Abstract: Provided is a film forming apparatus in which a thin film can be formed with a good coverage on the inner surface of a hole with high aspect ratio by preventing the negative electric charges from getting concentrated on the substrate edge portion at the time of etching processing. The film forming apparatus is provided with: a vacuum chamber in which a target is disposed; a stage for holding a substrate inside the vacuum chamber; a first electric power for applying predetermined electric power to the target; and a second electric power for applying AC power to the stage. The film forming apparatus performs: film forming processing in which the target is sputtered by applying electric power to the target by the first electric power; and etching processing in which a thin film formed on the substrate is etched by applying AC power to the stage by the second electric power.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.

Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process ? between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process ?, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10?4 [Pa·s].

Abstract: The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target.

Abstract: A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.

Abstract: A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id<Iu, the second magnetic field generation section allowing perpendicular magnetic lines to pass between the target and the body to be processed.

Abstract: The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material 4 from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material.