Abstract: A solid-state imaging device includes: a semiconductor substrate on which multiple pixels are provided, each of the pixels having a photoelectric converting section; multiple insulating films stacked on the semiconductor substrate; a wiring film provided between the multiple insulating films; an intralayer lens provided for each photoelectric converting section between the multiple insulating films; an optical filter provided for each photoelectric converting section on the insulating film; and an on-chip lens provided for each photoelectric converting section on the optical filter, wherein at least one intralayer lenses and on-chip lens has a different structure for each pixel in accordance with the characteristic optical filter.

Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.

Abstract: An optical recording/reproducing system 1 reads a recorded signal written to a recording track of a recording medium 3 by light. The light is modulated by a drive signal on which a frequency signal is superimposed. The light is scanned along the recording track at a predetermined scan velocity. The optical recording/reproducing system 1 includes a computer 13 and an LD driver 17 that control, based on the scan velocity, a superimposed magnitude of the frequency signal on the drive signal.

Abstract: A data recording/reproducing system (1) reads a recording signal written on a recording track of a recording medium (3), by using light, which is modulated by a drive signal wherein a frequency signal is superposed for scanning the signal along the recording track at a prescribed scanning speed. Then, the system reproduces the read signal as data. The data recording/reproducing system is provided with a computer (13) for controlling the superposition frequency of the frequency signal for the drive signal corresponding to the scanning speed, and an LD driver (17).

Abstract: A semiconductor laser driving device is mounted on an information recording and reproduction device, and is suitably used for recording and reproducing information. The semiconductor laser driving device includes: a semiconductor laser for emitting a laser light; and a temperature detection unit for detecting a temperature of the semiconductor laser. The semiconductor laser driving device changes the output of the laser light based on the detected temperature. Thus, the semiconductor laser driving unit can suitably improve response characteristics of the semiconductor laser, irrespective of the temperature of the semiconductor laser. Therefore, the semiconductor laser driving device can ensure recording performance onto an optical disc without being affected by the temperature of the semiconductor laser.

Abstract: An optical recording/reproducing system 1 reads, based on a predetermined reproduction clock, information associated with a recording track of a recording medium by irradiating frequency light. The frequency light is scanned at a predetermined scan velocity. The optical recording/reproducing system includes a computer 13, a DSP 49, and a LD driver that modulate light by a drive signal on which a frequency signal is superimposed to thereby output the frequency light, and synchronizes a frequency of the frequency signal with a frequency of the reproduction clock according to the scan velocity.

Abstract: A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.

Abstract: A light beam output control device is provided, which can adequately perform a negative feedback control for different light beams. An optical pickup device 100 calculates an error between a detection voltage, a laser, and a target value of each kind of the detected laser beams. If the calculated error is not in a predetermined range for each kind of the laser beams, the optical pickup device makes each kind of the laser beams correspond to the error, changes a correction amount of the error when a negative feedback control is performed, and corrects the error on the basis of the correction amount corresponding to each kind of the laser beams, thereby performing a negative feedback control.

Abstract: A semiconductor laser driving device is mounted on an information recording/reproducing device or the like, and is suitably used for recording and reproducing information. The semiconductor laser driving device is provided with a semiconductor laser for emitting laser beams, and a temperature detecting means for detecting a temperature of the semiconductor laser, and changes an output of the laser beams based on the detected temperature. Thus, the semiconductor laser driving means can suitably improve response characteristics of the semiconductor laser, irrespective of the temperature of the semiconductor laser. Therefore, the semiconductor laser driving device can ensure recording performance to an optical disc without being affected by the temperature of the semiconductor laser.

Abstract: An aberration correcting apparatus is provided, which is capable of suppressing occurrence of abnormal operation in an actuator for a tracking servo by reducing track cross noise caused by astigmatism in a 45-degree direction in which influence is exerted on the tracking servo. A control is performed by using a CPU 12 and a selector 3 so as to optimize an astigmatism correction amount in a liquid crystal panel in a state where a tracking servo loop is open and in a state where the tracking servo loop is closed.

Abstract: An optical pickup apparatus comprises a semiconductor laser output controller for emitting laser beam, a photodetector for detecting the emitted laser beam, a sampling processor for performing a sampling process, a pulse current generator for generating erase current pulses, write current pulses, and read current pulses, and a controller for controlling the above components. The apparatus performs the sampling process and generates the current pulses according to a predetermined APC timing and controls the semiconductor laser output controller based on the sampling process and current pulses.

