Patents by Inventor Junichi Arami

Junichi Arami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200203197
    Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 25, 2020
    Inventors: HUAQIANG TAN, REN ZHOU, ZHUO WANG, DEZAN YANG, GIYOUL KIM, JING LI, JUNICHI ARAMI, ZHONGWU LIU, SI SHEN, BRIAN LU, SEAN CHANG, GREGORY SIU
  • Publication number: 20200176231
    Abstract: A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.
    Type: Application
    Filed: November 29, 2019
    Publication date: June 4, 2020
    Inventors: JUNICHI ARAMI, REN ZHOU
  • Publication number: 20200161166
    Abstract: A plate for supporting wafer has a top for carrying a wafer and a bottom coupled to a pedestal. The plate includes multiple heating units embedded within the plate and at least one set of grooves formed between the top and the bottom of the plate at a radial location between two of neighboring heating units to thereby enhance heat insulation among the heating units.
    Type: Application
    Filed: April 5, 2019
    Publication date: May 21, 2020
    Inventors: Junichi Arami, Ren Zhou
  • Publication number: 20190341280
    Abstract: The present invention discloses a wafer pedestal including a plate, a heating assembly and a heat insulation assembly embedded in the plate at a radial position that divides the plate into a first heating zone and a second heating zone.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 7, 2019
    Inventors: JUNICHI ARAMI, REN ZHOU
  • Publication number: 20190057842
    Abstract: The invention provides an RF signal transmitting device for plasma processing apparatus. The device includes a metal layer embedded in a plate and a metal rod for transmitting RF signal. The metal rod is provided with an upper end and a lower end. The upper end of the metal rod electrically coupled to the metal layer. A magnetic metal contact is sandwiched between the upper end of the metal rod and the metal layer. The material of metal rod is selected from the group of tungsten and chromium.
    Type: Application
    Filed: August 17, 2018
    Publication date: February 21, 2019
    Inventor: JUNICHI ARAMI
  • Patent number: 9653357
    Abstract: A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: May 16, 2017
    Assignee: DISCO CORPORATION
    Inventors: Junichi Arami, Kenji Okazaki
  • Patent number: 9379015
    Abstract: A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the front side of the substrate. The individual devices are formed from the functional layer and are partitioned by the streets. A laser beam is applied along the streets from the front side of the functional layer to thereby remove the functional layer along the streets. A resist film is formed on the front side of the functional layer except on each street. The substrate of the wafer is plasma-etched along each street where the functional layer is absent to the depth corresponding to the finished thickness of each device, thereby forming a division groove along each street and also etching off a modified layer formed on the opposite sides of each street.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: June 28, 2016
    Assignee: DISCO CORPORATION
    Inventors: Sakae Matsuzaki, Junichi Arami
  • Publication number: 20150020973
    Abstract: A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.
    Type: Application
    Filed: July 8, 2014
    Publication date: January 22, 2015
    Inventors: Junichi Arami, Kenji Okazaki
  • Publication number: 20140141596
    Abstract: A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the front side of the substrate. The individual devices are formed from the functional layer and are partitioned by the streets. A laser beam is applied along the streets from the front side of the functional layer to thereby remove the functional layer along the streets. A resist film is formed on the front side of the functional layer except on each street. The substrate of the wafer is plasma-etched along each street where the functional layer is absent to the depth corresponding to the finished thickness of each device, thereby forming a division groove along each street and also etching off a modified layer formed on the opposite sides of each street.
    Type: Application
    Filed: November 1, 2013
    Publication date: May 22, 2014
    Applicant: Disco Corporation
    Inventors: Sakae Matsuzaki, Junichi Arami
  • Publication number: 20130344244
    Abstract: A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device.
    Type: Application
    Filed: March 23, 2012
    Publication date: December 26, 2013
    Applicant: Advanced Micro-Fabrication Equipment Inc.,Shanghai
    Inventors: Zhiyou Du, Junichi Arami, Yijun Sun
  • Publication number: 20100271745
    Abstract: An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.
    Type: Application
    Filed: July 14, 2009
    Publication date: October 28, 2010
    Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA
    Inventors: Jinyuan CHEN, Liang Ouyang, Junichi Arami, Xueyu Qian, Zhiyou Du, Gerald Yin
  • Patent number: 7717061
    Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: May 18, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Naoki Yoshii, Kohei Kawamura, Yukio Fukuda, Takashi Shigeoka, Yasuhiko Kojima, Yasuhiro Oshima, Junichi Arami, Atsushi Gomi
  • Patent number: 7658801
    Abstract: A heating means is disclosed which comprises a reflector plate composed of an opaque quartz and a quartz tube welded to the surface of the reflector plate. A carbon wire which generates heat when a current is applied is inserted in the quartz tube.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: February 9, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Junichi Arami
  • Patent number: 7481902
    Abstract: A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: January 27, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinriki, Junichi Arami
  • Publication number: 20070264427
    Abstract: A method for forming a thin film on a substrate using a showerhead includes forming an atomic layer deposition (ALD) film and a chemical vapor deposition (CVD) film continuously, or forming a thermal ALD film and a plasma ALD film continuously, by using a showerhead including an upper compartment and a lower compartment which is disposed underneath and overlapped by the upper compartment as viewed in an axial direction of the showerhead and is not gas-communicated with the upper compartment.
    Type: Application
    Filed: December 19, 2006
    Publication date: November 15, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi SHINRIKI, Junichi ARAMI
  • Patent number: 7273526
    Abstract: A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: September 25, 2007
    Assignee: ASM Japan K.K.
    Inventors: Hiroshi Shinriki, Junichi Arami
  • Publication number: 20070095289
    Abstract: A heating means is disclosed which comprises a reflector plate composed of an opaque quartz and a quartz tube welded to the surface of the reflector plate. A carbon wire which generates heat when a current is applied is inserted in the quartz tube.
    Type: Application
    Filed: June 22, 2004
    Publication date: May 3, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Junichi Arami
  • Publication number: 20060027167
    Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
    Type: Application
    Filed: September 23, 2005
    Publication date: February 9, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ishizaka, Naoki Yoshii, Kohei Kawamura, Yukio Fukuda, Takashi Shigeoka, Yasuhiko Kojima, Yasuhiro Oshima, Junichi Arami, Atsushi Gomi
  • Publication number: 20050229848
    Abstract: A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.
    Type: Application
    Filed: April 15, 2004
    Publication date: October 20, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Junichi Arami
  • Publication number: 20050074983
    Abstract: A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
    Type: Application
    Filed: September 20, 2004
    Publication date: April 7, 2005
    Inventors: Hiroshi Shinriki, Junichi Arami