Abstract: Provided is a level shifter including: a first level shifter circuit having first and second transistors whose sources are applied with a power source voltage and drains are connected with gates of the other transistors, and third and fourth transistors whose gates are applied with input and inverted signals, drains are connected with the drains of the first and second transistors, and sources are grounded; and a second level shifter circuit having fifth and sixth transistors whose sources are grounded and drains are connected with gates of the other transistors, and seventh and eighth transistors whose sources are applied with the power source voltage, gates are applied with the input and inverted signals, and drains are connected with the drains of the fifth and sixth transistors, the drains of the first and fifth transistors and the drains of the second and eighth transistors being connected with each other, respectively.

Abstract: The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si—H bonds and siloxanes having Si—H bonds and an oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: To reduce processing time when predetermining a message to be applied to large amounts of process requestors such as several hundred thousand to several million by using an agent corresponding to the message. List information creation means creates list information on applicable process requesters as to an agent start cause event based on process requestor search information. Insertion and reading means selects a plurality of unselected process requestors as the ones to be inserted and read of the process requesters included in the list information, inserts the message into message queues related to the process requesters to be inserted and read and reads agents related to the process requestors to a cache memory, and agent instruction means instructs the agent related to the message queue having the message inserted therein to operate. Repetitive instruction means instructs the insertion and reading means to repeat the process.

Abstract: Provided is a level shifter including: a first level shifter circuit having first and second transistors whose sources are applied with a power source voltage and drains are connected with gates of the other transistors, and third and fourth transistors whose gates are applied with input and inverted signals, drains are connected with the drains of the first and second transistors, and sources are grounded; and a second level shifter circuit having fifth and sixth transistors whose sources are grounded and drains are connected with gates of the other transistors, and seventh and eighth transistors whose sources are applied with the power source voltage, gates are applied with the input and inverted signals, and drains are connected with the drains of the fifth and sixth transistors, the drains of the first and fifth transistors and the drains of the second and eighth transistors being connected with each other, respectively.

Abstract: A level shifter that normally operates with low power consumption at a high operating frequency is provided. The level shifter, including a first level shifter, which has transistors MP3 and MP4, which have a supply voltage VDD applied to respective sources and respective gates connected to the other's drain, and transistors MN3 and MN4, which have signals SIN and SINB applied to respective gates, respective drains connected to the transistors MP3 and MP4 drains, and respective sources grounded; and a second level shifter, which has transistors MN5 and MN6, which have respective sources grounded and respective drains connected to the other's gate, and transistors MP5 and MP6, which have a supply voltage VDD applied to respective sources, signals SIN and SINB applied to respective gates, and respective drains connected to the transistors MP5 and MP6 drains; wherein the drains of the transistors MP3 and MN5 are connected to each other, and the drains of the transistors MP4 and MN6 are connected to each other.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant to cover a wiring. In construction, an insulating film for covering a wiring is formed on the substrate by plasmanizing a film forming gas, that consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O, to react.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract: The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4-n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

Abstract: There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

Abstract: A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.

Abstract: A magnetic reproduction apparatus which uses a magnetic recording medium on which frequency-modulated signals produced by frequency-modulating a carrier with video signals are recorded, and demodulates reproduced signals from the magnetic recording medium into the video signals. The apparatus includes a frequency convertor for causing the reproduced signals to shift to a higher frequency region and a pulse-count-type FM demodulator for demodulating the reproduced signals which have shifted to the higher frequency region into the video signals. This arrangement restrains the mixing of the reproduced signals in the video signals. Therefore the video signals are reproduced with lessened waveform distortion, achieving a high-quality image.

Abstract: A MUSE signal recording/reproducing apparatus for converting a MUSE signal into a digital signal and for recording/reproducing the same, including an HDVTR, a signal processing device, and a control device for controlling the HDVTR and the signal processing device. The HDVTR is a device capable of recording/reproducing effective lines and effective picture elements of a high definition television signal. The signal processing device performs A/D conversion and multiplex processing of two synchronizing MUSE signals to convert the same into frequency double that of a MUSE signal, and further performs rate conversion corresponding to recording frequency and phase of the HDVTR. The HDVTR records the rate-converted data.

Abstract: A control system is proposed that electro-hydraulically develops a servo actuating fluid pressure that momentarily drops to prevent an increase in frictional transmission torque of a friction element which otherwise would be caused by an increase in dynamic frictional coefficient between a driving and a driven member of the friction element as the relative rotation of them decreases toward zero.