Abstract: An electronic structure having wiring, and an associated method of designing the structure, for limiting a temperature gradient in the wiring. The electronic structure includes a substrate having a layer that includes a first and second wire which do not physically touch each other. The first and second wires are adapted to be at an elevated temperature due to Joule heating in relation to electrical current density in the first and second wires. The first wire is electrically and thermally coupled to the second wire by an electrically and thermally conductive structure that exists outside of the layer. The width of the second wire is tailored so as to limit a temperature gradient in the first wire to be below a threshold value that is predetermined to be sufficiently small so as to substantially mitigate adverse effects of electromigration in the first wire.

Abstract: A drive apparatus including: a superposition device which superposes a superposition signal on a drive signal for driving a light beam emission device that emits a light beam and which outputs the drive signal on which the superposition signal is superposed to the light beam emission device, a reference clock signal generation device which generates a reference clock signal, a frequency change device which changes a frequency of the superposition signal based on a quality index for indicating a quality of a reproduction signal that is obtained from a reflection light that is the light beam reflected on a record medium, a phase locked loop device which controls the changed frequency so as to be constant by a feedback method in use of the generated reference clock signal.

Abstract: A content copying device has a mutual authentication section that performs a mutual authentication with a copy source recording medium and a copy destination recording medium respectively and generates a first medium unique key and a second medium unique key, a content key decrypting section that reads an encrypted content key from the copy source recording medium, and decrypts the encrypted content key using information based on the first medium unique key, a content key encrypting section that encrypts the decrypted content key using information based on the second medium unique key and writes the encrypted content key onto the copy destination recording medium, and a content copying section that reads an encrypted content from the copy source recording medium and writes the content onto the copy destination recording medium without performing decryption.

Abstract: A recording device has a content encryption unit for writing a content encrypted with a content key in a recording medium, and a key encryption unit for encrypting the content key and writing the encrypted content key in the recording medium. A content key processing device has a key decryption unit that decrypts the content key that has been encrypted and recorded in a recording medium, and a key encryption unit that re-encrypts the decrypted content key with predetermined information and writes the re-encrypted content key in the recording medium.

Abstract: A solid-state imaging device includes: a semiconductor substrate on which multiple pixels are provided, each of the pixels having a photoelectric converting section; multiple insulating films stacked on the semiconductor substrate; a wiring film provided between the multiple insulating films; an intralayer lens provided for each of the photoelectric converting section between the multiple insulating films; an optical filter provided for each of the photoelectric converting section on the insulating film; and an on-chip lens provided for each of the photoelectric converting section on the optical filter, wherein at least one of the intralayer lenses and on-chip lens has a different structure for each pixel in accordance with the characteristic of the optical filter.

Abstract: A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.

Abstract: A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.

Abstract: An information recording apparatus is provided, which can control over the power of light beams emitted from a light source and various types of servo control with higher accuracy. A laser beam is emitted from a semiconductor laser to write information onto an optical disc. A detection signal indicative of the power of the laser beam output from a light-receiving device is sampled and held with a sample and hold circuit via an I-V converter at a timing delayed by the time corresponding to the delay time of the I-V converter. A tracking error generation circuit and a focus error generation circuit generate a tracking error signal and a focus error signal, respectively, on the basis of a detection signal having information about tracking error and focus error and output from a light-receiving device. Sample and hold circuits sample and hold the tracking error signal and the focus error signal at a timing delayed by the time corresponding to the delay time of each of the generation circuits, respectively.

Abstract: An electronic structure having wiring, and an associated method of designing the structure, for limiting a temperature gradient in the wiring. The electronic structure includes a substrate having a layer that includes a first and second wire which do not physically touch each other. The first and second wires are adapted to be at an elevated temperature due to Joule heating in relation to electrical current density in the first and second wires. The first wire is electrically and thermally coupled to the second wire by an electrically and thermally conductive structure that exists outside of the layer. The width of the second wire is tailored so as to limit a temperature gradient in the first wire to be below a threshold value that is predetermined to be sufficiently small so as to substantially mitigate adverse effects of electromigration in the first wire.