is provided in which a gas component source (material capable of evolving gas) is included in the bottom portion of the target. Predicting and determining the expiration of the useful life of sputtering targets is permitted more precisely and in a simpler way than heretofore described. Moreover over-sputtering is prevented with an improvement in target use efficiency.

Abstract: Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer.

Abstract: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Abstract: In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.