Abstract: The purpose of the present invention is to provide an organic semiconductor material having liquid crystallinity and high electron mobility. The present invention is an organic semiconductor material having at least a charge-transporting molecular unit (A) having a structure of an aromatic fused ring system and a cyclic structural unit (B) bonded to the aforementioned unit via a single bond, wherein the unit (A) and/or the unit (B) has a side chain composed of a unit (C), and wherein the organic semiconductor material exhibits a liquid crystal phase that is different from an N-phase, an SmA-phase or an SmC-phase.

Abstract: The present invention provides an organic thin film and an organic transistor having high performance stability and mobility. Specifically, there are provided an organic thin film including a compound containing a charge transporting molecular unit A having a structure of an aromatic fused ring system and a unit B serving as a side chain, the compound having a bilayer structure; an organic semiconductor device including the organic thin film; and an organic transistor including the organic thin film used as an organic semiconductor layer.

Abstract: The purpose of the present invention is to provide an organic semiconductor material having liquid crystallinity and high electron mobility. The present invention is an organic semiconductor material having at least a charge-transporting molecular unit (A) having a structure of an aromatic fused ring system and a cyclic structural unit (B) bonded to the aforementioned unit via a single bond, wherein the unit (A) and/or the unit (B) has a side chain composed of a unit (C), and wherein the organic semiconductor material exhibits a liquid crystal phase that is different from an N-phase, an SmA-phase or an SmC-phase.

Abstract: The purpose of the present invention is to provide an organic semiconductor material having liquid crystallinity and high electron mobility. The present invention is an organic semiconductor material having at least a charge-transporting molecular unit (A) having a structure of an aromatic fused ring system and a cyclic structural unit (B) bonded to the aforementioned unit via a single bond, wherein the unit (A) and/or the unit (B) has a side chain composed of a unit (C), and wherein the organic semiconductor material exhibits a liquid crystal phase that is different from an N-phase, an SmA-phase or an SmC-phase.

Abstract: The present invention provides an organic thin film and an organic transistor having high performance stability and mobility. Specifically, there are provided an organic thin film including a compound containing a charge transporting molecular unit A having a structure of an aromatic fused ring system and a unit B serving as a side chain, the compound having a bilayer structure; an organic semiconductor device including the organic thin film; and an organic transistor including the organic thin film used as an organic semiconductor layer.

Abstract: The purpose of the present invention is to provide an organic semiconductor material having liquid crystallinity and high electron mobility. The present invention is an organic semiconductor material having at least a charge-transporting molecular unit (A) having a structure of an aromatic fused ring system and a cyclic structural unit (B) bonded to the aforementioned unit via a single bond, wherein the unit (A) and/or the unit (B) has a side chain composed of a unit (C), and wherein the organic semiconductor material exhibits a liquid crystal phase that is different from an N-phase, an SmA-phase or an SmC-phase.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: An organic semiconductor device Including an organic semiconductor layer in a crystallized crystal state is disclosed. The organic semiconductor layer is formed from an organic semiconductor material including a liquid crystal molecule. The semiconductor material has properties capable of exhibiting a supercooled state during a phase transition process, in which a phase having no periodic regularity is capable of being transferred into a phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules. The phase having no periodic regularity at a location of a center of gravity In between the liquid crystal molecules is a nematic liquid crystal phase and the phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules is a crystal phase.

Abstract: A novel information recording medium is provided which records information upon the application of thermal energy, reads the recorded information by detecting the value of photoelectric current generated by light applied to the information recorded portion, and can realize multi-valued information recording or analog information recording. The information recording medium comprises: a pair of electrodes; and a liquid crystal material filled into a gap between the electrodes, the liquid crystal material having a property such that the charge-transport properties are varied according to the phase transfer between a plurality of stable liquid crystal phases of the liquid crystal and/or the history of the phase transfer.

Abstract: The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.

Abstract: In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.

Abstract: An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

Abstract: There is provided a liquid crystalline organic semiconductor material that can effectively develop electron conductive properties which a liquid crystal system inherently has. The liquid crystalline organic semiconductor material has both an isotropic phase and a smectic liquid crystal phase and comprises an electronically conductive liquid crystal material, wherein the concentration of an impurity in the liquid crystal material is controlled to a lower value than the critical concentration at which the electron conductivity of the liquid crystal material disappears or is significantly reduced rendering ion conduction dominant.

Abstract: The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

Abstract: The main object is to provide a manufacturing method of organic semiconductor, an organic semiconductor device structure manufactured by the manufacturing method and an organic semiconductor device, those having uniform and high carrier transport property over a relatively large area.

Abstract: A manufacturing method of an organic semiconductor device wherein an organic semiconductor layer being, a structural component of an organic semiconductor device is formed continuously with uniform performance over a sufficiently large area.

Abstract: The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

Abstract: The main object is to provide a manufacturing method of organic semiconductor, an organic semiconductor device structure manufactured by the manufacturing method and an organic semiconductor device, those having uniform and high carrier transport property over a relatively large area.