Abstract: An electronic component cleaning method for performing cleaning on a surface of a wafer includes: a wet cleaning process of performing wet cleaning on the surface of the wafer by hydrogen water and pure water; a dry cleaning process of performing dry cleaning on the surface of an electronic component by atmospheric-pressure plasma after the wet cleaning; and a hydrogen water treatment process of performing cleaning on the surface of the wafer using hydrogen water obtained by dissolving hydrogen gas into water, after the dry cleaning process.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: A method for producing cleaning water for an electronic material, includes obtaining oxygen gas and argon gas from air with a PSA oxygen concentration apparatus, dissolving the oxygen gas and argon gas obtained from the PSA oxygen concentration apparatus in pure water or ultrapure water. A concentration of dissolved oxygen is in a range of 8 to 50 mg/L, and a content of dissolved argon gas is in a range of 2 to 50 volume % of a total amount of dissolved oxygen gas and the dissolved argon gas.

Abstract: Cleaning water for an electronic material which exhibits a remarkably improved cleaning effect in comparison with conventional waters containing dissolved gas is provided. The cleaning water for an electronic material comprises water containing dissolved gas containing oxygen and argon as dissolved gases, and has a concentration of dissolved oxygen being equal to or more than 8 mg/L, and a content of dissolved argon gas being equal to or more than 2 volume % of the total amount of dissolved oxygen gas and dissolved argon gas. A method for cleaning an electronic material with the cleaning water for an electronic material. The cleaning water for an electronic material of the present invention, which comprises water containing dissolved oxygen/argon gas, contains a smaller amount of dissolved gas, can obtain an improved cleaning effect even when a small amount of a chemical is used, and therefore, can be produced safely and easily at a low cost.

Abstract: There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.

Abstract: An apparatus for supplying water containing dissolved gas comprising a flowmeter for measuring a flowrate of pure or ultra-pure water and a mechanism for controlling a flowrate, a means for adjusting an amount of water which adjusts an amount of the pure or ultra-pure water supplied to the apparatus for dissolving a gas, a tank which receives the water containing dissolved gas in an excessive amount which is not used at a point of use, a piping system through which the water containing dissolved gas glows from the tank towards the point of use and the water containing dissolved gas in an excessive amount returns to the tank, a piping system for supplying the water containing dissolved gas to the tank, and a controlling means for adjusting an amount of water based on a water level in the tank.

Abstract: An apparatus for supplying water containing dissolved gas comprising a flowmeter for measuring a flowrate of pure or ultra-pure water and a mechanism for controlling a flowrate, a means for adjusting an amount of water which adjusts an amount of the pure or ultra-pure water supplied to the apparatus for dissolving a gas, a tank which receives the water containing dissolved gas in an excessive amount which is not used at a point of use, a piping system through which the water containing dissolved gas glows from the tank towards the point of use and the water containing dissolved gas in an excessive amount returns to the tank, a piping system for supplying the water containing dissolved gas to the tank, and a controlling means for adjusting an amount of water based on a water level in the tank.

Abstract: An apparatus for continuous dissolution comprising a dissolution portion for dissolving a gas into a main stream liquid, which comprises a flow meter measuring the flow rate of the main stream liquid and outputting a signal of the value obtained by the measurement and a mechanism for controlling the flow rate which controls the amount of supply of the gas based on the input signal; and a process for continuously dissolving a gas into the main stream liquid, wherein the amount of the gas is controlled based on the flow rate of the main stream liquid. Since a solution having a constant concentration can be obtained with stability even when the flow rate of the main stream liquid changes, cleaning water or surface treatment water used for electronic materials which particularly require a precisely clean surface can be supplied without loss.

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: A simple cleaning method which can remove metal, organic and fine particle contaminants on the surface of electronic components, and especially those on silicon bases, and also suppress an increase in the roughness of base surface on the order of atoms during cleaning processes, is provided by cleaning with an oxidizing cleaning fluid, followed by cleaning with a reducing cleaning fluid with the application of ultrasonic vibrations.

Abstract: An ozonated ultrapure water supply system that prevents reduction of the dissolved ozone concentration in the supply pipe system and maintains the dissolved ozone at points of use along the supply system at desired concentrations. This permits the system to supply ozonated water in long pipes. The system includes a sequential arrangement of a circulatory main pipe 3 for supplying ultrapure water, an ozonated gas supplying device 4, and at least two output branch lines 8 each having a gas/liquid separation device 9 and an ultimate point of use 7. The output branch lines are spaced downstream from the ozonated gas supplying device such that the ozone concentration in the ultrapure water has increased to a stable level and the ozonated ultrapure water at each output branch line is at this same stable ozone concentration.

