Abstract: The present invention relates to a carbonaceous material having a pore volume determined by performing Grand Canonical Monte Carlo simulation on an adsorption-desorption isotherm of carbon dioxide of 0.05 cm3/g or more and 0.20 cm3/g or less, and a ratio of desorption amount to adsorption amount (desorption amount/adsorption amount) at a relative pressure of 0.01 in the adsorption-desorption isotherm of 1.05 or more.

Abstract: An object of the present invention is to provide a carbonaceous material suitable as an electrode material of an electrochemical device which is increased in capacity with not only suppression of an increase in irreversible capacity, but also securement of a high electrode density, as well as a method for producing the carbonaceous material The present invention relates to a carbonaceous material for an electrochemical device, having a specific surface area of 23 m2/g or less as measured according to a BET method and an aerated energy (AE) of 40 mJ or more and 210 mJ or less as measured with a powder rheometer.

Abstract: The present invention relates to a carbonaceous material for an electrochemical device, having an average particle size D50 of 30 ?m or larger as measured by a laser scattering method, and a basic flowability energy BFE of 270 mJ to 1,100 mJ as measured using a powder flowability analyzer equipped with a measuring vessel of 50 mm in diameter and 160 mL in volume under the conditions of a blade tip speed of 100 mm/sec and a powder sample filling capacity of 120 mL and calculated by the following formula: BFE=T/(R tan ?)+F (wherein, R=48 mm, ?=5°, T represents a numerical value of the rotational torque measured by the analyzer, and F represents a numerical value of the normal stress measured by the analyzer).

Abstract: The object of the present invention is to provide a carbonaceous material which is obtainable from plant-derived char and has a decreased specific surface area. Further, the object of the present invention is to provide a non-aqueous electrolyte secondary battery having excellent dedoping capacity, non-dedoping capacity, and charge-discharge efficiency. The object can be solved by a carbonaceous material for non-aqueous electrolyte secondary batteries characterized in that the carbonaceous material is obtained by heat-treating plant-derived char which is demineralized in gas-phase, and carbon precursor or volatile organic compound under a non-oxidizing gas atmosphere; and a specific surface area determined by a BET method is 10 m2/g or less.

Abstract: The object of the present invention is to provide a carbonaceous material which is obtainable from plant-derived char and has a decreased specific surface area. Further, the object of the present invention is to provide a non-aqueous electrolyte secondary battery having excellent dedoping capacity, non-dedoping capacity, and charge-discharge efficiency. The object can be solved by a carbonaceous material for non-aqueous electrolyte secondary batteries characterized in that the carbonaceous material is obtained by heat-treating plant-derived char which is demineralized in gas-phase, and carbon precursor or volatile organic compound under a non-oxidizing gas atmosphere; and a specific surface area determined by a BET method is 10 m2/g or less.

Abstract: The object of the present invention is to provide a manufacturing method of carbonaceous material for a negative electrode of lithium ion capacitors, wherein the carbonaceous material is obtained from plant-derived char as a source, potassium and iron are sufficiently removed, and an average particle diameter thereof is small; and a carbonaceous material for a negative electrode of lithium ion capacitors. The object can be solved by a method for manufacturing a carbonaceous material having an average diameter of 3 to 30 ?m, for a negative electrode of lithium ion capacitors comprising the steps of: (1) heating plant-derived char having an average particle diameter of 100 to 10000 ?m at 500° C. to 1250° C. under an inert gas atmosphere containing a halogen compound to demineralize in a gas-phase, (2) pulverizing a carbon precursor obtained by the demineralization in a gas-phase, (3) calcining the pulverized carbon precursor at less than 1100° C. under a non-oxidizing gas atmosphere.

Abstract: Provided is a manufacturing method of carbonaceous material for a negative electrode of non-aqueous electrolyte secondary batteries, wherein the carbonaceous material is obtained from plant-derived char as a source, potassium is sufficiently removed, and an average particle diameter thereof is small; and a carbonaceous material for a negative electrode of non-aqueous electrolyte secondary batteries. The method for manufacturing a carbonaceous material having an average particle diameter of 3 to 30 ?m, for a negative electrode of non-aqueous electrolyte secondary batteries includes the steps of: (1) heating plant-derived char having an average particle diameter of 100 to 10000 ?m at 500° C. to 1250° C. under an inert gas atmosphere containing halogen compound to demineralize in a gas-phase, (2) pulverizing a carbon precursor obtained by demineralization in a gas-phase, (3) calcining the pulverized carbon precursor at 1000° C. to 1600° C. under an non-oxidizing gas atmosphere.