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: A cleaning solution for electromaterials including hydrogen fluoride and either oxygen or hydrogen gas dissolved in water. The cleaning solution may alternatively include hydrogen fluoride, hydrochloric acid or nitric acid, and hydrogen or oxygen gas dissolved in water. Alternatively, the cleaning solution includes hydrogen fluoride, hydrogen peroxide and oxygen gas dissolved in water. The present invention also provides a method for cleaning electromaterials including applying an ultrasonic vibration to cleaning solution applied to electromaterials.

Abstract: There are here disclosed carbon fibers for reinforcement of cement which are obtained by applying, onto the surfaces of carbon fibers, esters of oleic acid and aliphatic monovalent alcohols, esters of oleyl alcohol and monovalent fatty acids, polyoxyalkylene bisphenol ethers or polyether esters as sizing agents, and a cement composite material having a bending strength of 300 kgf/cm.sup.2 or more which contains cut carbon fibers having a fiber length of 10 to 50 mm at a mixing volume ratio of the cut carbon fibers to the cement matrix in the range of 1 to 5%. According to the present invention, there are provided the carbon fibers for reinforcement of cement which have excellent adhesive properties to the cement, good process passage properties through a direct spray gun and good bundling properties and which are suitable for a direct spray method, and the cement composite material using the carbon fibers and having high bending strength.

Abstract: A discharge-type surge absorbing element that absorbs a surge by using the discharge that occurs between a discharge interval arranged within a sealed container filled with a discharge gas. The discharge-type absorbing element is characterized by a plurality of discharge electrodes connected to lead wires and disposed within a sealed container filled with a discharge gas. The discharge electrodes are disposed within the container so that they face each other and so that a discharge gap is formed between the discharge electrodes. The lead wire from each of the discharge electrodes passes through the sealed container and extends externally. A layer is disposed on the inside surface of the sealed container, at least between the lead wires. The layer has good creeping discharge properties and is made from the material in the discharge electrodes. A very small gap is formed between the lead wires and the end of the layer.

Abstract: There are here disclosed carbon fibers for reinforcement of cement which are obtained by applying, onto the surfaces of carbon fibers, esters of oleic acid and aliphatic monovalent alcohols, esters of oleyl alcohol and monovalent fatty acids, polyoxyalkylene bisphenol ethers or polyether esters as sizing agents, and a cement composite material having a bending strength of 300 kgf/cm.sup.2 or more which contains cut carbon fibers having a fiber length of 10 to 50 mm at a mixing volume ratio of the cut carbon fibers to the cement matrix in the range of 1 to 5%. According to the present invention, there are provided the carbon fibers for reinforcement of cement which have excellent adhesive properties to the cement, good process passage properties through a direct spray gun and good bundling properties and which are suitable for a direct spray method, and the cement composite material using the carbon fibers and having high bending strength.

Abstract: Carbon fiber rovings for reinforcement of concrete are here disclosed which are obtained by sizing, with a sizing agent, strands each consisting of 100 to 1,000 monofilaments of mesophase pitch-based carbon fibers, and then bundling the thus sized 5 to 100 strands into one roving.

Abstract: A first display discharge lamp has a transparent airtight container filled with a discharge gas; a positive electrode disposed in the airtight container and supported by a stem having an air tube therein; a negative electrode of an inverted configuration disposed in the transparent airtight container and surrounded by the positive electrode; a lead member integrally formed with the positive electrode, having a bent portion between a lower end of the negative electrode and the stem; and an insulating member disposed between the lower end of the negative electrode and the bent portion of the lead member. According to a second display discharge lamp, both a negative electrode and a positive electrode are of an inverted conical configuration. The former has at least an open upper end, while the latter has an open upper end and an open lower end. A lower end of the positive electrode is inserted in an interior of the negative electrode from the open upper end of the negative electrode.

Abstract: A method of removing endotoxin from a solution containing only endotoxin as a absorbed material, wherein the pH value of the solution is adjusted to pH 9 or lower than it, and subsequently, the solution is passed through a column packed with a crosslinked granular chitosan.