Abstract: The object of the present invention is to provide a manufacturing method of carbonaceous material for a negative electrode of non-aqueous electrolyte secondary batteries, wherein the carbonaceous material is obtained from plant-derived char as a source, potassium is sufficiently removed, and an average particle diameter thereof is small; and a carbonaceous material for a negative electrode of non-aqueous electrolyte secondary batteries. The object can be solved by a method for manufacturing a carbonaceous material having an average particle diameter of 3 to 30 ?m, for a negative electrode of non-aqueous electrolyte secondary batteries comprising the steps of: (1) heating plant-derived char having an average particle diameter of 100 to 10000 ?m at 500° C. to 1250° C. under an inert gas atmosphere containing halogen compound to demineralize in a gas-phase, (2) pulverizing a carbon precursor obtained by demineralization in a gas-phase, (3) calcining the pulverized carbon precursor at 1000° C. to 1600° C.

Abstract: The object of the present invention is to provide a manufacturing method of carbonaceous material for a negative electrode of lithium ion capacitors, wherein the carbonaceous material is obtained from plant-derived char as a source, potassium and iron are sufficiently removed, and an average particle diameter thereof is small; and a carbonaceous material for a negative electrode of lithium ion capacitors. The object can be solved by a method for manufacturing a carbonaceous material having an average diameter of 3 to 30 ?m, for a negative electrode of lithium ion capacitors comprising the steps of: (1) heating plant-derived char having an average particle diameter of 100 to 10000 ?m at 500° C. to 1250° C. under an inert gas atmosphere containing a halogen compound to demineralize in a gas-phase, (2) pulverizing a carbon precursor obtained by the demineralization in a gas-phase, (3) calcining the pulverized carbon precursor at less than 1100° C. under a non-oxidizing gas atmosphere.

Abstract: The object of the present invention is to provide a carbonaceous material which is obtainable from plant-derived char and has a decreased specific surface area. Further, the object of the present invention is to provide a non-aqueous electrolyte secondary battery having excellent dedoping capacity (discharge capacity), non-dedoping capacity (irreversible capacity), and charge-discharge efficiency. The object can be solved by a carbonaceous material for non-aqueous electrolyte secondary batteries characterized in that the carbonaceous material is obtained by heat-treating plant-derived char which is demineralized in gas-phase, and carbon precursor (i.e. non-graphitizable carbon precursor, graphitizable carbon, or mixture thereof) or volatile organic compound under a non-oxidizing gas atmosphere; and a specific surface area determined by a BET method is 10 m2/g or less.

Abstract: A surface of a first aluminum interconnection layer in a connection hole is exposed to a plasma of oxygen or fluorine-containing gas during the forming step of the connection hole. In order to remove the thin deterioration layer which forms as a result, sputter etching is effected by an argon ion. There are residual particles of the oxide and fluoride of aluminum on the surface of the first aluminum interconnection layer. A titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum layer through the through hole. A titanium compound layer is formed on the titanium layer. A second aluminum layer is formed on the titanium compound layer. A heat treatment is effected to decompose the residual particles and to form an intermetallic compound (TiAl.sub.3).

Abstract: A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through a connection hole. A first aluminum interconnection layer is formed on a main surface of said semiconductor substrate. An insulating layer is formed on the first aluminum interconnection layer and has a through hole extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer.

Abstract: A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Abstract: In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.

Abstract: A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness anad so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Abstract: An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

Abstract: An improved interconnection structure and method for forming the interconnection in a semiconductor device having multilayered interconnection structure in which a contact hole for electrically connecting a first layer interconnection to a predetermined region of a semiconductor substrate and a through hole for electrically connecting a second layer interconnection to the first layer interconnection are formed in the regions overlapping with each other in planer layout. In the interconnection structure of the present invention, hillocks effective to compensate for the contact hole step are formed in the first layer interconnection only in the region of the contact hole of the first layer interconnection.

Abstract: In apparatus for cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior at the chamber (6) in a vacuum of 1 to 10 mTorr., and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.

Abstract: The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c.

Abstract: In a method of cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior of the chamber (6) at a vacuum of 1 to 10 mTorr, and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.